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In the process of electro-membrane filtration, the applied operation condition and membrane do not have significant electroosmosis effect through related experiment. Under the operation of 98KPa pressure, only 6% flux was increased, which showed the increase of flux in the applied electric field process mainly from electrophoresis effect. The effect of dye filtration by membrane is mostly influenced by the basic nature of dye, including size of molecular weight, electrophoresis motility and the adsorbability of dye to membrane.

在外加电场薄膜程序中,所用的操作条件以及所使用的薄膜,经电渗透实验显示电渗透的效应不明显,而在98KPa压力操作下,也仅增加6%的通量贡献,显示外加电场程序通量之提升主要来自电泳作用;薄膜过滤染料的效果主要受到染料基本性质的影响,包括分子量大小、电泳动能力与染料对薄膜的吸附能力。

According to the device operating principle and energy equipartition theory of thermodynamics,the mechanical-thermal noise is 9.96×10-9 W/Hz1/2,and the background noise is nearly 3.22×10-11 W/Hz1/2,so that the normalized detectivity is deduced to be 9.03×106 cm·Hz1/2/W.

Hz1/2/W。实验表明,器件的噪声中热机械噪声为主要噪声源,大小主要由浓硼硅薄膜的机械性能和器件结构决定,可以通过增大薄膜厚度,减小薄膜面积,从而增加薄膜的特征频率的方法来减小器件受外界振动的影响,但以降低器件的灵敏度为代价。

Block-copolyimide film from pPDA/ODA-PMDA was studied by TEM, SEM, PLM, ultra-deep three-dimensional microscope, TMA, and WAXD, which showed that the extensile strength and modulus of b-PI film were higher than that of irregular copolyimide film. It was also revealed that there was a large amount of crystallite formed in b-PI film, which was mainly attributed to its chain structure: rigid pPDA-PMDA chains were easy to form crystal nucleus because of phase separation, based on which semi-rigid PMDA-ODA molecular chains began to crystallize.

以pPDA/ODA-PMDA型嵌段共聚酰亚胺薄膜为对象,借助TEM、SEM、PLM、超景深三维显微镜、TMA、WAXD等手段,研究结果表明:b-PI薄膜的拉伸强度、弹性模量均高于无规共聚酰亚胺薄膜;b-PI薄膜中形成了大量的微晶,这是由于刚棒状的pPDA-PMDA分子链段因相分离容易形成晶核,然后半刚性的PMDA-ODA分子链段以PMDA-pPDA为晶核进行晶体生长造成的,而且ODA-PMDA分子链的结晶和酰亚胺化反应基本上是同步进行的。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的,至今人们对PECVD 氮化硅薄膜的研究还很不成熟,尚处于研究探索的阶段,从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究;与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

By Galerkin meshless method, the equations of motion of static rectangular membrane is established. The first ten natural frequencies of the different aspect ratios and the different pull ratios of rectangular membrane with four clamped edges, three clamped edges and one free edge, two opposite free edges and other two clamped edges were calculated. It is feasible and valid to solve the transverse vibration problem of membrane by Galerkin meshless method.

采用伽辽金无网格法,建立了矩形薄膜横向自由振动的运动方程,并对四边固支、三边固支一边自由、一对边固支另一对边自由三种边界条件下,薄膜的不同长宽比及不同单位长度拉力比作用下的矩形薄膜的前十阶固有频率进行了数值计算,结果说明伽辽金无网格法用于求解薄膜横向振动问题是切实可行的。

Further increasing the Cr thickness results in larger grain size and fewer hillocks in the Al pads.

附著性方面,当於铝和ITO锡薄膜间,沈积10 nm的铬薄膜,即可明显提升薄膜附著性,薄膜附著性由小於0.25 N/mm2提升至47.78 N/mm2。

The control principle of electrostatic shaping was introduced according to the balance between electrostatic force and resulting force formed by membrane deformation and the complex shaping process of SMEC. Then, taking the trisection circularity electrode for an example, the distribution characteristic of electric potential in the electrostatic field was analyzed, namely, the expression of potential function in the electrostatic field was deduced by Laplacian equation. And then, by combining the difference equation with electric potential expression, the numerical solutions of electrostatic force in single electrode mode and trisection circularity electrode mode were disposed. Finally, the calculated figure was compared with the ideal paraboloid and comparison shows that more accuracy would be achieved by multi-electrode control.

根据静电力与薄膜变形载荷作用力之间的平衡关系和静电拉伸薄膜反射镜成形的复杂过程,介绍了薄膜反射镜静电成形的控制原理;以三等分环状电极为例,分析了静电场中空间电势分布特性,即从拉普拉斯方程推导出静态场势函数的表达式;然后,利用差分与电势方程结合的方法,对单电极电场力和三等分环状电极电场力进行了数值求解;最后,将计算面形与理想抛物面进行了比较,结果显示,单电极情况下得到的薄膜反射镜面形不是理想抛物面,若采用多电极控制可获得更高的控制精度。

The control principle of electrostatic shaping was introduced according to the balance between electrostatic force and resulting force formed by membrane deformation and the complex shaping process of SMEC. Then, taking the trisection circularity electrode for an example, the distribution characteristic of electric potential in the electrostatic field was analyzed, namely, the expression of potential function in the electrostatic field was deduced by Laplacian equation. And then, by combining the difference equation with electric potential expression, the numerical solutions of electrostatic force in single electrode mode and trisection circularity electrode mode were disposed.

根据静电力与薄膜变形载荷作用力之间的平衡关系和静电拉伸薄膜反射镜成形的复杂过程,介绍了薄膜反射镜静电成形的控制原理;以三等分环状电极为例,分析了静电场中空间电势分布特性,即从拉普拉斯方程推导出静态场势函数的表达式;然后,利用差分与电势方程结合的方法,对单电极电场力和三等分环状电极电场力进行了数值求解;最后,将计算面形与理想抛物面进行了比较,结果显示,单电极情况下得到的薄膜反射镜面形不是理想抛物面,若采用多电极控制可获得更高的控制精度。

The effects of annealing temperature and monolayer thickness on the structure and surface morphology of STO thin films were investigated.

研究了退火温度以及单层薄膜厚度对STO薄膜结构及表面形貌的影响。采用X-衍射表征薄膜的微观结构,利用原子力显微镜观察薄膜的表面形貌。

Similarly, the AMR begin to increase and then decrease with increasing the thickness d of the seed layer, and has a maximum value at a critical thickness d of 5.32nm. Compared to the permalloy films deposited on Ta seed layer ,the AMR enhancement of 10%-46% is observed in the permallay films deposited on (Ni0.82Fe0.18)1-xNbx seed layer.(2) The coercivity Hc1 obtained for magnetic field H applied paralley to the easyaxis is large than Hc2 for H applied perpendicular to the in-plane easy axis, and both of coercivity are consistent with the change of x.

2沿样品易轴方向的矫顽力Hc_1比难轴方向的矫顽力Hc_2大,两者随Nb原子的百分含量x的变化是一致的,饱和磁化强度Ms随x的增大先增大后减小,在x=27.1%处,Hc_1和Hc_2都比较小,而Ms则达到最大;种子层厚度d不能明显改变坡莫合金薄膜的磁性能;与以传统材料Ta为种子层的坡莫合金薄膜相比,以Ni_(0.82Fe_(0.18)_(0.829)Nb_(0.271)为种子层的坡莫合金薄膜的矫顽力只有轻微减小,但是Msg 以w讪Fq.t)lkNk为种于层的坡莫合全薄膜的各向异性戳电阻及磁性能研究却要大,mk坡莫合金层厂度!

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