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With reductive atmosphere annealing at 900-1000℃, STO thin films with (200)-oriented and smooth surface were obtained with optimized parameters.

在900-1000℃下还原气氛中退火制备STO薄膜。优化工艺参数得到(200)单一取向且表面平整的STO薄膜

During the history of the ripple structure was formed, the dislocation-like, crack and oriented surface crack easily happed in the ripple structure.

另外,大面积涟漪结构在薄膜表面形成过程中,会在PDMS弹性薄膜内强度较弱之分子链结构与缺陷处,产生类差排、裂痕及排向表面裂缝等缺陷。

The paper introduced the method and the theory of Lead Sulfide film preparation——Chemical Deposition and analyzed the reason of outshoot cling to the surface of Lead Sulfide film during the process of chemical deposition .

本文介绍了PbS薄膜常用化学沉淀的制备方法及原理,深入分析了基片沉淀过程中表面出现突出物现象的原因,薄膜基片电镜分析以及改善PbS基片表面均匀性的工艺方法。

But if addition of static field was overhigh,RhB would directly take place electric oxidation, ITO/TiO_2/CdS composite films justacted as a conductive electrode with very large resistance, so the degradation rate ofITO/TiO_2/CdS composite films to RhB reduced instead.

如果外加电位过高,RhB就会直接发生电氧化,ITO/TiO_2/CdS复合薄膜只是作为一个电阻很大的电极来导电,所以本应该作为催化主体的ITO/TiO_2/CdS复合薄膜对RhB的降解率反而降低。

The influence of sputtering pressure on structure character,morphology,overpotential,resistivity and growth rate was studied.

采用对靶直流磁控溅射设备制备镍铁氧化物催化薄膜,研究了溅射气压与催化薄膜的结构、表面形貌、过电位、电阻率及生长速率之间的关系。

The Bi2Te3 film is p-type semiconductor film, and the resistivity will decrease along with the thickness increasing of films.

得到的P-型半导体Bi2Te3薄膜,其电阻率随薄膜厚度的增大而减小。

Using this technique, fluorine atoms can be introduced into poly-Si films to passivate trap states, and hence the performance of SPC poly-Si TFTs can be significantly improved.

利用此技术,氟原子可以有效地被导入复晶矽薄膜中以消除薄膜中的载子补获态,进而有效地提升元件特性。

Xinle HuaBao Plastic Film Co.,Ltd.imports internationaladvanced production lines,by virtue of new technology and super technique of production ,deals with the exploitation,research and production of various plastic film.S o our company is a professional factory that produces high grade PEBA ventilating film and tri-layer co-extruded PE punching base material film at domestic.

新乐华宝塑料薄膜有限公司,引进具有国际先进水平的生产线,凭借新工艺和高超的生产技术从事塑料薄膜的开发、研制、生产,是当今国内生产高档PEBA透气膜、三层共挤PE打孔基材膜的专业厂家。

The invention relates to perforated films comprising at least one layer, and to packages prepared from the same.

本发明涉及包括至少一层的穿孔薄膜,以及由该薄膜制得的包装。

The anisotropic magnetoresistance and saturation magnetic field of the Permalloy thin films (Ni0.81Fe0.19) sputtered on a nonmagnetic (Ni0.81Fe0.19)0.66Cr0.34 buffer layer were measured. The AMR variations of the films after annealing and the size effect of the AMR stripes after etching were emphatically studied, and a qualitative analysis was proposed through a statistic model. The simulation results agree with the experiments.

研究了以非磁性(Ni0.81Fe0.19)0.66CR0.34薄膜作为过诞层的坡莫合金Ni0.81Fe0.19薄膜的磁电阻效应和饱和磁场,分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应,并建立一个统计模型定性分析了其性能变化的机理,计算结果符合实验。

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