薄膜

The Sn doped makes the electrical conductivity change from insulator to n-type semiconductor.

用共蒸发法制备掺锡的C60薄膜，发现掺入的Sn原子的薄膜导电性由原来的绝缘体变为N型半导体。

First SnCl2·2H2O and SbCl3 were dissolved with ethyl alcohol respectively,then nesa coatings were prepared with different ratio of Sb/Sn sols by different methods as such dipping-coating,spraying and spinning .

将SnCl2.2H2O和SbCl3分别溶解于乙醇中，搅拌至完全溶解，以不同的Sb/Sb混合制备得到溶胶后，分别采用浸渍提拉、喷涂、旋涂工艺制备透明导电膜，并考察了不同制备工艺及热处理温度对膜的厚度、薄膜方块电阻以及对薄膜透光率的影响，运用XRD、SEM、TEM对所制备的透明导电膜进行了分析表征。

It was found that the resisitivity of TiO2 thin films varied in the range from conductor, semiconductor to nonconductor in room temperature.

室温下测量TiO2薄膜的电阻率发现，随着厚度的增加TiO2薄膜的电阻率先后在导体、半导体和绝缘体范围变化。

Also, since this study was conducted in low temperature environment, the results of X-ray diffraction analysis showed that the sputtered film was noncrystalline, though with inferior photoelectric characteristics to crystalline, it is more efficient in the etching processing.

另外，由於本研究背景是在低温环境下，因此经X-ray绕射分析结果显示，在此制程条件下溅镀出之薄膜为非晶相，虽光电特性会较结晶相差，但在后续蚀刻处理时效果较结晶薄膜快。

The capabilities of electrical charges storage in SiO〓 film and Si〓N〓 film were studied in a systematic way, and based on these results, new kinds inorganic noncrystalline composite electret were first developed.

本文对SiO〓薄膜以及Si〓N〓薄膜的电荷贮存性能进行了系统研究，并以此为基础发展了新一代无机非晶复合贮电材料，全文分为以下三部分

It is found that the growth mechanism of the iron films is similar to that of nonmagnetic films on liquid substrates,in accordance with a two-stage growth model.

实验发现铁薄膜的生长过程与液相基底表面非磁性金属薄膜的情况类似，基本服从二阶段生长模型。

The preparation of self-supporting film is different from normal film. A series of methods has been formed in the past fifty years.

自支撑薄膜的制备方法与普通薄膜的制备方法有很大的区别，经过近50年的发展，已经形成了一系列独特的制备方案。

The optical properties of different thickness and orientation PbZrO〓 thin film have been studied. The influence of thinkness and orientation on optical properties was analyzed.

研究了不同厚度和不同结晶取向的PbZrO〓薄膜的光学性质，以及薄膜的厚度和结晶取向对光学性质的影响。

Using the vacuum system with the ion-beam assistance, the c-axis oriented and in a-b plane textured YSZ films based on the NiCr alloy and stainless steel substrates have been prepared with the Ar〓、O〓 ion-beam assistance by laser ablation at room temperature.

应用自研制的离子源辅助装置及其配套的激光沉积薄膜真空系统，在Ar〓、O〓离子源辅助激光沉积条件下，制备出了NiCr合金基片和不锈钢基片上c-轴取向和a-b平面内织构的YSZ过度层薄膜。

X-ray diffraction analysis indicated that the deposited films were polycrytalline and oriented perpendicular to the substrate surface (c-axis orientation).

制备的薄膜为多晶薄膜，具有纯氧化锌的六角纤锌矿结构。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新