薄膜层

Some people mistake this membrane for rice paper, but it is actually made from the inner tube of a bamboo or reed plant.

有人曾误以为这些薄膜是糯米纸，但实际上这种薄膜取自竹管或芦苇管的里层。

Some people mistak e this membrane for rice paper, but it is actually made from the inner tube of a bamboo or reed plant.

有人曾误以为这些薄膜是糯米纸，但实际上这种薄膜取自竹管或芦苇管的里层。

ZnO thin films were deposited on TiO2 buffer layers by electron beam evaporation. The effect of annealing temperature on crystalline quality and photoluminescence of the films was studied.

采用电子束蒸发技术在TiO2缓冲层上沉积了ZnO薄膜，研究了不同的退火温度对薄膜晶化质量及发光性质的影响。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

Anodised films on aluminum components for micro hardness measurements require sufficient film thickness to ensure that the hardness indentations can be consistently made near the center of the thickness without cracking of the film.

铝件的阳极氧化层微观硬度测量要求有足够的薄膜厚度以保证在薄膜不破裂的情况下可以得到一致的硬度缺口。

The key to make bi-epitaxial film is to control the epitaxial growth of multi-layer different materials.

制备双外延薄膜的关键是要实现薄膜的多层异质外延生长。

The relation between growth mode and atomic shift was established and the octahedra vibration was discussed in detail.

利用原子力显微镜，高分辨透射电镜等研究了这几种薄膜的生长模式、薄膜中的沿着c轴的原子层错和局域的氧八面体的无规扭曲以及它们之间的关系。

As above mentioned, it could be improved the optics characterization of films efficiently by textured aluminium doped zinc oxide films by wet etching. Using solar cells as transparent electrode enables the light passed through solar cells and reduceds reflectance to permeate into absorb layer of solar cells and improve conversion efficiencies of solar cells.

由上述的光学性质变化中可得知，经由湿式蚀刻过程后的氧化锌掺铝薄膜确实能有效改善薄膜的光学特性，对於应用於太阳电池中当透明电极使用时，能使更多入射光通过元件表面而进入吸收层内，帮助提升太阳电池的转换效率。

By low temperature (145K) deposition method, we prepared such flat Pb films on the Si (111) substrate over a wide thickness range (from 10ML to 32ML). The unique growth behaviors were investigated by RHEED, STM and ARPES. A critical thickness of 10ML is established, at which the atomically flat Pb films become stable at room temperature. Between 10ML and 20ML, the growth exhibits a quasi bi-layer growth mode. Above 21ML, a layer-by-layer growth mode was observed.

采用低温生长的方法（衬底温度145K），通过对生长条件的优化，我们在Si（111）衬底上制备出了具有原子级平整度的Pb 薄膜，用STM 和ARPES确定了其特殊的生长模式：室温下成膜的临界厚度是10ML，随后是一种双层生长模式，覆盖度高于21ML 时，薄膜生长基本上是层状生长的模式。

Compared with known theories, it can be regarded as an important progress, because all the known theories only consider the impedance boundary conditions for single-layered film, and it is very difficult to generalize them to the case of multilayered films.

这是对原有的阻抗边界条件理论的一个值得重视的发展。原有的理论仅仅考虑到单层压电薄膜的阻抗边界条件，而且在三维条件下并不可能直接地推广到多层薄膜的情况。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。