薄膜地

The results show that with corona discharge and copolymerization time, the grafting degree of AAM onto BOPP film increases.

结果表明，电火花能有效地引发AAM在BOPP薄膜表面的接枝聚合反应，随着电火花处理时间和接枝反应时间的延长，AAM在BOPP薄膜表面的接枝率增大。

MgO thin films were successfully prepared on Si substrate by a novel and simple Sol-Gel method. The results indicated that collodion is a key element to form stable MgO sols. The structures of MgO films are closely related to the amount of collodion and the annealing temperature.

摘 要 以硝酸镁为起始原料，胶棉液为添加剂，在Si(100)衬底上成功地制备MgO薄膜，结果表明，胶棉液是形成MgO溶胶的关键组份；薄膜的晶体结构与胶棉液的含量及退火温度有关。

In this paper, the fabrication process of electrodeposit CoFe2 and micro-structure and magnetic properties of CoFe2O4 thin films which were prepared by electrodeposit oxygenation were systematically studied from experimental aspect,Comparing with micro-structure and magnetic properties of CoFe2O4 thin films which were prepared by RF magnetron sputtering.

本论文系统地研究了电化学沉积CoFe2工艺以及采用电化学沉积氧化法制备的CoFe2O4/Cu/Si(100)薄膜的微观结构和磁性能并与射频磁控溅射制备的CoFe2O4/Cu/Si(100)薄膜的微观结构及磁性能进行了比较。

Hydrogenated amorphous silicon nitride films have been deposited by helicon wave plasma enhanced chemical vapor deposition, the effect of SiH4/N2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a-SiNx:H films with different compositions are deposited.

本工作采用螺旋波等离子体化学气相沉积方法制备了氢化非晶氮化硅薄膜，系统地研究了不同反应气体配比对薄膜特性的影响，得到了沉积不同组分a-SiN_x：H的典型实验条件。

It is found that the energy distributing model using Knoop indenter can effectively separate the intrinsic hardness of the thin film from the measured composite hardness.

认为采用努氏压头的能量分配模型可以有效地将薄膜硬度从膜基复合硬度中分离，从而得到薄膜的本征硬度。

In the example, in the upper side layer of the pixel electrode 7a, an interelectrode insulating film 8, a common electrode 9a in which slit-like openings 9b are formed, and an alignment layer 16 are sequentially formed.

地，覆盖作为像素开关元件的薄膜晶体管30地形成层间绝缘膜6，并通过该层间绝缘膜6的接触孔6a及漏电极5b，使像素电极7a电连接于薄膜晶体管30的漏区域1d。

Ion beam enhanced deposition has become an established technique for the preparation of thin films to effectively...

离子束增强沉积作为一种独特的薄膜沉积技术由于能有效地控制和改善薄膜的微结构、成分、硬度等等正日益引起人们的兴趣。

Ion beam enhanced deposition has become an established technique for the preparation of thin films to effectively control their microstructure, composition and hardness.

离子束增强沉积作为一种独特的薄膜沉积技术由于能有效地控制和改善薄膜的微结构、成分、硬度等等正日益引起人们的兴趣。

Using this technique, fluorine atoms can be introduced into poly-Si films to passivate trap states, and hence the performance of SPC poly-Si TFTs can be significantly improved.

利用此技术，氟原子可以有效地被导入复晶矽薄膜中以消除薄膜中的载子补获态，进而有效地提升元件特性。

Polymer-based thin film transistors with poly(3-hexylthiophene)(P3HT) as semiconducting active layers were successfully fabricated on silicon substrates in air which was used as gate electrode, HfTiO film deposited by RF sputtering method was used as gate insulators, and gold metal was used as source and drain electrodes. The HfTiO surface was modified by using octadecyltrichlorosilane solution during fabrication process.

以高掺杂Si单晶片作为衬底且充当栅电极，采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层，聚三己基噻吩(P3HT)薄膜作为半导体活性层，金属Au作为源、漏电极，并采用十八烷基三氯硅烷对栅介质层表面修饰，在空气环境下成功地制备出聚合物薄膜晶体管。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。