薄膜

A polarizing plate is provided and includes a polarizing film and two transparent protective film, at least one of the two transparent protective films being an optical compensation sheet, the optical compensation sheet being a cellulose acylate film having a thickness of from 40 m to 180 m.

本发明提供了一种偏振片，其包括偏振薄膜和两个透明保护薄膜，该两个透明保护薄膜中的至少一个是光学补偿片，该光学补偿片是厚度为40～180μm的纤维素酰化物薄膜。

The results indicate that the thermal conductivity of Si3N4 thin film increases with the temperature;under high frequency stage the frequency has apparent effect on the thermal con...

测试结果表明：Si3N4薄膜的热导率随温度的升高而增大；高频段下，热导率受频率影响大，误差大；在低频段下薄膜热导率与频率变化基本无关；基于电子与声子的局部热平衡运输方程假设，S i3N4薄膜的热导率具有极度非平衡性；通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率，最佳加热器的宽度选用20μm左右。

The properties of thin films have been investigated with modern analysis technique, such as AFM, SEM, XRD (X-ray diffraction) and Rocking curve. And the properties of YBCO thin film and its substrate and deposition temperature have been analysed, comparing with LAO substrates crystallization quality, YBCO thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of LAO substrate as revealed by XRD.

本文结合AFM、SEM研究YBCO薄膜的表面形貌，XRD、FWHM分析薄膜的结晶情况，并结合成膜温度和基片的质量进行一系列结构与性能的对比研究，发现LaAlO3基片的质量对YBCO薄膜的结构完整性有很大影响，不仅影响了薄膜的c轴取向性，而且影响了YBCO的超导性能。

Small height fluctuations were artificially introduced to the thin film samples by mechanically rubbing the sample surface with a rayon cloth before dewetting initiates. By comparing the dewetting morphology evolution and the characteristic length of dewetting structures of unrubbed and rubbed samples, the results clearly show that the dewetting mechanism for thinner polystyrene films with h≤13. 3nm is spinodal dewetting and that for thicker films with h≥13. 3nm is heterogeneous nucleation dewetting.

通过用绒布在薄膜表面进行摩擦，人为的引入一定程度的厚度涨落，通过比较有和没有表面涨落的薄膜的去湿形貌，可以清楚的识别出厚度小于13.3nm的聚苯乙烯薄膜的破坏机理为旋节去湿，而厚度大于13.3nm的聚苯乙烯薄膜的破坏机理则为成核去湿，形成双连续结构或孔洞都可以导致薄膜的旋节去湿。

The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i.e., 1.73eV above the conduction band edge.

2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。

The interfaces electric circuit and the control program can be transplantated to other micro voltage control equipment very easily.Then we take the C_2H_5Br and the hydrogen (H_2) as the source gas to deposite the gradient bromating amorphous hydrogenated carbon film in the improved low-pressure plasma polymerization unit.

然后在改进的低压等离子体聚合装置中以溴乙烷(C_2H_5Br)和氢气(H_2)为源气体沉积了掺溴非晶碳氢薄膜和梯度掺溴非晶碳氢薄膜，用Perkinelmer Lambda12型紫外／可见分光光谱仪测量了样品的透光谱，并利用透光谱计算了薄膜的光学厚度和光学带隙：利用NICOLET MX—1E傅立叶变换红外光谱仪和XSAM800型X射线光电子能谱仪分析了薄膜的化学键和结合态以及薄膜中氧碳元素比和溴碳元素比。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

The crystalline defects of metallic substrate can promote the formation of multi-crystal thin films. In contrast, the films on the Si single crystal are basically amorphous; The hardness of films are mainly determined by N concentration. The highest hardnesses of Si〓N〓 and TiN films ware obtained at 1. 1 of N/Si and 0.96 of N/Ti respectively. The hardness of Si〓N〓 film decreased dramatically when the free silicon atoms present.

发现薄膜中N原子百分含量主要受氮离子束流和氮气分压的控制，随着氮离子束流和氮气分压的提高，N/Si和N/Ti原子比增加；膜的组织结构则主要受轰击离子束压和基体种类的影响，高的轰击束压可以抑制薄膜的择优取向，金属基体上的晶体缺陷使薄膜易于形成多晶，而单晶硅上的薄膜基本上为非晶态；薄膜的硬度受氮含量的影响最大。

To present an adhesive sheet roll for wafer processing excellent in storage stability, radiation curing property, and low contamination to wafer.

一种保存稳定性、放射线固化性以及对晶圆的低污染性优异的筒状晶圆加工用粘合片，是将由基材薄膜、放射线固化性粘合剂层、以及脱模薄膜按顺序层叠而成的层叠薄膜，多重缠绕而形成的筒状晶圆加工用粘合片，所述基材薄膜和/或脱模薄膜的与放射线固化性粘合剂层接触的面的另外面侧表面的轮廓算术平均偏差为1μm以上，且所述放射线固化性粘合剂层中所含的自由基聚合抑制剂的重量低于1000ppm。

The results showed that with the increase of nitride partial pressure in the range of 2. 0～8. 0×10〓Pa, the hardness of NbN, TaN single layer films decreased, but the hardness of TiN films kept unchanged. The crystal structure of TaN films changed from the mixture of tetragonal β-Ta and faced-center cubic δ-TaN to hexagonal TaN and that of NbN films from FCC δ-NbN to hexagonal ε-NbN. The crystal structure of TiN films is FCC in all the range of partial pressure researched.

研究结果表明：在2.0～8.0×10〓pa的氮分压之间，随氮分压的升高，TaN和NbN薄膜硬度下降，而TiN薄膜的硬度值不随氮分压的变化而变化；TaN薄膜的相结构由低氮分压时的正方β-Ta和面心δ-TaN所组成的两相混合物过渡到六方TaN结构，NbN薄膜则由面心立方结构的δ-NbN逐渐过渡到六方结构ε-NbN，而TiN薄膜的晶体结构基本不随氮分压的变化而变化，均为面心立方结构。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。