薄膜层

The refractive index of metal effects mainly resonance depth and the half peak breadth. There is an optimum metal thickness with the largest resonance depth and the smallest reflection coefficient. The refractive index and thickness of dielectric layer and recording layer impact resonance angle and the half peak breadth.

金属薄膜的折射率是影响共振半峰宽度和共振深度的主要因素，计算表明存在一个最佳的金属层厚度，使得共振深度最大，反射系数最小；介质层和记录层的折射率和厚度的变化均会影响共振角的大小和共振峰半峰宽的变化。

The surface morphology of the nacreous layer on different parts of Pteria Penguin and blister pearl from Sanya, Hainan Province, are observed directly by using environmental scanning electron microscope.

研究结果表明，该地区海水成因的珍珠层中有机质薄膜对珍珠层的螺旋生长成核和结晶取向起到了严格的调控作用，它为文石或方解石晶体的生长提供一个有效的定位或成核中心；有机质与文石微晶在时间和空间上的螺旋交互生长具有周期性，从而产生珍珠层表面的这种结构形态。

In order to provide a photo detector in which the generation of spontaneous noise is suppressed and external noise is effectively reduced, a p-type diffusion layer is provided on the obverse side of an n-type semiconductor substrate, a p-type low-resistance layer is provided on the obverse side of the p-type diffusion layer, a lead frame is provided on the reverse side of the n-type semiconductor substrate with an insulative resin film in between, and the p-type low-resistance layer is electrically connected to the lead frame.

为了提供能够抑制自发噪声的产生并有效地减少外部噪声的光检测器，在n型半导体衬底正面设置p型扩散层，在p型扩散层正面设置p型低电阻层，在n型半导体衬底的反面设置引线框架、中间夹有绝缘树脂薄膜，p型低电阻层电连接到引线框架。

When the buffer layer of the transferred LED film was eliminated, the tensile stress in GaN layer was shown to increase. However, the compressive stress in InGaN well layer was kept unvaried.

去除转移后LED薄膜中过渡层后，GaN层受到的张应力变大，而铟镓氮层受到的压应力基本不变。

During the upper and lower letoff twolevel film-cards and membership cards make surface adhesion to the back of another layer, so that the business card printing and membership card making surface of ink is transferred to another level.

不主给表示在播卷的上下两层薄膜间制卡和会员卡制息背粘附于另一层的背后，使制卡和会员卡制息背的油不朱迁徙到另一层背后。

Based on the previous research on the deposition of amorphous/microcrystalline silicon tandem solar cells, silane concentration for the deposition of microcrystalline bottom cell was selected to further optimize the performance for micromorph tandem solar cells using very high frequency technique. Finally, micromorph silicon tandem solar cell with 11.02%(Area=1.0cm2) initial conversion efficiency has been fabricated at a certain silane concentration and suitable light trapping structure.

采用甚高频等离子体增强化学气相沉积技术，在前期我们单室沉积的微晶硅薄膜太阳电池和非晶硅/微晶硅叠层太阳电池研究的基础上，通过对微晶硅底电池本征层硅烷浓度的优化，获得了初始效率达到11.02%（电池面积1.0cm2）的非晶硅/微晶硅叠层太阳电池。

The structure of the implanted zone and unimplanted zone was observed by X-ray photoelectron spectroscopy and high voltage electron microscopy.

结果表明：复合渗镀＋PVD法沉积的TiN薄膜呈较为均匀、致密、细小的组织，Ti和N原子由表层呈梯度向内分布。与PVD法沉积的TiN层不同，是属于冶金扩散结合层，渗镀层厚度可达10μm以上。

The sugar composition of the membrane was carried out by hydrolyzing 5 mg of the membrane in sealed ampules by either 2 M HCl or trifluoroacetic acid at 100 °C for 5, 10, and 15 hr and then the dried hydrolysate was analyzed by thin layer chromatography as well as high performance liquid chromatography.

将此薄膜取5 mg分别加入2 M盐酸或三氟醋酸置入安培瓶并熔封，於100 ℃下作用5、10、15小时将醣类水解，再将水解之产物以薄层液相色层分析法与高效能液相色层分析仪分析。

A Dense scale on the2O3(Cr/Y=4/1) coated specimen;2O3(Al/Y=3.6/1) coated specimen; Oxide nodules formed at the corner on the specimen coated with2O3(Cr/Y=2/1) deposited for 15 s; Locally spalled scale on the same specimen as in; The trace of cracks in the deposited oxide film on the scale formed on the specimen coated with2O3 (Cr/Y=2/1) deposited for 60 s; Showing the similar trace on the same specimen as in b

沉积复合OTFC试样的氧化层形貌有如下特征：(1)氧化层绝大部分致密、完整、与基体附着良好，晶粒细小（图7a，7b）；(2)在短时间(15s)沉积2O3 OTFC试样的局部表面出现了不均匀氧化（图7c，7d），但只是在沉积Cr/Y=4/1膜试样的局部表面产生了类似无涂层Fe25Cr上剥落的厚膜（图7d）；(3)沉积2O3(Cr/Y=2/1) 60s（图7e）与15s（图7c）的结果不同，前者整个试样表面氧化产物颗粒细小，无粗大氧化物颗粒形成；(4)沉积2O3(Cr/Y=2/1) 60s和2O3(Al/Y=3.6/1)薄膜的试样由于氧化增重非常少，氧化层很薄，刻印着涂层中局部出现的裂纹（图7e，7f），这种印迹的保留可能反映着传质机制的改变，即新氧化物由在外表面形成转变为在外表面以下形成。

The SBT thin films with STO seeded layer on MFIS structure also appear prefer (115),(006) orientation and good crystallinity. The seeded layer of STO effectively resists the diffusion of Bi into Ir bottom electrode on MIM structure. The remanent polarization and leakage current density of Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layers are significantly improved. In MFIS structure, the Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layer are improved memory window and lead to lower leakage current at low voltage.

在具有STO晶种层基材上沉积之钽酸锶铋铁电薄膜於700℃淬火后，无论在MIM和MFIS结构上皆可得完美(115)方向之SBT结晶相，而STO的种晶层在MIM结构中确实可以有效的阻止铋原子扩散进入底电极，而降低漏电流，在MFIS结构中虽然得到一较小极化值，但由於铁电层所分配到的电场值反而因介电常数值降低而增加，因而得到较大的记忆窗。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。