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Moreover, in order to solve this issue of NILC poly-Si film, we develop an effective gettering method to reduce the Ni-metal impurity contamination of the NILC poly-Si films.

此外,为了解决对於镍金属诱发复晶矽薄膜来说,非常重要的镍金属残留问题,因而发展出有效的吸气方法来降低镍金属诱发复晶矽薄膜中的镍金属残留。

The basis mechanism and main process flow of metal induced crystallization poly-Si (MIC poly-Si) dynamic gettering are discussed, and its applications are studied for use in poly-Si thin film transistor devices.

首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程,然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用。

Second, an α-Si-coated wafers used as Ni-gettering substrates then bonding the gettering substrate and NILC poly-Si film together.

第二,利用镀覆非晶矽薄膜之吸气基板与镍金属诱发结晶之复晶矽薄膜接合并进行退火。

The TiN/Si〓N〓 coatings were composed of TiN nanocrystallites with grain size of no more than 5 nm and amorphous Si〓N〓 phase.

本文首先使用离子束辅助沉积方法制备TiN薄膜和TiN/Si〓N〓纳米复合薄膜

This paper introduces not only deposition of tin oxide thin film, but also doping silica oxide in the film to control the grain size of tin oxide, and improve the sensitivity of the sensor.

论文中除了沈积二氧化锡薄膜外,亦於薄膜内掺杂二氧化矽,藉此以抑制二氧化锡晶粒成长、提升其灵敏度。

Thin film of tellurium was prepared by chemical vapour deposition on the polyethylene foils using room-temperature decomposition of electrochemically generated hydrogen telluride.

用化学气相沉积法制备碲薄膜,其步骤为:通过电化学方法制得碲化氢,碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜

Thin film of tellurium was prepared by chemical vapour deposition on the polyethylene foils using room-temperature decomposition of electrochemically generated hydrogen telluride.

摘 要:用化学气相沉积法制备碲薄膜,其步骤为:通过电化学方法制得碲化氢,碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜

This is the ultimate limit of such a solid. It's just one layer," Jaeger said."What is interesting is that already one layer is so resilient and has these interesting properties.

这是此类固体的终极极限,它仅仅是一层薄膜,&林晓敏说:&令人感兴趣的是,一层薄膜已经具备很强的弹性和一些有趣的属性。

However, the poly-Si TFTs suffered poor uniformity with large variations on the device characteristics due to the narrow laser process window for producing large-grained poly-Si TFTs.

然而,由於使用狭小雷射制程窗口来产生大颗粒的复晶矽薄膜电晶体,这会使得复晶矽薄膜电晶体因为巨大的元件特性变化而具有较差的一致性。

However, the poly-Si TFTs suffered poor uniformity with large variations on the device characteristics due to the narrow laser process window for producing large-grained poly-Si TFTs.

然而,在量产线上仍无法精确控制复晶矽薄膜电晶体之晶粒大小与晶粒边界的一致性,这会使得复晶矽薄膜电晶体因为元件特性变化而具有较差的一致性。

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