薄膜层

The developed algorithm in this paper is not only applied to theoptimization of multilayer antireflection coatings,but also the automaticdesign of filter and beam splitter with complex coating system.

本文构造的多层光学薄膜遗传算法不但能够设计多层增透薄膜和复杂的分光镜，而且还可优化设计滤光片。

This is the ultimate limit of such a solid. It's just one layer," Jaeger said."What is interesting is that already one layer is so resilient and has these interesting properties.

这是此类固体的终极极限，它仅仅是一层薄膜，"林晓敏说："令人感兴趣的是，一层薄膜已经具备很强的弹性和一些有趣的属性。

The energy consumption of processing the polytetrafluoroethylene film by the said device is lower than the traditional processing device.

利用本发明所述的设备加工聚四氟乙烯薄膜的能耗低于传统的加工设备，并可加工多层聚四氟乙烯薄膜，层间粘结好，不容易分层，适用面广，生产效率高。

The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i.e., 1.73eV above the conduction band edge.

2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。

The growth mechanism of silver seed on silicon has been presented: at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.

提出了银晶籽在硅表面的生长机理是：首先是在硅表面没有被完全覆盖的情况下，单层银晶籽生长的同时伴随有多层的生长，此后单层逐渐形成连续的薄膜，在单层晶籽层上多层薄膜逐渐增厚，并伴随有部分银原子向硅中的扩散。

And then to study the both structures' emission characteristic.It was found that the Al-AlN could emit electrons. The two different structures' emission efficiency has prodigious distinction. The first one whose electron emitter film is on the top was much easier to engender the straitens gaps. And it could engender the straitens gaps at larger area than the other one.

经过实验我们发现(1)对于发射层位于电极之上的结构观测到可测量的发射电流(2)当电子发射层位于电极之上，一排电子发射单元的总电阻介于20~150Ω之间时，电形成过程中，给电极间加脉冲电压，在第一个脉冲周期中就能把Al-AlN电子发射薄膜烧断；而对于电子发射层位于电极之下的结构，在电形成过程中，则需要几个脉冲周期之后才能将电子发射薄膜烧断。

However , Each ferromagnetic layer (VEH=100V、120V and 150V) exhibits a columnar structure perpendicular to the film surface and the film thickness of ferromagnetic and antiferromagnetic was about 20nm and 30 nm , respectively .

然而，在VEH=100V、120V and 150V条件下的Ni80Fe20/NixFe1-xO双层薄膜的铁磁层中，一种垂直於薄膜表面的柱状结构被观察到，且铁磁层和反铁磁层的厚度分别约为20 nm和30 nm。

In this paper we focus our attention to CoCr thin films. Investigation is carried out on both magnetic properties of the CoCr、FeNi、Ti thin films and the multilayers consisted of CoCr、FeNi and Ti thin films.

本文选择垂直磁化CoCr合金薄膜作为重点研究对象，用单极磁头、双层介质的组合，对CoCr薄膜、FeNi薄膜、Ti薄膜及由CoCr、FeNi、Ti膜组成的多层膜结构和磁性能进了仔细研究。

At present, the company has completed the film with nano-level and engineering level of the development of nylon and successfully applied to the functional film and the field of urban water supply, developed a multi-layer barrier packaging films, stretch film, high-strength heat shrinkable barrier film series, as well as nano-meter nylon, plastic beer bottles series, films and nylon meter has formed the scale of industrialization.

目前，公司已完成膜用级和工程级纳米尼龙的开发，成功应用到功能性包装薄膜及城市供水领域，开发了多层阻隔包装薄膜、拉伸膜、高强度高阻隔热收缩薄膜系列以及纳米尼龙水表、塑料啤酒瓶系列，薄膜及尼龙水表已形成产业化规模。

In this study, we used poly L-latcide, poly DL-latcide-co-glycolide 75:25 (PLGA7525) and poly DL-latcide-co-glycolide 50:50 (PLGA5050) during citric acid inducing ammonium bicarbonate gas forming process to form porous polymer film, and rolled the porous polymer film to make nerve conduits with pores and multi-layered. Electron Spectroscopy for Chemical Analyzer and Attenuated Total Reflectance – Fourier-Transform Infrared Spectrometer were employed for determining elements' functionabilities and chemical compounds. Charge Coupled Device camera and Scanning Electron Microscope were employed for macroscopic and microscopic morphologies and structural observation. Differential Scanning Calorimetry was employed for measuring glass-transition temperature. Nano-indentation system was employed for measuring elastic modulus and hardness. Biodegradation and water absorption ratios were measured to analyze their chemical properties and SEM was employed for microscopic morphology of the tested nerve conduit.

本研究将以聚乳酸、聚乳酸-聚甘醇酸共聚合物（75：25）、聚乳酸-聚甘醇酸共聚合物（50：50）做为研究材料，以柠檬酸诱发碳酸氢铵发泡之气泡成型法制作具有相连通孔隙之高分子薄膜，再将高分子薄膜卷制成特殊多层的导管，制作具有多层孔隙之新型神经再生导管，以电子能谱化学分析及减弱式全反射-傅立叶转换红外线光谱分析进行成份分析及化学元素测定；以电荷耦合元件摄影机、扫瞄式电子显微镜进行多层孔隙型神经导管巨观及微观形态结构观察；以示差扫瞄热量量测分析玻璃转换温度、奈米三维量测弹性模数及硬度；以及进行降解性质测定，并以扫瞄式电子显微镜进行降解后之导管微观结构形态观察。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。