薄膜

Therefore, firstly, the techniques to determine the gapstate density and distribution of a-Si: H films: the photoconductivity spectrum technique and the phase-shift analysis of modulated photocurrent technique, have been described.

由于a-Si：H薄膜的光电性能在很大程度上取决于带隙定域态的密度及分布，所以本论文首先详细描述了a-Si：H薄膜的隙态密度及分布的测量技术—光电导谱技术和调制光电流相移分析技术。

The nitrogen content in terms of atomic percentage under different conditions was identified by X-ray photoelectron spectra.

同时用X射线光电子能谱确定了不同条件下薄膜中N原子的百分比，用原子力显微镜对薄膜的表面粗糙度及表面形貌进行了测量和表征。

Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil .

通过台阶仪测量厚度在3～4μm的Si平面薄膜，在扫描范围为1000μm时，它的表面粗糙度为几十纳米；SEM测量表明，Si薄膜表面颗粒度在纳米量级；探讨了采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。

The invention has the advantages that by means of single film growth craft, supporting structures of a pier, a bridge leg, and a deck are accomplished, thus greatly lowering the difficulty and complicity of the craft; the pier, the bridge leg, and the deck are formed into a trinity, thus assuring the mechanical support of the whole micro bridge to be firmer and to have higher stability; meanwhile, the pier manufactured by means of the single film growth craft has a hollow shape, thus ensuring that the manufacturing process of the electrical channel of the micro-bridge structure is more simple, without the need of tapping in the pier; only simple photoetching craft is needed to guarantee the connection between the electrode at the upper end and the electrode at the lower end.

本发明利用一次薄膜生长工艺完成桥墩、桥腿和桥面的支撑结构，大大降低了工艺难度和复杂性，且桥墩、桥腿和桥面三位一体，使得整个微桥的机械支撑更为牢固，稳定性更高；同时，本发明利用一次薄膜生长工艺制作出的桥墩成空心状，使得微桥结构的电学通道制作过程变得更为简单，无需另外在桥墩中开孔，只需简单的光刻工艺即可保证上端电极和下端电极相连。

By the measurement and analysis with the aid of X-Ray diffraction and spectral photometer the structure and optic-characteristics of the films,and the effects of different technological conditions,are studied respectively before and after heat treatment.

通过X射线衍射仪、分光光度计等测试分析，研究了不同工艺条件对上述薄膜性能的影响以及热处理前后薄膜的结构、光学特性。

Created a piezo element with the world's highest degree of distortion through film thickness reduction and materials development.

通过减小压电薄膜的厚度，开发出了世界最高的曲变度的压电薄膜元件。

In addition, the life-time of Kapton films and the equilibrium temperature of the adiabatic plane of the second surface mirror were predicted.

最后对Kapton薄膜的存在寿命和Kapton/Al薄膜二次表面镜绝热平面的平衡温度进行了预测。

The influence of different assembled condition such as assembly method, concentration of zirconium source and pH value on the effectiveness of assembly were evaluated via DSC-TG, FT-IR, Uv-vis and SAXRD et al. It showed that the assembly effectivness of uncalcined 3 Si/Zr_10# sample was best.c The optical characteristic, which including light-conduction in infrared band and polarity in visible band, of dip-coating film and membrane assembled zirconia after processing parameters of assembly optimized were observed via FT-IR and Uv-vis. The polarity was characterized by polarizing angle through calculation from light-transmittance, light-reflectance and fresnel coefficient. qualitative analysis showed that the polarity of Si/Zr_10 # dip-coating film assembled was best.d Adopting zirconium oxychloride as zirconium source, CTAB as template, employing different CTAB adding sequence, two mesoporous zirconia samples were prepared. The template effect of two samples was discussed. It showed that the effect of the sample which CTAB adding sequence was same as mesoporous silica film was better. The light-conduction in infrared band of these samples was also studied, which offered comparison to the polarity of zirconium dioxide assembled within mesopore.

结果显示：组装条件优化后的uncalcined 3 Si/Zr_10#厚膜样组装效果最好，其组装液对应的pH值最利于该锆源离子模板交换组装； c选用FT-IR、Uv-vis对组装条件优化后纳米氧化锆/介孔氧化硅厚膜、纳米氧化锆/介孔氧化硅薄膜包括红外导光性、可见光区内的偏光性在内的光学特性进行了分析，其中偏光性以膜层透光性、反光性及菲涅耳系数计算出的偏振角即布儒斯特角表征，定性分析显示，Si/Zr_10#ZrO_2/介孔氧化硅厚膜偏光性最好； d以氧氯化锆ZrOCl_2·8H_2O为锆源，CTAB为模板剂，采用不同的模板剂加入顺序，探索性地制备两介孔氧化锆样，分析了两介孔氧化锆样的模板效果，得出模板剂加入顺序同介孔氧化硅薄膜时介孔氧化锆样的模板效果较好，并分析了所得样品的导光性，为锆氧粒子引起的附加光学特性分析提供了参考和对比。

The crystalline mechanism difference of microcrystalline and polymorphous silicon was investigated by thermal gradient theoretical and hydrogen etching model.

研究电阻对时间的依赖关系表明氢化硅电阻值随测试时间增大而增大，XPS测试结果表明薄膜的氧化增大了薄膜电阻。

The energy consumption of processing the polytetrafluoroethylene film by the said device is lower than the traditional processing device.

利用本发明所述的设备加工聚四氟乙烯薄膜的能耗低于传统的加工设备，并可加工多层聚四氟乙烯薄膜，层间粘结好，不容易分层，适用面广，生产效率高。

James, son of Zebedee, and John the brother of James, whom he named Boanerges, that is, sons of thunder

载伯德的儿子雅各伯和雅各伯的弟弟若望，并为他们起名叫"波纳尔革"，就是"雷霆之子"

The southern Hungarian university city of Szeged will host part of the project, amounting to 40 percent of the total investment, which will mostly be paid for through Hungary's EU structural funds.

位于塞格德南部的匈牙利大学将负责部分项目，总计占总投入资金的40%。大部分资金将由匈牙利的欧盟结构基金会支付。