薄膜

The anatase crystals of the TiO2 films connected together to form netlike structure after calcined, and th

在自制的光催化反应装置中以10mg/L甲基橙为降解对象，考察了TiO2薄膜的光催化性能，在4h内直接干燥的TiO2薄膜脱色率达到95%，经热处理后薄膜的光催化性能有一定提高，这说明采用AS溶胶前驱体制备的TiO2薄膜光催化性能良好。

The first layer is phosphosilicate glass and the second layer is silicon nitride. Now the passivation layer can isolate the device circuits from external contamination damage.

在护层的薄膜中，经常使用双层薄膜(Multi-Layer)的结构，第一层薄膜沈积磷矽玻璃，第二层薄膜则沈积氮化矽，即可将元件线路结构与外界污染物隔离。

At present, film photocatalytic is studied mostly for treating with water pollution. Because the film will not bring the secondary pollution, and can be used again. ZnO film and TiO_2 film is mostly used as photocatalyzer, but they have some disadvantage, as they can only absorb little of the sun-light energy, the photoluminescence exciton compounds mostly, and they can be eroded easily by light. Complex semiconductor film is a good method to ravel out these problems.

目前，在光催化治理水污染方面，膜的光催化是一个研究的热点，因为膜催化不存在二次污染且便于回收和重复利用，研究较多的是ZnO薄膜和TiO_2薄膜，但是单一组分的薄膜存在光能利用率低，光激子复合率高，易发生光腐蚀等缺点，复合膜是解决该问题的有效途径，我们提出了全新的复合薄膜的制备方法—混合溶胶法。

The electrical resistivity as low as 1.7×10-4Ω·cm was obtained, and the average total visible light transmittance of the IMO film with the glass substrate was over 80%. Plasmatic wavelength method, van der Pauw method and optical spectra fitting method were applied to measure and compare the carrier concentrations of IMO and ITO.

采用等离子振荡波长法、van-der-Pauw法和光谱拟合法等三种方法对IMO薄膜和ITO薄膜的载流子浓度进行了测量和比较，结果表明IMO薄膜的载流子浓度还不到ITO薄膜的三分之一。

Based on the pyrocondensation model and principles of elasticity, the layer structure design of thin films was proposed in view of the control of residual thermal stress and the corresponding evaluation function was applied to the layer structure design of films.

基于热收缩效应模型和弹性力学原理，从薄膜膜系着手提出了控制薄膜残余热应力的膜系设计原则，将该原则的评价函数用于薄膜膜系设计中，采用优化方法可以设计出残余热应力可接受的薄膜。

In the deep processing of agricultural and food products, there are some key technological problems of system design on the domestic traditional reelable vacuum aluminium coating system, including mass process parameters, bad process duplication, unstable production quality caused by complex operation, and high equipment failure rate. A newly developed reelable vacuum aluminium coating system with 1500 mm-wide thin plastic films was designed with high vacuum technology in order to satisfy the vacuum aluminum coating of more than 1500 mm-wide, such as polyethylene terephthalate, oriented polypropylene, polypropylene cast film, polyvinyl chloride.

为满足农产品及食品深加工中1500 mm幅宽以上的聚脂薄膜、定向聚丙烯薄膜、聚丙烯流涎薄膜、聚乙烯薄膜的真空镀铝，针对国内卷绕蒸发式真空镀膜机设备存在的工艺参数多、工艺重复性差、操作复杂、产品质量不稳定、设备故障率高等问题，采用高真空技术研制了宽幅卷绕蒸发式高真空镀膜机。

EDS and Surface-profile results indicate that the stoichiometries of all the samples approach 2:3 and the thicknesses are over 500nm. XRD results indicate that the major diffraction peaks of the film match those of Bi2Te3.The film growth exhibits preferred orientation at (015) phase and many Bi, impurity peaks are observed. Hall and Seebeck coefficient measurement reveals that all the samples are n-type with the carrier density of 10^23cm^-3 and conductivity of 10^-5Sm^-1 which confirm the samples have nice thermoelectrically properties.

能谱分析和台阶仪测量结果显示本文所制备的薄膜Bi：Te原子比接近2：3，厚度都大于500nm；XRD测量结果显示薄膜的主要衍射峰与Bi2Te3标准衍射峰相同，在（015）晶面上择优选向明显，有少量的Bi、杂质峰存在；霍尔系数测试及Seebeck系数测量结果显示，薄膜都为n型半导体薄膜，载流子浓度量级为10^23cm^-3，电导率量级10^-5Sm^-1，具有良好的电学性能。

The results show that the capacitance of RuO2·nH2O films unannealed is unstable. Annealing at temperatures of 100, 150, 200, 250 and 300℃for 2 h respectively, the capacitance of RuO2·nH2O becomes stable after 60 cycles. The specific capacitance of RuO2·nH2O films annealed at 100℃reaches the maximum of 0.0838 F/cm2.Key words: electrodeposition; RuO2·nH2O films; capacitance; annealing temperature

结果表明，未经退火处理的RuO2·nH2O薄膜的电容性能不稳定，在循环伏安法测试中电容量随循环次数的增加而降低；将RuO2·nH2O薄膜分别在不同温度(100， 150， 200， 250和300℃)下进行的2 h的退火处理，经退火处理后的RuO2·nH2O薄膜的电容性能经过60次的循环后趋于稳定，其中，经过100℃退火处理的RuO2·nH2O薄膜的比电容最大，其比电容为0.083 8 F/cm2。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。