薄膜层

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Similarly, the AMR begin to increase and then decrease with increasing the thickness d of the seed layer, and has a maximum value at a critical thickness d of 5.32nm. Compared to the permalloy films deposited on Ta seed layer ,the AMR enhancement of 10%-46% is observed in the permallay films deposited on (Ni0.82Fe0.18)1-xNbx seed layer.(2) The coercivity Hc1 obtained for magnetic field H applied paralley to the easyaxis is large than Hc2 for H applied perpendicular to the in-plane easy axis, and both of coercivity are consistent with the change of x.

2沿样品易轴方向的矫顽力Hc_1比难轴方向的矫顽力Hc_2大，两者随Nb原子的百分含量x的变化是一致的，饱和磁化强度Ms随x的增大先增大后减小，在x=27.1％处，Hc_1和Hc_2都比较小，而Ms则达到最大；种子层厚度d不能明显改变坡莫合金薄膜的磁性能；与以传统材料Ta为种子层的坡莫合金薄膜相比，以Ni_(0.82Fe_(0.18)_(0.829)Nb_(0.271)为种子层的坡莫合金薄膜的矫顽力只有轻微减小，但是Msg 以w讪Fq.t）lkNk为种于层的坡莫合全薄膜的各向异性戳电阻及磁性能研究却要大，mk坡莫合金层厂度！

Low temperature ordering of FePt thin films has been achieved by using a thin equiatomic AuCu underlayer.

提出并利用相干生长的多层膜中有序－无序转变过程的彼此关联作用，借助AuCu缓冲层的低温有序化，降低FePt薄膜的有序转变温度200℃以上，为FePt薄膜的低温有序化开劈了一条新途径；制备多层膜，退火形成有序相FePt纳米颗粒分散在Ag基体的复合结构，比FePt/Ag共溅射或合金多层膜方法的退火温度明显降低；通过缓冲层Ta控制FePt的粗糙度和晶界密度，同时界面附近Ta、Pt发生化学反应，两者共同促进薄膜内Pt原子的有效迁移，从而加速FePt有序化；进一步，在Ta和FePt之间插入Bi薄层，强化Ta、Pt的扩散，在更低温度下形成高矫顽力的有序化FePt薄膜且FePt晶粒之间交换作用大大减弱；发现MgO薄膜作底层，可控制与MgO晶粒尺寸大致相当的临界厚度以下的FePt有序化薄膜的（001）取向，同时，MgO和FePt的相对厚度显著影响（001）取向FePt的有序化。

Design the structure of high performance Low-E film including its material and thickness of every layer according to basic optical theory. Carry out an innovative work to calculate its optical performance by characteristic matrices and optical admittance. Compare the results with those we get by traditional measurement.3. Prepare Low-E films with RF magnetron controlled reactive sputtering. The result shows that in the visible region (380nm-780nm), the highest transmittance is 82.4% while the average value is 75%. In the NIR region (780nm-2500nm), the average transmittance is 16.2%. These characters can fit the demand of the glass used in architecture and cars, and also in other applications.4. We novelly use the material Titanium as protective layer to solve the problem that Ag layer would disappear when depositing the second TiO_2 layer. As the protective layer, Ti does not increase the number of targets so as to lower the costs. The thickness of the protective layer Titanium is adjusted by controlling of sputtering time. Results shows the Low-E films get the best optical character when the sputtering time of Titanium is 20 seconds5. We novelly proposed a new transmittance quality factor Q=_·(?_-__ to evaluate the performances of Low-E films, which makes it easier to judge the qualities of Low-E film.6. The photocatalysis of Titanium dioxides is researched and introduced into Low-E films. Sb-doped TiO_2 thin films are prepared. Its photocatalysis and hydrophilicity are measured.

论文的工作主要有：1、总结了低辐射薄膜的制备方法，性能，以及国内外最新研究进展和应用，并对两种类型的低辐射薄膜进行了比较。2、从光学基本理论开始，设计了离线低辐射薄膜的结构，包括每一层的材料和厚度，并创新性的用特性矩阵和光学导纳理论计算了该离线膜的光学性能，利用软件对其进行了仿真，与实际制备的薄膜所测量的性能相比较。3、完成在实验室仪器上制备低辐射薄膜，掌握其工艺条件，解决了超薄金属膜的制备问题，所制备的低辐射薄膜在可见光区(380hm-780hm)最高可达82.4%，平均透射率为75%；在近红外区(780nm-2500nm)的平均透射率为16.2%，其性能达到建筑物幕墙玻璃，汽车前挡玻璃等应用标准，并为进一步的大规模生产打下基础。4、针对中间银层在镀上层膜时易被氧化这一工艺难题，本研究创新性的提出用Ti膜作为保护膜，没有增加新的靶材，提高了生产效率，并节约了生产成本。

An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.

一种改进且新颖的磁性元件(10；10'；50；50'；80)，它含有许多薄膜层，其中单元端部静磁退磁场将抵消这种结构的全部正耦合以在零外磁场下获得双磁态。

Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.

另外还公开了一种通过提供多个薄膜层来构成一种磁性元件(10)的方法，其中单元端部静磁退磁场将抵消这种结构的全部正耦合以在零外磁场下获得双磁态。

Unlike traditional honeycombs which are produced with adhesive systems, the PlastiCell process uses laser welding to join the Aptiv film layers within the honeycomb matrix.

传统的蜂窝芯材使用胶黏剂系统，而PlastiCell工艺使用激光焊接，在蜂窝基内连结APTIV薄膜层。

Crystallization of organic thin films is one of the main degradation mechanisms of organic light emitting diodes.

有机薄膜层的结晶是有机电致发光器件衰减的主要机理之一。

To present an adhesive sheet roll for wafer processing excellent in storage stability, radiation curing property, and low contamination to wafer.

一种保存稳定性、放射线固化性以及对晶圆的低污染性优异的筒状晶圆加工用粘合片，是将由基材薄膜、放射线固化性粘合剂层、以及脱模薄膜按顺序层叠而成的层叠薄膜，多重缠绕而形成的筒状晶圆加工用粘合片，所述基材薄膜和/或脱模薄膜的与放射线固化性粘合剂层接触的面的另外面侧表面的轮廓算术平均偏差为1μm以上，且所述放射线固化性粘合剂层中所含的自由基聚合抑制剂的重量低于1000ppm。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。