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薄膜

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The electrical properties of the films were characterized by their room temperature electrical conductivity and the activation energy.

利用薄膜的暗电导和激活能对硅薄膜的电学特性进行了表征。

These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof.

构造这些边缘轮廓以减少薄膜残余物的量,该薄膜残余物可能形成在半导体晶片的上表面上并靠近其周围边缘的位置处。

Proper adulteration can improve the capability of the films.

掺杂会破坏薄膜的结构,影响薄膜的透射性能。

Aerogel films are prepared to investigate the feasibility to serve as inverse structure for preparation of porous film electrochemically.

气凝胶薄膜主要是用来当作以电化学的方式制备的多孔性薄膜的基板。

The optical transmission decreased when the film annealed in air was subjected to 20% CO at 350℃.

对于经过空气气氛中热处理的薄膜,在350℃通20%CO,薄膜的透射比下降。

TORNINOVA Srl is a company specialized in designing, developing and manufacturing of machines for the production of air bubble film and PE stretch film.

TORNINOVA公司致力於设计、开发和生产适用於气泡薄膜和PE弹性薄膜生产的各类机械设备。

The film annealed in air is similar to silicon dioxide in structure. The appearance of polar bond Si-OH and the shrinkage of film cause the increase of dielectric constant.

大气条件下退火的薄膜样品以类SiO_2结构为主,强极性Si-OH键的生成和薄膜的剧烈收缩导致介电常数的上升。

Or so. What's more, the theory of the films shaping and conducting is discussed. There are some key reactions such as alcoholysis reaction in the processing of Sol preparation, dehydration reaction and condensation polymerization when films are coated and consolidation in the process of desiccation and sinter.

左右。分析了溶胶-凝胶法制备薄膜的形成机理和导电机理,对薄膜形成过程进行分析,归纳出形成过程的化学反应主要有:溶胶制备中的醇解反应、浸渍提拉镀膜中的水解和缩聚反应以及干燥和热处理成膜中的聚合、分解与键合反应。

The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal.

薄膜半导体器件具有在含有碱性金属的玻璃基片1上形成的薄膜晶体管3。

The results showed that morphology transition from polycrystalline to amorphism occurred with O2 pressure increaed while from amorphism to polycrystalline occurred with substrate temperature increased.

结果发现随着氧压的升高,ZrO2薄膜将由单斜相多晶态逐渐转变为非晶态结构,而随着基片温度的增加,薄膜将由非晶态逐渐转变为单斜相多晶态。

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