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It will lead to the increase of leakage current and the deterioration of electrical property.

如果我们能够通过适当的表面处理使存在于SiCOH薄膜表面的孔闭合,就有可能有效地降低Cu向薄膜内部的扩散,从而改善多孔SiCOH薄膜的电学性能。

ABSTRACT The aim of the project is to prepare the high temperature superconducting thin films which can satisfy the need of future applications in the field of power transmission. By using biaxially textured Ni (001) and Ag (110) as substrates, the YBCO films with high critical current were obtained under the optimized deposition conditions. Some results were obtained as follows: We developed a simple approach to prepare YBCO films doped with Ag nanograins.

本工作的研究目的是在金属基带上制备出能够满足未来超导强电应用的超导薄膜小样品,其具体的做法是在双轴织构的Ni(001)和Ag(110)基带上外延YBCO高温超导薄膜,经过不断地优化工艺条件,我们得到如下结果:发展了一种在YBCO薄膜中掺入Ag颗粒的方法,这种方法具有可以随时改变掺杂量的特点。

The results in this paper are concluded as follows:(1) Rolling contact fatigue has been used to examine the interfacial reaction products and study the mechanism of ion beam intermixing effect on the adhesion of Cr-N coating on steel by IBAD.

对多次冲击条件下薄膜的失效抗力及其与薄膜力学性能之间的关系进行了初步探讨,得到如下结果:(1)用滚动接触疲劳法检测离子轰击导致的界面反应产物和研究离子束共混对钢基体上IBAD沉积Cr-N薄膜结合强度的影响本质,结果表明,滚动接触疲劳能有效地分析界面最薄弱位置和评估界面反应产物,滚动接触疲劳引起的剥落可作为研究界面反应产物对结合强度影响的根据。

With this EBT model, we successfully predicts how to optimize post annealing conditions and get the giant magnetooptic Ce-substituted YIG thin films for waveguide applications.

对Ce1YIG薄膜的溅射工艺及后续的晶化处理工艺进行了研究,得到了如下主要结论:成功地在非晶态的二氧化硅基片上用溅射法制备了非晶的Ce1YIG薄膜,并进行了后续晶化处理,得到了晶化的Ce1YIG薄膜。

In this dissertation,Co-Cr2O3 and Fe-Cr2O3 granular films with superiorproperties have been successfully fabricated by RF co-sputtering technique underroom and 77K substrate temperatures for the first time.The microstructure,electrical transport and magnetic properties as well as their relation to TMR effectare systematically investigated by various techniques such as X-Ray diffraction,transmission electron microscopy,electrical diffraction,X-Rayphotoelectron spectroscopyand VSM,etc.,the change of electrical transportand magnetic properties in these films with their microstructure is also shown.Someinteresting and valuable results have been obtained after the theoretical fitting ofexperimental data with the existed theory.The temperature dependence of TMReffects in these films and the way to get larger TMR effect is also studied.Our mainprincipal results obtained are as follows:(1)Microstructure and Magnetism

在本论文中,我们采用射频共溅射方法,在室温及77K的衬底温度下首次成功地制备了性能优异的Co-Cr2O3及Fe-Cr2O3系列颗粒薄膜,并利用X-Ray衍射、透射电镜、电子衍射、X-Ray光电子谱及宏观电性及磁性测量等手段详细地研究了Co-Cr2O3颗粒膜的微结构、电性、磁性及它们与TMR效应之间的关系,系统地研究了薄膜的电性和磁性随薄膜微结构的变化,通过实验数据点的理论拟合,得出了一些有价值的物理信息,探讨了磁电阻效应的温度依赖性及获得较大TMR效应的途径,主要内容可概括如下

Preparation and microstructure GAMs were successfully embedded in SiO〓 thin film by magnetron r. f. cosputtering technique. The microstructure of thin films were characterized by XRD and TEM.

一、薄膜的制备和显微结构采用射频磁控共溅射法成功地制备了GaAs颗粒均匀地弥散在SiO〓介质中的薄膜,薄膜中GaAs颗粒所占的体积分数高达15%以上,GaAs颗粒的平均直径为纳米量级。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性,开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺,利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计,在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型,器件初步具备了室温红外热成像的能力。

The ferroelectric, dielectric, and optical properties of these thin films were studied. Moreover, a four-phase model was successfully employed in analyzing the optical parameters.

研究了部分组分薄膜的铁电、介电和光学性质,提出了四相模型拟合薄膜结构,并成功地用此模型分析了薄膜的光学参数。

The result of research indicates the In-doped mol proportion of 4% improves the structure of thin films effectively so as to increase its ultraviolet-visible light transmissivity remarkably; the Sb doping of 7% comes into being more free electrons to make its sheet resistance reduced; the P doping of 2% further enhances its conductance by reason of the forming of quasi-continuous doping energy band.

研究表明,4%的铟掺杂有效地改善了薄膜的内部结构,使得紫外-可见光的透过率显著增加;7%的锑掺杂释放出了更多的载流子,使薄膜的方块电阻降低,2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率。

By means of magnetically controlled reaction and sputtering process, metal tin is oxidized, and tin oxide film in nano level is formed on silicon chip and further oxidized and annealed to form the nano crystal particle tin oxide film. The nano crystal particle tin oxide film has the features of great specific surface area, homogeneous thickness, high surface smoothness, high sensitivity, high stability and others.

本发明采用磁控反应溅射方法使金属锡氧化,在硅片上生成锡的纳米量级氧化物薄膜,再进一步氧化、退火,即可制造出纳米晶粒氧化锡薄膜,该氧化锡纳米敏感薄膜具有氧化锡颗粒度小,比表面积大,厚度均匀等特点,且表面平整度高,在100倍显微镜下观察没有裂痕,有利于提高气敏传感器的灵敏度和稳定性,通过溅射时间严格地控制膜厚,可重复性高,适合于批量生产。

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