薄膜

The composite film appeared semitransparent and brown to yellow from optical microscopy. Results show that shorter time sol-heating results in thiner film with less surface roughness, less conglutination to base, and easily to disconnect, while longer time sol-heating results in thicker film with better conglutination to base and worse roughness. RDX distributes in the film everywhere on the whole but discretely on the scale of 2.4 μm according to EDS results. XRD curve of RDX/RF film shows the superposition of RF non-crystal bread curve and RDX crystals diffraction curve. RDX diffraction peaks are broadened and its crystal size is calculated to be lower to 43 nm.

实验所得薄膜半透明，呈棕红色至黄色；实验表明，溶胶恒温加热时间较短时，所得薄膜的单层厚度较小，较平整，但附着力小，干燥后易脱落；恒温加热时间较长时，所得薄膜的单层厚度较大，不易脱落，但表面平整性较差；能谱测试表明，薄膜中的RDX整体上分布较为均匀，但在测试点位间距为2.4μm的微观尺度上呈离散状分布；XRD测试表明，RDX/RF复合物薄膜表现为RF的非晶态馒头峰与RDX衍射峰的叠加，RDX衍射峰明显宽化，其晶粒度可低至43 nm。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In order to solve this problem that the temperature coefficient of the Chromium-film resistance fabricated at first was low, the main factors effecting on temperature coefficient are studied in this paper on the basis of film theory and experiments.

针对初期制备的铬薄膜电阻温度系数较低的问题，根据薄膜理论分析，研究了影响铬薄膜电阻温度系数的主要因素，根据实验结果不断改进铬薄膜电阻制备工艺，最终制作出了基本满足检测要求的热敏电阻薄膜。

This project was established based on the first cooperative development of optical in situ real time detecting technique probing the atomic scale layer-by-layer epitaxy growth of oxide film. Over the last three years, we have given full play to the advantages and characteristics of both sides and have finished the assumptions and plans of this subject satisfactorily. 1. In Institute of Physics, we set up advanced oblique-incidence reflectivity difference equipment and wrote one data acquisition procedure that made the simultaneous detection of optical signal and RHEED signal into reality. 2. The first observation of sustained oscillations over hundreds of monolayers in both real and imaginary signals during the epitaxy growth of SrNb0.1Ti0.9O3 on SrTiO3 substrate in LMBE testifies that oblique-incidence is an excellent method to detect and monitor film epitaxy growth real time. 3. For the first time, we verify that oblique-incidence reflectivity difference method can be used to monitor the layer-by-layer growth mode during continuous growth through the correspondence between optical signals to atomic or molecular step edge density on the growth surface. 4. Phenomenological analysis shows that optical signals comprise three parts, the first is proportional to the average thickness of the film and depends on the bulk phase dielectric response; the second is proportional to the coverage of terraces and depends on the dielectric response of atoms or unit cells in the terrace; the third is proportional to the coverage of step edges and depends on the effective dielectric response of atoms or unit cells at step edges. This makes oblique-incident reflectivity difference technique a quantitative macroscopic method to monitor film growth.

中文摘要：本课题是在合作首次发展了氧化物薄膜原子尺度层状外延生长光学原位实时探测方法的基础上立项的，三年来，我们充分发挥双方的优势和特点，圆满完成了课题的设想和计划。1、在物理所建立了一套先进的光反射差法装置，编写了计算机系统的数据采集程序，实现了两路光学信号和RHEED数据的同步采集和显示。2、用激光分子束外延在SrTiO3基底上生长SrNb0.1Ti0.9O3薄膜，首次观测到连续外延几百个原胞层，周期振荡的光反射差实部和虚部信号，证明了光反射差法是一种能原位实时探测与监控薄膜层状外延生长的好方法。3、首次验证了通过对生长表面原子或分子台阶密度的响应，光反射差法可用于原位实时监测在连续生长条件下薄膜的层式生长模式。4、通过唯象理论的研究，证明光反射差信号由三项组成，第一项只与薄膜的平均厚度和宏观光学电介质常数有关；第二项与分子台阶面覆盖度和台阶面上分子层的光学电介质常数有关；第三项与台阶边缘的覆盖度成正比，并和在台阶边缘的分子的有效光学介电常数有关。

Raman spectra of polythiophene and poly（para-phenylene） films electrochemically deposited on stainless steel electrodes by direct oxidation of thiophene and benzene in boron trifluoride diethyl etherate solution have been investigated by excitations with 633 and 785 nm laser beams, respectively.

聚噻吩和聚苯的薄膜通过在噻吩和苯的三氟化硼乙醚溶液中电化学氧化得到，它们分别使用633 nm和785 nm的激光进行拉曼实验，新制的聚噻吩薄膜的拉曼光谱和薄膜的厚度密切相关，同样的，新制的聚苯薄膜的拉曼光谱和薄膜的厚度密切相关。

The XRD data indicates that, Ag crystalloidal nanoparticles exist in the films as the annealing temperature above 300℃. As the contrast, non-crystalloidal Ag was found in the films annealed below 300℃. The AFM image of sample imply that, in the Ag layer was first prepared films, nanocomposite films consist of nanosized Ag particles embedded in MgF2 matrix.

在分层镀Ag和MgF2薄膜后，经过热处理使Ag颗粒扩散在MgF2介质中，通过AFM观察，对复合薄膜形貌进行了分析：如果先镀MgF2薄膜，再镀Ag薄膜，发现Ag颗粒主要分布在薄膜的表面，并且富集形成较大的颗粒，表现出块体Ag的吸收特性。

Low temperature ordering of FePt thin films has been achieved by using a thin equiatomic AuCu underlayer.

提出并利用相干生长的多层膜中有序－无序转变过程的彼此关联作用，借助AuCu缓冲层的低温有序化，降低FePt薄膜的有序转变温度200℃以上，为FePt薄膜的低温有序化开劈了一条新途径；制备多层膜，退火形成有序相FePt纳米颗粒分散在Ag基体的复合结构，比FePt/Ag共溅射或合金多层膜方法的退火温度明显降低；通过缓冲层Ta控制FePt的粗糙度和晶界密度，同时界面附近Ta、Pt发生化学反应，两者共同促进薄膜内Pt原子的有效迁移，从而加速FePt有序化；进一步，在Ta和FePt之间插入Bi薄层，强化Ta、Pt的扩散，在更低温度下形成高矫顽力的有序化FePt薄膜且FePt晶粒之间交换作用大大减弱；发现MgO薄膜作底层，可控制与MgO晶粒尺寸大致相当的临界厚度以下的FePt有序化薄膜的（001）取向，同时，MgO和FePt的相对厚度显著影响（001）取向FePt的有序化。

Design the structure of high performance Low-E film including its material and thickness of every layer according to basic optical theory. Carry out an innovative work to calculate its optical performance by characteristic matrices and optical admittance. Compare the results with those we get by traditional measurement.3. Prepare Low-E films with RF magnetron controlled reactive sputtering. The result shows that in the visible region (380nm-780nm), the highest transmittance is 82.4% while the average value is 75%. In the NIR region (780nm-2500nm), the average transmittance is 16.2%. These characters can fit the demand of the glass used in architecture and cars, and also in other applications.4. We novelly use the material Titanium as protective layer to solve the problem that Ag layer would disappear when depositing the second TiO_2 layer. As the protective layer, Ti does not increase the number of targets so as to lower the costs. The thickness of the protective layer Titanium is adjusted by controlling of sputtering time. Results shows the Low-E films get the best optical character when the sputtering time of Titanium is 20 seconds5. We novelly proposed a new transmittance quality factor Q=_·(?_-__ to evaluate the performances of Low-E films, which makes it easier to judge the qualities of Low-E film.6. The photocatalysis of Titanium dioxides is researched and introduced into Low-E films. Sb-doped TiO_2 thin films are prepared. Its photocatalysis and hydrophilicity are measured.

论文的工作主要有：1、总结了低辐射薄膜的制备方法，性能，以及国内外最新研究进展和应用，并对两种类型的低辐射薄膜进行了比较。2、从光学基本理论开始，设计了离线低辐射薄膜的结构，包括每一层的材料和厚度，并创新性的用特性矩阵和光学导纳理论计算了该离线膜的光学性能，利用软件对其进行了仿真，与实际制备的薄膜所测量的性能相比较。3、完成在实验室仪器上制备低辐射薄膜，掌握其工艺条件，解决了超薄金属膜的制备问题，所制备的低辐射薄膜在可见光区(380hm-780hm)最高可达82.4%，平均透射率为75%；在近红外区(780nm-2500nm)的平均透射率为16.2%，其性能达到建筑物幕墙玻璃，汽车前挡玻璃等应用标准，并为进一步的大规模生产打下基础。4、针对中间银层在镀上层膜时易被氧化这一工艺难题，本研究创新性的提出用Ti膜作为保护膜，没有增加新的靶材，提高了生产效率，并节约了生产成本。

Adding transition metals into the TiN films by arc ion plating (1) The hardnesses of theN films are higher that that of the TiN films, proving that the alloy hardening effect is a common phenomenon;(2) The structures of the alloyed films are determined by the added element properties such as covalent radius, electro negativity, free energy and lattice parameters of the MN compound;(3) theN film consists of a mixture of multi phases with high hardness but quite brittle, while the other MN films are composed of single phase with the fcc TiN structure and their hardesses, functions of the added amounts of the elements, manifest always a maximum at a certain M percentage.

一、将过渡金属M用电弧离子镀方法添加于TiN薄膜中：1。N薄膜硬度均高于TiN薄膜硬度，合金强化效应普遍存在；2。薄膜相结构决定于添加元素M的周期律信息，包括M的共价半径、电负性，及MN化合物的自由能、晶格常数等；3。N为多相混合结构，薄膜硬度高，但韧性差；其它N的相结构为TiN类型的单一fcc结构，薄膜硬度随M添加量变化并出现峰值；4。

The adding of anatase nano-crystalline TiO_2 to the deposition solution accelerates the depositing of TiO_2 articles from the deposition solution on the silica glass fiber. A well-combined and durable TiO_2 thin film on silica glass fibers surface obtained by controlling the deposition temperature, deposition time, deposition cycles, concentration of the deposition solution, relative concentration of the deposition materials, pH value of the deposition solution. The effect of the deposition conditions, the drying conditions and the annealing treatment conditions on the surface morphology, section morphology, growth patterns, thickness of the deposited TiO_2 thin films were investigated. Growth rate and particle size of the thin films were controlled by the deposition conditions.

实验结果表明加入微量的锐钛矿型纳米TiO_2诱导晶可以使沉积液中析出的TiO_2粒子更大程度的以锐钛矿型纳米TiO_2粒子的形式析出；通过对沉积温度、沉积液中组分浓度及相对浓度、沉积溶液的pH值的调节与控制，从而控制沉积溶液中化学反应平衡的移动，研究了以上条件对沉积速率、沉积溶液中[Ti6]2–与—OH、[Ti6]2–之间的脱水聚合反应速率的影响，总结出了获得均匀致密质量较好的TiO_2薄膜的一系列实验参数，并对薄膜的生长模式进行了系统的分析研究；通过对沉积时间及沉积次数的分析，可以有效的控制TiO_2薄膜的厚度及质量；通过对薄膜的干燥条件及热处理条件的控制，可以使利用液相沉积法获得的TiO_2薄膜进一步晶化；并分析了对薄膜引起缺陷的主要原因。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。