薄膜

To improve the performance of the Ti〓O〓 film, some substances are doped in the film.

为了提高薄膜的性能，对薄膜进行了一些掺杂。

The higher resisitivity of the diamond films is an essential factor to its applications in electronics, radiation dosimeter and so on.

金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映，也是影响辐射剂量计器件性能的重要因素。

The invention is concerned with the high state ratio abio-film electricity double steady device and the making method.

本发明属于微电子器件和功能薄膜材料技术领域，具体涉及一种高状态比的无机薄膜电双稳器件及其制作方法。

In this paper, the fabrication process of electrodeposit CoFe2 and micro-structure and magnetic properties of CoFe2O4 thin films which were prepared by electrodeposit oxygenation were systematically studied from experimental aspect,Comparing with micro-structure and magnetic properties of CoFe2O4 thin films which were prepared by RF magnetron sputtering.

本论文系统地研究了电化学沉积CoFe2工艺以及采用电化学沉积氧化法制备的CoFe2O4/Cu/Si(100)薄膜的微观结构和磁性能并与射频磁控溅射制备的CoFe2O4/Cu/Si(100)薄膜的微观结构及磁性能进行了比较。

It is shown that the low potential barrier at the interface is the major cause of the enhancing effects instead of the negative surface electron affinity of the coating.

发明一项超薄类金刚石薄膜在硅微尖锥顶端的精确定位沉积技术，研制出带控制栅极类金刚石薄膜尖端阵列真空微电子源。

The surface structure and the hydrophilic property of the grafted BOPP film were studied through FT-IR, ESCA and contact angle measurement.

采用FT-IR，ESCA，试样与水接触角和接枝率的测定探索了电火花用于引发丙烯酰胺在BOPP薄膜表面接枝聚合反应的方法，研究了接枝BOPP薄膜的表面结构和亲水性能。

The constitution equation for cartilage is of Hooke elastic material type and that of muscle is of exponential type with two material parameters.

气管的软骨部分为薄圆柱壳的弹性小变形薄膜和弯曲变形状态，而肌肉部分为大应变薄膜应力状态，忽略其弯曲刚性。

The weak signal characteristics of the capacitors of PYZT ferroelectric thin films are investigated. It is found that when the PYZT thin film deposited on Pt/RuO2 is rapidly thermal-annealed at 800℃, an almost ideal microstructure of extended PYZT can be acquired, of which, the εr decreases with the increasing of the rapid temperature (εr is about 150 when annealed at 800 ℃).6 refs.

研究发现，沉积在Pt/RuO2底电极上的PYZT薄膜经800℃快速热处理具有较接近理想外延PYZT薄膜结构，而且εr随着快速热处理温度升高而减小，在800℃快速热处理条件下其εr约为150。

It is shown that Zn0.75Co0.25O films grown at low temperatures (250 ~ 350 ℃) are of single-phase wurtzite structure and films synthesized at 300 or 350℃ reveal room temperature ferromagnetism.

第五章研究了生长温度对Co掺杂的ZnO DMS薄膜性能的影响。300℃与350℃条件下生长的薄膜显示出铁磁性。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新