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The results show that with corona discharge and copolymerization time, the grafting degree of AAM onto BOPP film increases.

结果表明,电火花能有效地引发AAM在BOPP薄膜表面的接枝聚合反应,随着电火花处理时间和接枝反应时间的延长,AAM在BOPP薄膜表面的接枝率增大。

Influence of film thickness on its optical properties, including reflectance, transmittance and absorptance, was studied at wavelengths of 310, 350, 400, 430, 550, 632, 800 and 1200 nm, respectively.

选定波长为310、350、400、430、550、632、800、1200nm时对薄膜的反射率、透射率和吸收率随薄膜厚度变化的关系进行讨论。

The result showed that the carrier concentration of IMO was less than one third of that of ITO.So,the absorptance of visible light in IMO is lower than in ITO,there might br more space to improve the conductivity of IMO.

因此,IMO薄膜对可见光的吸收小,有很大的发展空间可以通过提高载流子浓度而进一步提高电导率,对近红外线也有较高的透射率,有利于拓展透明导电薄膜的应用领域。

The relationship between absorptance and thickness of nano aluminium films in visible and IR re gions indicates that the absorptance of metal films shows dependency on size.

纳米Al膜在可见和红外频段的吸收率随薄膜厚度变化的关系表明,金属薄膜吸收率具有尺寸效应,并具有极大值。

Through fluorescence spectrum and photocurrent action spectrum measurements,we found that fluorescence signal of CdS weakened after TiO_2 film was deposited CdSby electrodeposition, and accordingly improved photoelectric capability of TiO_2 filmand achieved sensitization action.

通过荧光光谱和光电流作用谱结果表明在TiO_2薄膜电极上采用电化学沉积法沉积CdS之后,CdS的荧光信号减弱,从而提高了TiO_2薄膜电极的光电性能,起到了敏化的作用。

GMI effect has beenfound in wire,ribbon and film of soft magnetic materials,while thin film sensors are advantageouson mass-production capability and integration capability with semiconductor circuit,etc,so it ishighly valuable to study the GMI effect in soft magnetic film materials.

巨磁阻抗效应一般出现在软磁丝、薄带和薄膜中,其中薄膜GMI传感器具有批量生产及与半导体电路集成的兼容能力,并降低了生产成本,因此研究软磁薄膜材料中的巨磁阻抗效应具有重要的实用价值。

Polymer-based thin film transistors with poly(3-hexylthiophene)(P3HT) as semiconducting active layers were successfully fabricated on silicon substrates in air which was used as gate electrode, HfTiO film deposited by RF sputtering method was used as gate insulators, and gold metal was used as source and drain electrodes. The HfTiO surface was modified by using octadecyltrichlorosilane solution during fabrication process.

以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管。

The Sympatex membrane production method uses a material made from polyether and polyester and its production involves no use of PTFE or fluorocarbons that are often found in other standard textile membrane materials.

从2011/2012冬季开始,沃德的登山、骑行类服装及鞋类产品原料将采用100%可再生的新保适薄膜。该薄膜由聚醚和聚酯合成,未使用那些在其它织物薄膜中经常出现的聚四氟乙烯或任何碳氟化合物。

One of them is based on etched porous alumina and carbon-gold-carbon compound film. The alumnia film surface is composed of rows of valleys with diameter of about 300 nm, and is realized by etching porous alumina in diluted phosphorous acid.

第一种阴极采用基于多孔氧化铝和无定形碳的双层传导薄膜,其中氧化铝薄膜的表面具有横向尺寸为300 nm的特殊凹陷结构,是对常规多孔氧化铝薄膜进行腐蚀形成的。

We discussed possible origins of the additional scatterings, which might be attributed to the trapped charges, fixed charges, soft phonons, and crystallization in the HfO2 films and HfO2/poly-Si channel interface.

我们讨论了其他发生散射的原因,其中可能是存在於二氧化铪薄膜中和二氧化铪薄膜与多晶矽通道介面间的缺陷电荷、固定电荷、微弱声子、和薄膜结晶化所造成的。

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