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The precursive Fe3O4 films were sulfurized using constant current electrodepositing and oxidation treating, and Fe3O4 films was transformed into FeS2 thin films after heat sulfur annealing of 400℃ at different sulfurizing pressures.

采用恒流电沉积及氧化处理制备Fe3O4先驱体薄膜,再通过400℃下的热硫化退火,使Fe3O4先驱体薄膜在不同硫压下转变成为多晶FeS2薄膜

Cu doped ZnO thin film can detect 100 ppb propyl alcohol vapor, while Mn doped ZnO thin film exhibits high sensitivity to NH3 and H2O vapor.Furthermore, the photoluminescence properties of ZnO and Tb doped ZnO thin films, heat-treated in different atmospheres, were carried out.

薄膜气敏性研究表明,Ti的掺杂使ZnO膜电阻降低;Cu的掺杂使薄膜对正丙醇的选择性增高,可检测痕量(100 ppb)的正丙醇:Mn掺杂薄膜显示出很好的氨敏和湿敏性能。

The results indicated that the composite films exhibited much improved gas sensing performance.The phthalocyanine and its a-Fe2O3 embedded nano-particulate LB filmswere prepared by Langmuir-Blodgett technique. The films were characterized by AFM, UV-Vis and FT-IR spectra. The results indicated that the embedded LB films were composed of a-Fe2O3 nanoparticles and isopropoxyphthalocyanine molecules. The gas sensitivity of such prepared composite LB films was greatly improved. The film could detect 5ppm of propyl alcohol at room temperature. The composite films could be considered as gas-sensors for alcohols.

利用LB技术制各了异丙氧基酞菁铜LB膜和酞菁铜包埋球形α-Fe_2O_3纳米粒子的杂化LB薄膜,对其AFM、紫外和红外光谱的研究表明,利用LB技术可以实现酞菁与α-Fe_2O_3纳米粒子的有序组装,而且杂化薄膜对醇类气体的灵敏度有较大幅度提高,如对浓度为5ppm正丙醇的灵敏度为3.85,因此,杂化薄膜可以作为室温下醇类气体传感器进行开发研究。

The results show that carefully controlling of deposition conditions and final polishing of the specimens enable us to deposit antireflective infrared diamond coatings on silicon substrate. In order to investigate the thermal properties of diamond coatings nondestructive photo-thermal radiometry method is used with computer simulation and data analysis to get thermal diffusivity and conductivity of the specimens.

本文用光热辐射计量学(Photo-Thermal Radiometry,PTR)方法对于金刚石薄膜的热学特性作了研究,用计算机模拟了热波在样品中的传播过程,用非接触无损检测方法测量了样品,并对测量结果用计算机作数据分析,计算获得金刚石薄膜的热扩散系数及热导率,为金刚石薄膜在热学方面的应用打下了基础。

These coatings have been characterized by the state-of-the-art techniques of XRD, nano-indentation, scratch test, SEM, RBS, etc. As the result, it was found that TiN coatings prepared by -100V DC bias are characterized with the (111) preferred orientation and the coatings prepared by pulsed bias with (111),(200) and (220) hybrid orientations.

通过XRD、纳米压痕仪、划痕仪以及SEM、RBS等手段对薄膜的结构和性能进行了测量和分析,结果发现,-100V直流偏压下TiN薄膜有明显的(111)晶面择优取向,而脉冲偏压条件下TiN薄膜为(111)、(200)、(220)混合晶体取向。

In this thesis, the method of nanoindentation experiment is adopted to conduct research on silicon dioxide thin f.

本文采用纳米压入实验的方法,分别对集成电路工艺中常用的二氧化硅薄膜、氮化硅薄膜和铜互连布线中常用的Cu/Ta/SiO_2/Si结构的多层薄膜进行了研究。

In this paper, the effect of O2 plasma treatment on the leakage current of Cu/SiCOH integrated structure and the dielectric constant of SiCOH low-k films is investigated.

结果表明,SiCOH薄膜表面经过O2等离子体处理后,虽然SiCOH薄膜材料的介电常数略有上升,但其漏电流却有了明显的下降,有效提高了薄膜的绝缘性能。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W,在此基础上,进行不同温度条件的真空退火,得到薄膜TCR在-2.5%~-4.5%范围。

The thermionic emission and tunneling current dominate the conduction process at higher Xc. However, if the film has low Xc, which means lager barrier width, the tunneling current can be neglected.

首次运用二维结构渗流模型计算了微晶硅薄膜结构对电导率的影响,从理论上解释了造成微晶硅薄膜输运各向异性的主要因素是薄膜中晶粒的柱状生长。

The quality change between the ungrafted film and grafted film was analyzed. The surface configuration and constitute of the film were characterized by SEM and IR, and the contact angle was measured.

分析接枝前后的薄膜质量变化,采用SEM、IR等手段对薄膜表面形态及物质组成进行表征与分析,测定接枝前后薄膜的表面接触角。

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