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The device is fabricated by nonsilicon surface micro-machining, which uses the photoresist and the sputtered copper thin films as the scarificial layers, and the electroplated ferronickel as the structure layer to fabricate the optical MEMS components. The device consists of an electroplated ferronickel optical shutter interposed in a gap between two fiber alignment componets, an electroplated planar coil, a silicon spring, and two fiber alignment components with V-shaped grooves.

该衰减器利用非硅表面微加工工艺(这种工艺采用光致抗蚀剂和溅射铜薄膜作为牺牲层,电镀铁镍层作为结构层来制作MEMS元件)制作,由电镀铁镍层构成的一个插在两对准光纤空隙中的挡光片,一个平面电感线圈,一个硅弹簧和二个带有V型槽的光纤对准元件构成。

It was found that the resistivity of the TiO2, thin films deposited on Ti and Ti substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on different substarte materials is different and the films deposited on glass are nonconductors.

结果表明,沈积在Ti和Si基底上的TiO2薄膜的电阻率随著膜厚的增加而非线性增大,分别经历了导体、半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程, TiO2薄膜导电层厚度也不相同,沈积在玻璃表面TiO2薄膜为绝缘体。

In this thesis, the method of nanoindentation experiment is adopted to conduct research on silicon dioxide thin f.

本文采用纳米压入实验的方法,分别对集成电路工艺中常用的二氧化硅薄膜、氮化硅薄膜和铜互连布线中常用的Cu/Ta/SiO_2/Si结构的多层薄膜进行了研究。

By means of zone melting recrystallization method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer.

经区熔再结晶后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。

The AlTiN multilayer and AlCN monolayer hard coatings were studied by high-resolution transmission electron microscopy on microstructure.

采用高分辨透射电镜技术对两种硬质薄膜(AlTiN多层薄膜和AlCN非晶薄膜)样品的显微结构进行了研究。

Keywords TiO_2film;ZrO_2 buffer layer;reactive electron beam evaporation;film thickness;film structure

TiO_2薄膜; ZrO_2过渡层;电子束蒸发;薄膜厚度;薄膜结构

Therefor, those films can be used as hard-coating thin films to expand lifetimes of mechanical compound such as cutting tools and dies. For decorative purpers, TiN and ZrN are also employed in some case. In electronic industry, those films are used as diffusion barrier layers between Cu and Si.

这类薄膜既可作为一种耐磨及硬质薄膜而广泛用于各种切削工具、机械零部件,也可作为各种装饰薄膜应用于装饰行业,还可作为Cu 和Si 之间的扩散阻挡层。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性,开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺,利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计,在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型,器件初步具备了室温红外热成像的能力。

The results show that the film growth conditions strongly affect the mechanical properties of the Ti-O layers on top of the TiN-covered Ti substrates.For example,the TiN/Ti-O composite films display excelle...

结果表明,在钛合金表面制备TiN薄膜后,逐渐降低N2流量至0 sccm,沉积一层Ti膜,再用逐渐通入O2制备Ti-O薄膜的工艺制备的TiN/Ti-N/Ti/Ti-O薄膜具有较好的力学性能。

Produce light oil film spray conditions normally finish normally does not produce a spray, such as user surface in cigarette packages are often in a layer on the surface of another polyolefin film, humidity and temperature in particular to certain conditions, when oil coating, the surface oil often very short gasficatic cause light fastness oil attachthemselves badnessand and above on the surface of polyolefin film appears with uniform small steam fog, in which case the contrary result in reducing or andgrainy of the goods.

产生光油薄膜雾化条件正常情况下,上光油一般不会产生雾化,例如用户在香烟盒表面往往在表面再覆一层聚烯烃薄膜后,湿度大、特别是气温高到一定条件时,当底油涂布后,面油往往因极短暂的气雾致使光油附着牢度不好,而覆在上光油表面的聚烯烃薄膜就会出现浓浓的均匀的雾状小蒸汽,这时反而降低或导致商品的肉质的变化。

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