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We observed the changes in the orientation, grain size and roughness of the bismuth films as a function of the substrate temperature.

我们发现薄膜的方向、晶粒的大小、表面粗糙度都会随基板温度而改变。

The experimental result that the best membrane is polyethylene which the thickness is better than another and has bleeder vent.

实验结果表明,厚度最高且带有一定透气孔的聚乙烯薄膜最好。

If fluorescence shows up as a blotch , smear ,smudge, or film ,reclean the fluorescing area.

如果荧光性显示为一个斑点,油迹,烟迹,或者薄膜,就再清洁一遍荧光区。

First is the revival of the riverfront with a series of raised "lilypad" eating platforms and "bluebell" membrane canopies to animate the water's edge.

首先是关于河岸边的再生改造。水面升起的一个个形似"莲花座"的餐饮平台,其上薄膜材质的遮蔽如"风信子"般从天而降,这样的处理使得整个水岸区域重现勃勃生机。

La 0.67 Ca 0.33 MnO 3 epitaxial thin films were used as the photosensitive element of the bolometer, and the optical response of this device to the He\|Ne laser and the blackbody were measured.

用外延法生长的La0 。67Ca0 。3 3 MnO3薄膜作为测辐射热仪的辐射敏感元件,测量了该器件对黑体和He Ne激光器的光学响应。

The results of theoretical analysis and experiments indicate that in the frequency band of 10 to 3 000 MHz and voltage range of 0.1 to 2 V,the uncertainty is 0.25% to 0.7% and the confidence level is 99.73%. Metrology ; Voltage standard ; Bolovac ; Thin film bolometric bridge with resistance regulation network circuit ; Double thin film bolometer ; RF mount ; Uncertainty evaluation

在近期的技术改造[2]中,我们研制出电阻臂可变的自动平衡电桥,重新研制了双薄膜测热电阻,建立了射频电压自动校准系统,从而使该基准的计量性能有了很大提高,其主要技术指标如下:测量范围为0·1~2·0V;频率范围为10~3 000MHz;不确定度为0·25%~0·7%(k=3);工作方式为自动测试。2工作原理和构成2.1工作原理射频电压基准是建立在功率替代原理的基础

Uncooled infrared detector ; bolometer ; pyroelectric ; standard CMOS process ; thin film transistor

室温红外探测器;测辐射热计;热释电;标准CMOS工艺;薄膜晶体管

Thermochromic properties of vanadium dioxide thin films are applied to solar energy materials, photoeletric switch and bolometer materials for the uncooled microbolometers due to their high temperature coefficient of resistance at room temperature.

中文摘要具热致变特性之VO2薄膜因在室温附近有明显的相转变现象,同时发生光电性质的急遽的转变,且在室温之下有较高的电阻温度系数,所以在一系列氧化钒化合物中格外被受瞩目;VO2因这些性质而被广泛应用於太阳能控制材料、电学开关、光学开关及非冷却型辐射热感测器等半导体元件之中。

Based on the Boltzmann equation,taking the silicon film as example,the temperature effects on the heat capacity of carrier and lattice,thermal conductivity,relaxation time have been studied with the finite difference method.

基于Boltzmann方程,采用了Chen J K等人建立的自相关模型,考虑了Si薄膜的热容、热导率、弛豫时间等热力学参量随温度非线性变化的影响。

In this work, a study of non-Fourier energy transport in silicon nanoscale thin films during femtosecond laser heating is carried out based on the Boltzmann transport equation.

论文以Boltzmann输运方程为理论基础开展了飞秒激光辐照下硅纳米薄膜中的超快能量输运过程研究。

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