薄膜

It indicates that the PANI particles constituted films are ball like or ellipsoid like; the film takes on tertiary structure; HClO4 servers as both an acid medium and a dopant; the crystallizability of the film seems poor; the relationship between film thickness and acid concentration is not in linearity; the conductivity of the film is on a level with semiconductor, whose value depend more on film appearance than acidity of acid medium; the film starts dedoping at 67.3℃ and end at 277.2℃.

结果表明，构成薄膜的聚苯胺粒子呈球型或椭球型；薄膜具有三级结构特征；高氯酸不仅作为介质酸，同时作为掺杂剂；薄膜的结晶性能不佳；薄膜厚度与介质酸的浓度并非线性关系；薄膜的电导率处于半导体水平；电导率大小与无机介质酸的酸性强弱有一定关系，与表面形貌关系更为紧密；高氯酸掺杂聚苯胺薄膜在67.3℃时开始脱掺杂，在277.2℃脱除完全。

The making process includes: setting insulating solid film on one horizontal rotating carrier with particle detecting unit and etching with single particle beam in the incident angle of 9.6-90 deg to penetrate the film, shifting the film relatively to the single particle beam and etching for the next time, and so on until the film is rotated by one turn to obtain truncated cone shaped, double turned truncated cone shaped or cylindrical single nanometer hole.

本发明将固体绝缘薄膜置于带有粒子检测装置的一个可水平旋转的载体上，用单粒子束刻蚀该薄膜，单粒子束入射角大于等于9.6°、小于等于90°，并且单粒子束在该薄膜底部、顶部、或二者之间与薄膜旋转轴交叉，待单粒子束完全穿透该薄膜后，固体绝缘薄膜底部的粒子监测器反馈使该薄膜被穿透处与单粒子束相对移动1荆再刻蚀，如此反复，直至固体绝缘薄膜旋转一周，获得圆台形、双倒圆台形或圆筒形的单纳米孔。

Film or paper surface dirty, and wrapped it into the dust or clear plastic mulch films after the crease or relaxation phenomena, film hemming switched to a new membrane drying temperature is too high, adhesive surface crust adjust oven temperature, clear crusts partⅱ thermotolerance cohesion and not enough use better glue wrinkle of polymer-coated film transfer after the roll is not the proper balance of films at both ends are inconsistent or wave; adjustment layer of polymer-coated machine too thick, solvent evaporation incomplete, viscosity, pressure drum extrusion, paper (Business card printing and membership card making products) and films between slide to adjust the film covering technology electrothermic roll and rubber roller ends is not plain, pressure is inconsistent, ranging from the adjustment of the linear speed of the machine after the temperature inside the plastic mulch film covering the subject in yellow glue resin particularly resin or additives not resistant to ageing, in the light, heat, under the influence of ultraviolet radiation, chemical change, build the pigments should be switched to a new glue

薄膜或纸张表面不干净，裹入灰尘或杂质清除后再行覆膜薄膜有折皱或松驰现象，薄膜卷边换用新膜干燥温度过高，粘合剂表面结皮调整烘道温度，清除结皮胶的粘接力和耐热性不够换用更好的胶水覆膜后起皱薄膜传送辊是否不平衡；薄膜两端松紧不一致或波浪边；调整覆膜机器胶层过厚，溶剂蒸发不彻底，影响了粘度，受压力滚筒挤压，纸张与薄膜之间产生滑动调整覆膜工艺电热辊与橡胶辊两端不平、压力不一致、线速度不等调整覆膜机器覆膜后易变黄胶水中的主体树脂特别是一些增粘树脂或助剂不耐老化，在光、热、紫外线的影响下，发生化学变化，生成有色物质应换用新胶水

The results showed that the constitutes of thin films by PLD consisted with the targets ,and realizing thin films deposited with same constitutes;All of the films were heteromorphism;It was revealed that the effect of the growth temperature was significant to the diffract peaks of the films and that of the substrate was negligible;the films had rather flatness surface and compact structure;the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm and that of ZnO and Mn doped ZnO films surfaces was less than 100nm;Flat degree was improved with falling of growth temperature and laser energy .

测试结果表明：PLD法制备的薄膜的成分与靶材的基本一致，实现了同组分沉积；所有制备的薄膜都为多晶薄膜，发现薄膜生长温度是影响薄膜衍射峰的主要因素，基片类型对此影响不明显；所有薄膜表面比较平滑，结构比较致密；其中PbSe薄膜的表面不平整度小于200nm，ZnO和Mn离子掺杂ZnO薄膜的表面不平度小于100nm；生长温度和激光能量降低能提高薄膜表面的平整度。

XRD,X-ray EDS analysis,AFM and Fourier transform infrared spectroscopy were employed to characterize PbSe thin films. The results show that all of the films were heteromorphy and the growth temperature has effect to the diffract peaks of the films. The contents of PbSe thin films by PLD consisted with the targets,and realizing thin films deposited with same constitutes; the films had rather flatness surface and compact structure; the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm;they had sensitivity to light of a specified wavelength and obvious absorption edge at 5μm corresponding to band-gap width of PbSe thin films;light of wavelength less than 5μm was strongly absorbed.

通过脉冲激光沉积法在Si(111)和SiO2玻璃基片上制备了PbSe薄膜。X射线衍射、X射线能谱、原子力显微镜、傅里叶变换红外光谱仪测试结果表明：所有制备的薄膜都为多晶薄膜，发现薄膜生长温度对薄膜衍射峰有一定影响；PLD法制备的薄膜的成分与靶材的基本一致，实现了同组分沉积；所有薄膜表面比较平滑，表面不平整度小于200nm，结构比较致密；PbSe薄膜对红外光具有敏感的响应特性；在波长为5μm处存在有明显的吸收边，此吸收边对应于直接带隙PbSe材料的禁带宽度；对应于波长小于5μm的红外光，PbSe薄膜存在有明显的强吸收。

XRD results indicate that the major diffraction peaks of the film match those of Sb2Te3. The film growth is apparently at the ［101］/［012］ orientation and many Te peaks are observed. Hall measurement reveals that all the samples are p-type and the resistivities are low. The electric conductivity of the films approaches that of the bulk metal and the carrier concentration is of 1023 cm-3. Seebeck coefficient measurement shows that the samples have nice thermoelectrical properties and the seebeck coefficients are in the range of 7.8—62 μV/K. Among all, the samples annealed at 200 ℃ for 6 h have the highest seebeck coefficient of about 62 μV/K and the lowest resistivity.

XRD测量结果显示，薄膜的主要衍射峰与Sb2Te3标准衍射峰相同，在［101］/［012］晶向取向明显，存在较多的Te杂质峰；霍尔系数测试结果表明，薄膜为p型半导体薄膜，薄膜电阻率较低，其电导率接近于金属电导率，载流子浓度量级为1023 cm-3，具有良好的电学性能；Seebeck系数测量结果显示，薄膜具有良好的热电性能，在不同条件下制备的薄膜的Seebeck系数在7.8—62 μV/K范围；在所制备的薄膜中，退火时间为6 h、退火温度为200 ℃的薄膜其Seebeck系数达到最大，约为62 μV/K，且电阻率最小。

The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.

研究表明：氮化钛和N 薄膜为多晶态，氮流量决定了氮化钛薄膜的结构和性能，增加氮流量能使氮化钛薄膜的结构向面心立方结构转变，从而得到性能良好的氮化钛薄膜；施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷，使膜层变得更致密，从而提高薄膜硬度；氮化钛主要遵循自由载流子光吸收，氮含量较少时薄膜中的自由电子数目较多，随着氮含量的增加，薄膜中的自由电子数目不断减少，反射率逐渐降低，等离子体频率向低能端移动，从而使薄膜颜色出现规律变化，由金属色银白色到淡黄、金黄再到红黄，并且薄膜亮度呈下降趋势；金黄色的N 薄膜中存在TiN 和ZrN 的分离相，但其为单一的面心立方结构并具有(111)面择优取向；相对于TiN 薄膜，Zr 掺杂后，并没有使薄膜的导带、价带和禁带发生变化，只是在TiN 禁带内增加了新能级，这也正是掺杂Zr 后，薄膜仍

Results show that MoS2-Ti composite coatings grow in islands pattern, their cross-section appear to be dense columnar structure.

结果表明：不同Ti含量的MoS2-Ti复合薄膜呈岛状生长模式，断面呈致密细柱状，结晶状态均为无定形态；薄膜的显微硬度随Ti含量增加而升高；MoS2-Ti复合薄膜在大气中的摩擦磨损性能优于MoS2薄膜，掺杂适当Ti可以使MoS2-Ti复合薄膜的摩擦曲线波动减小，耐磨寿命提高，在本试验研究范围内，含30%Ti复合薄膜的耐磨寿命最长，当Ti掺杂量达到50%时MoS2-Ti复合薄膜失去润滑性能。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Tz = 2Gk q 即 z = 2Gk q /T 40 Suppose the volume between membrane and the boundary plane is V, and we notice that 2 ∫∫ d x d y = M Then we have Thereby we have q qM V =∫∫ zdxdy =∫∫ dxdy = 2GTk 4GTk M 2 Gk = 2V q /T From τ zx =τ xz =, y z 2Gk τ zx /= y q / T τ z y =τ yz = x 41 Moreover, we get 设薄膜及其边界平面之间的体积为V,并注意到 2 ∫∫ d x d y = M 则有从而有由又可得 q qM V =∫∫ zdxdy =∫∫ dxdy = 2GTk 4GTk M 2 Gk = 2V q /T τ zx =τ xz =, y z 2Gk τ zx /= y q / T τ z y =τ yz = x 42 Adjust the pressure q of which the membrane is under, and make the rights of formulas,, equal to one, then we can gain some conclusions as follows:(1) The stress function of wringed pole equals to the uprightness angle of the membrane (2) The torsion M which wringed pole received equals to two times of the volume between the membrane and the boundary plane.

o b y a x 43 调整薄膜所受的压力q，使得，，三式等号的右边为1，则可得出如下结论：(1)扭杆的应力函数等于薄膜的垂度z。(2)扭杆所受的扭矩M等于该薄膜及其边界平面之间的体积的两倍。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。