薄膜

We report an experimental study of the glancing angle deposition and obliquely deposited Magnesium fluoride for vapor deposited thin films.

中文摘要本论文针对氟化镁材料以热蒸镀及斜向沈积技术制镀微观结构薄膜，以单一斜向沈积以及连续交错沈积法来制作非均向性的光学薄膜。

Tripp from the Department of Infectious Diseases at the University of Georgia, fabricated a hetero-structured silicon/gold nanorod array by the glancing angle deposition thin film method and functionalized it with anti-Salmonella antibodies and organic dye molecules.

Tripp博士通过双折射薄膜界面的方法而结构一个硅/金的异质结构的纳米棒列阵薄膜，并整合上抗沙门氏菌的抗体与组织染色分子发扬作用。

Tripp from the Department of Infectious Diseases at the University of Georgia, fabricated a hetero-structured silicon/gold nanorod array by the glancing angle deposition thin film method and functionalized it with anti- Salmonella antibodies and organic dye molecules.

Tripp 博士通过双折射薄膜界面的方法而构造一个硅/金的异质结构的纳米棒列阵薄膜，并整合上抗沙门氏菌的抗体与组织染色分子发挥作用。

In this paper, a method for determining the thickness of diamond films has been developed by using grazing incidence X-ray technique. It is based on the variation of diffraction intensities from a crystal plane of the substrate at different grazing angles.

本文研究了用近平行的入射X射线，以掠入射的方式，利用薄膜下基体某一晶面衍射强度随掠入射角的变化关系来测定薄膜厚的方法。

The results of SRGID with different grazing incidence angles indicate that the crystal relaxation along the c-axis in ZnO thin film is not uniform.

通过计算得到ZnO薄膜的泊松比为0.504， ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%。

The results of synchrotron radiation X-ray grazing incidence reflection shows that thickness and surface roughness of ZnO thin films grown at 650°C and 0.13Pa are 46.2nm and 0.63nm respectively, and the roughness at the interface is 1.41nm.

同步辐射掠入射X射线反射结果显示650℃，0.13Pa条件下生长的ZnO薄膜的厚度为46.2nm，表面粗糙度为0.63nm，薄膜与衬底界面的粗糙度为1.41nm。

The electrical properties of the CuInSe, thin films are stodied by the Hall effect measurement system.

用Hall效应仪对薄膜的电学性能进行了研究，并且通过XRD研究了薄膜的结构性能。

At last, the Hausmannite manganomanganic oxide (Mn3O4) thin films were deposited by chemical bath deposition and the affect of different deposition parameters on the films was also discussed.

最后，通过化学浴沉积制备出黑锰矿四氧化三锰薄膜，并且研究了不同实验条件对薄膜影响。

ZnO films naturally doped and codoped with N and Al are deposited by helicon wave plasma assisted sputtering method. Their photoluminescence properties have been studied at low temperature.

采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜，对两种不同类型掺杂薄膜的低温光致发光特性进行了研究。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新