薄膜

The electrochemical quartz crystal microbalance and cyclic voltammetry were used to study the in situ growth of the hybrid poly/FAD and poly films.

使用电化学石英晶体微天平配合循环伏安法，以研究聚合发光胺/FAD混合薄膜的成长机制及薄膜本身的特性。

Atomic force microcopy, transmission electron microcopy, X-ray diffraction and electron probe are applied to study the microstructure, morphology and chemical composition of the chips, either as-implanted or annealed at different temperatures. It was found that the as-implanted Zn atoms aggregate into clusters scattering about 35 nm beneath the surface of the chips.

利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜，对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征，探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响。

Microscopical morphology and distribution were studied in detail with a deep analysis into lattice levels for the incorporated nanowires.

详细研究了金属纳米线的宏观形貌及其在薄膜中的分布，以及纳米线的微观结构，初步研究了复合薄膜的线性光学性质，并对该方法进行了推广。

The structural modulability and chemical stability of hydrogenated amorphous Silicon Carbide a-Si_xC_(1-x:H films makes it suitable as a barrier layer for low K porous dielectric films.

非晶碳化硅薄膜的结构可调制性及化学稳定性使其成为Cu/超低k多孔介电薄膜结构的扩散阻挡层优异候选材料。

At first, the luminescence properties of conjugated polymer thin films and molecularly doped polymer films are experimentally studied.

对聚合物薄膜的基本光学特性的研究是利用其设计薄膜器件的基础。

In this paper, the relations between the transparence of polymer film and polymer structure, phase, and movability of photon have been studied by using stable and unstable scattering rates under different boundary conditions.

利用在给定一系列边界条件下的稳定，非稳定散射研究聚合物薄膜透光性与物质的结构、相态、光子运动等物理性能的关系，为工农业和先进技术合理选用聚合物质薄膜，提供了重要的理论和应用价值。

The research team have ever fabricated the thin-film of ther mocouples by Multiple Arc Ion plating, and the contributions of the film are deviating from the target, so the Seebeck coeffcient is not in accordance with the normal thermocouples composed of Ni-Cr/Ni-Si wires, which lead to the larger error when Ni-Cr/Ni-Si wires was applied to the cuting test as compensation lead.

本课题组曾采用多弧离子镀方法制备Ni-Cr/Ni-Si薄膜热电偶，由于薄膜成分偏离标准大块Ni-Cr/Ni-Si材料，导致热电偶塞贝克系数与标准Ni-Cr/Ni-Si丝式热电偶相差较大。

In order to prepare the purified poly silicon thin film, we deposited a bed of nickel on the samples face by Magnetron Sputtering method, then put the samples into anneal for some time and cleaned them with diluted muriatic acid.

为了能制备出纯度高的多晶硅薄膜，我们采用磁控溅射法在薄膜上面沉积一层金属镍膜，然后进行退火处理并用稀盐酸清洗。

The electric and semiconductor properties were studied by four-probe method, and the results show that the Cu3N thin films are n-type semiconductor.

运用四探针法测量了薄膜的电学和半导体特性，证明了实验制备得到的Cu3N薄膜是一种n型半导体，禁带宽度约为1。

Lead oxide is a traditional n-type semiconductor material, and it has many advantages, such as low growth temperature, simple preparation methods, high photoconductive and corrosion resistance properties.

氧化铅是一种传统的n型氧化物半导体材料，具有很多的优点，如生长温度低，制备方法简单，耐腐蚀性强，具有很好的光电特性和气敏特性等等，由于氧化铅的这些优点，氧化铅薄膜被广泛应用于透明导电薄膜、摄像、光电探测、气体敏感和耐腐蚀保护膜等领域。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新