薄膜层

As a result, if the iridescence is produced by thin-film interference, not only the thickness of lamellar structure must be defined within a certain nanometer, but also the refractive index need to be different between lamellar structure. In other words, the chemical composition, refractive index and thickness of exsolution lamellae need form to trinity, such as labradorite, albite, andradite and orthoamphibole. If the iridescent color is produced by grating-diffraction, the lamellar structure just needs to be arrayed regularly, the spacing of the edges of lamellar structure needs to be regular and narrow, but not necessarily within the range of the wavelength of visible light, such as shell of abalone, pearl and opal.

薄膜干涉式晕彩不仅要求宝石内部结构层的厚度必须在一定的纳米范围内，而且结构层内部的折射率也必须有所差别，也即，当结构层由两相组分出溶而成，其化学成分、折射率和结构层厚度形成三位一体时，符合薄膜干涉式晕彩，如拉长石、钠长石、石榴石和角闪石；而光栅式衍射晕彩则仅要求结构层排列规则，边缘狭窄但不需要窄到可见光波长范围内，能使入射光的振幅或位相，或两者同时产生周期性空间调制的结构即可，如鲍贝壳、珍珠和欧泊。

The process includes dry etching the protecting layer of AMR film; wet etching the permalloy layer of the AMR film; and dry etching the transition layer of the AMR film.

一种多层膜的干湿结合蚀刻方法，包括：干法刻蚀各向异性磁电阻效应薄膜的保护层；湿法腐蚀各向异性磁电阻效应薄膜的坡莫合金层；干法刻蚀各向异性磁电阻效应薄膜的过渡层。

The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.

研究表明：氮化钛和N 薄膜为多晶态，氮流量决定了氮化钛薄膜的结构和性能，增加氮流量能使氮化钛薄膜的结构向面心立方结构转变，从而得到性能良好的氮化钛薄膜；施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷，使膜层变得更致密，从而提高薄膜硬度；氮化钛主要遵循自由载流子光吸收，氮含量较少时薄膜中的自由电子数目较多，随着氮含量的增加，薄膜中的自由电子数目不断减少，反射率逐渐降低，等离子体频率向低能端移动，从而使薄膜颜色出现规律变化，由金属色银白色到淡黄、金黄再到红黄，并且薄膜亮度呈下降趋势；金黄色的N 薄膜中存在TiN 和ZrN 的分离相，但其为单一的面心立方结构并具有(111)面择优取向；相对于TiN 薄膜，Zr 掺杂后，并没有使薄膜的导带、价带和禁带发生变化，只是在TiN 禁带内增加了新能级，这也正是掺杂Zr 后，薄膜仍

The result indicated that the AlTiN multilayer coating deposited on high speed steel substrates with alternated nitrogen contents in layers. In each layer, AlTiN exhibited nanocomposites of nanocrystallites embedded into amorphous matrices despite of the nitrogen content. The difference between bilayers was that AlTiN layer with lower nitrogen content had a lower density of nanocrystallites. The AlCN coating deposited on Si (100) substrate appeared a strained layer on substrate in the ilm-substrate interface, which thickness was 3～5 atom layer.

结果表明：在高速钢基体上制备的AlTiN多层薄膜由两种氮含量交替变化的膜层构成，尽管交替的两层中氮含量不同，但每一单层都为纳米晶包含在非晶点阵中的纳米复合结构，不同之处是低氮含量层中纳米晶密度较小；生长在单晶硅基体(100)晶面上的非晶AlCN薄膜，在膜基界面处硅基体上出现应力畸变层，应力畸变层厚度很薄，约3～5个原子层。

According to the simulated results, it was found that the incident light was not fully absorbed in the solar cell due to a thinner base layer. The un-absorbed incident light could be further reflected by a AuGe/Au mirror layer and absorbed again by the base layer. Thus the disadvantage of the GaAs thin-film cell with a thinner base layer could be solved by the additional reflection from the AuGe/Au mirror with a high reflectivity within 800~1000 nm wavelength. Moreover, the external quantum efficiency in the long wavelength region and short current density were also increased.

从模拟结果中得知，薄膜型结构之太阳电池可以经由AuGe/Au之金属反射层，再次将未被基极层完全吸收之入射光反射回太阳电池，使得薄膜型结构在长波段的外部量子效率获得提升，这结果显示薄膜型结构太阳电池可利用AuGe/Au之金属反射层在长波段的高反射率，改善使用较薄基极层时，无法将入射光完全吸收的缺点。

The first layer is phosphosilicate glass and the second layer is silicon nitride. Now the passivation layer can isolate the device circuits from external contamination damage.

在护层的薄膜中，经常使用双层薄膜(Multi-Layer)的结构，第一层薄膜沈积磷矽玻璃，第二层薄膜则沈积氮化矽，即可将元件线路结构与外界污染物隔离。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

For thinner films, stacking faults are preferred in the scratch process, which increase storage capacity of plastic deformation in the film, and further inhibit the stick slip amplitude in the friction oscillation process. For thicker films, dislocation loops, which glide along slip plane downward to the grain boundary, dominate over the stacking faults, and finally dissipate on the grain boundaries. Since the intergrain stacking faults are inactive in thicker films, the stick slip phenomenon is similar to that in single crystal.

摩擦过程中易在较薄的薄膜表面和薄膜晶界之间产生穿晶层错，穿晶层错的产生增加了薄膜蓄积塑性变形的能力，从而抑制材料表面摩擦力在黏滑过程中的振荡幅度；在比较厚的薄膜中不易生成穿晶层错，在摩擦过程中位错环依次向体材料发射，并与晶界反应，湮灭于晶界，黏滑动摩擦响应与单晶相似。

Polymer-based thin film transistors with poly(3-hexylthiophene)(P3HT) as semiconducting active layers were successfully fabricated on silicon substrates in air which was used as gate electrode, HfTiO film deposited by RF sputtering method was used as gate insulators, and gold metal was used as source and drain electrodes. The HfTiO surface was modified by using octadecyltrichlorosilane solution during fabrication process.

以高掺杂Si单晶片作为衬底且充当栅电极，采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层，聚三己基噻吩(P3HT)薄膜作为半导体活性层，金属Au作为源、漏电极，并采用十八烷基三氯硅烷对栅介质层表面修饰，在空气环境下成功地制备出聚合物薄膜晶体管。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。