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The simulated results show that the AO exposures strongly affect the microstructures and properties of the two film materials. For instance, as the AO exposure increases, the mass loss increases, the surfaces of the two types of films roughens, the optical transmittance of Kapton and reflectivity of Kapton/Al mirror degrade, but the solar absorptance of kapton/Al films increases.

结果表明:两种材料的质量损失随原子氧暴露剂量的增加呈线性增大;原子氧暴露后,试样表面呈&地毯&状形貌,且随暴露剂量的增加粗糙度变大;Kapton薄膜的光谱透过率、Kapton/Al薄膜二次表面镜的光谱反射率随原子氧暴露剂量的增加而降低,Kapton/Al薄膜二次表面镜的太阳吸收比Δα随暴露剂量的增加而增大。

The effect of substrata temperature on conduction type, carrier concentration, Hall mobility, and resistivity of ZnO thin films have been investigated.

利用PLD方法制备出Li掺杂p型ZnO薄膜,实现了ZnO薄膜的p型转变,薄膜具有较好的c轴择优取向和可见光区85%以上的透射率。

Keywords TiO_2film;ZrO_2 buffer layer;reactive electron beam evaporation;film thickness;film structure

TiO_2薄膜; ZrO_2过渡层;电子束蒸发;薄膜厚度;薄膜结构

It was found that the composite structure of Ti-Si-N films, nanocrystalline TiN embedded in amorphous Si_3N_4 matrix, was confirmed in this work. The increasing deposition pressure resulted in the appearance of columnar structure, decrease in the film density, increase in the surface roughness, and deterioration of the adhesion strength and tribological properties.

结果表明,Ti-Si-N薄膜为纳米相的TiN镶嵌于非晶态的Si_3N_4基体中的结构,溅射气压的增大导致薄膜中柱状晶的出现,薄膜致密度下降,表面粗糙度增加,结合力和摩擦学性能恶化。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane. And if the film precipitates on the substrate with thermal expansion coefficient different from that of the film, great thermal stress will be introduced during annealing.

对于薄膜特别是柱状晶薄膜,当晶粒在膜平面内的尺寸大于膜厚时,柱状晶粒的上底面和下底面的面积将大于侧面的面积,如果薄膜还附着在与其热胀系数不同的基体上并在不同于沉积温度的条件下退火时,膜中将存在较大的热应力。

Therefor, those films can be used as hard-coating thin films to expand lifetimes of mechanical compound such as cutting tools and dies. For decorative purpers, TiN and ZrN are also employed in some case. In electronic industry, those films are used as diffusion barrier layers between Cu and Si.

这类薄膜既可作为一种耐磨及硬质薄膜而广泛用于各种切削工具、机械零部件,也可作为各种装饰薄膜应用于装饰行业,还可作为Cu 和Si 之间的扩散阻挡层。

Then we studied the photothermal deflection on membrane with high transparence for the first time. When the product of the thermal conductivity and thickness of film is correspond to that of substrate, the thermal conductivity and diffusivity of film could be measured by photo-thermal deflection method.

然后,第一次探讨了透明性好的带衬底的薄膜材料的光热偏转理论,讨论了只有在薄膜热导率与厚度的乘积与衬底的热导率与厚度的积相比拟时,可以使用光热偏转方法测量薄膜的热导率和热扩散率。

The similarities in crystal structures and lattice constants between theLaNiO3 and BST films offer the benefits of better lattice matching and structural compatibilities,and the potential for improved dielectric and leakage current properties.

研究表明LaNiO_3和BST薄膜在晶格结构和晶格常数上的相似性给BST薄膜和底电极提供了更好的晶格匹配,从而改善BST薄膜的性质。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性,开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺,利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计,在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型,器件初步具备了室温红外热成像的能力。

This technology can be employed to create advanced frequency shaping components and devices including filters,duplexers,and resonators for oscillators.

薄膜体声波谐振器采用一种先进的谐振技术,它是通过压电薄膜的逆压电效应将电能量转换成声波而形成谐振,这一谐振技术可以用来制作薄膜频率整形器件等先进元器件。

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