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In this dissertation, we optimized the thinkness of each layer of TFEL devices using the layered optimization method to obtain ZnS: Ce〓 TFEL devices. Accoding to the energy level structure of Ce〓, two criteria for distinguishing the EL of Ce〓 were found out, from which it was conduded that the TFEL of ZnS: Ce〓 comes from 5d→4f transition of Ce〓. The measurement of brightness waveform showed that the TFEL of ZnS: Ce〓 was the luminescence from independent centers. and there were the field induced-delocalization in this process anf it〓s the cause of low TFEL efficiency of ZnS: Ce〓. In this dissertation, different influence factors on TFEL of ZnS: Ce〓 were sdudied. The influence of different host lattice is different: The blue/green ratio of ZnS: Ce〓 in hexagonal system of ZnS is larger than that in cubic system of ZnS, and the TFEL peaks in hexagonal system of ZnS moves toward longer wavelength compared with that in cubic system of ZnS. The adding buffer layer was used in this stage. The solubility of Ce〓 in ZnS was small and it was another limit to TFEL brightness of ZnS: Ce〓 device. The solubility of Ce〓 increased ten times when using Li ions as flux, so that the TFEL brightness of ZnS: Ce〓 was enhanced. It was found that the appearing of ZnO in active layer improves the TFEL of ZnS: Ce〓: the brightness and the wave range of ZnS: Ce〓TFEL were enhanced.

本文采用TFEL的分层优化方案,优化组合了各膜层厚度,选择最佳制备条件,得到了ZnS:Ce〓的TFEL;根据Ce〓的能级结构,找到了判别Ce〓的EL的两个简单依据,并据此断定ZnS:Ce〓的TFEL的两个发射峰分别属于Ce〓的〓和〓跃迁;亮度波形测量表明ZnS:Ce〓的TFEL属于分立中心发光,分析认为在此过程中存在着较严重的场致离化,这也是ZnS:Ce〓的TFEL效率较低的一个原因;本文考查了影响ZnS:Ce〓的TFEL的各种因素,发现:基质的晶体结构对ZnS:Ce〓的TFEL有所影响,在六角相ZnS中Ce〓的TFEL优于立方相ZnS中Ce〓的TFEL:发射峰的蓝-绿比相对较大,且光谱向短波方向移动,在此项研究中本文采用了在发光层前增镀过渡层的办法,过渡层为六角晶相的ZnO;限制ZnS:Ce〓的TFEL器件亮度的一个原因是Ce〓在ZnS中的溶解度低,本文用Li离子作助溶剂增大了Ce〓的溶解度,增大幅度为一个量级,并且ZnS:Ce〓的TFEL亮度明显提高;从ZnS:Ce〓的TFEL光谱来看ZnS:Ce〓的TFEL波长覆盖范围较小,亮度也不高,达不到做为白色TFEL材料的要求,需要寻找新的白色TFEL材料;在研究ZnS:Ce〓的TFEL中还发现:发光层中ZnO的出现有利于ZnS:Ce〓的TFEL:发射峰变宽、亮度增大。

The changes of morphology and mass in the process of pretreatment, the morphology and the phase constitution of chemical conversion film formed by stannate were studied using scanning electron microscope, X-ray diffraction and the mass loss method. The corrosion resistance of film were studied by salt spay test and damp test.

利用扫描电镜、X射线衍射和质量损失等手段,研究预处理前后的表面形貌及质量变化和锡酸盐化学转化膜层表面形貌及其相组成,采用盐雾和湿热实验箱检验膜层的抗腐蚀性能。

Study on the spectral shift of the filter due to the change of index of lead telluride when used under the condition of low temperature has been made in this paper.

本文首次利用导纳轨迹图解技术,当在空间低温条件下使用时,对由碲化铅的折射率变化引起的光谱漂移机理进行了研究。根据多层膜各膜层间存在的光学厚度的补偿效应,建立了光谱漂移模型。

AFM images revealed that as the sputtering time was prolonged, the film thickness increased, the film became compacter, and the specific area of the film also increased, thus, the release rate of silver ions increased, which led to improved antibacterial properties. EDX test results indicated that increase in film thickness led to increase in silver weight percentage per unit surface, causing improved antibacterial properties. Moreover, when the film thickness was 1 nm, the inhibition percentage of Staphylococcus aureus and Escherichia coli were 100%.

结果表明:随着薄膜厚度的增大,样品抗菌性能提高;溅射时间延长,薄膜厚度增大,膜层的致密性改善,单位面积上的银含量增加,膜层表面积增大,银离子释放几率增大,是提高抗菌性能的主要原因;当纳米结构银薄膜厚度为1 nm时,对大肠杆菌和金黄色葡萄球菌的抑菌率均达到100%。

With the analyses of a great deal of experimental datas, the properties of the optical thinfilm got by IBAD with low energy and high current are better than that got by high energy IBAD.

通过对大量实验数据进行分析,得出利用低能量和大电流离子束辅助沉积光学薄膜时,膜层性能优于高能量离子束辅助沉积膜层

With the analyses of a great deal of experimental datas, the properties of the optical thin-film got by IBAD with low energy and high current are better than that got by high energy IBAD.

通过对大量实验数据进行分析,得出利用低能量和大电流离子束辅助沉积光学薄膜时,膜层性能优于高能量离子束辅助沉积膜层

It was found that, with the increasing of volume fraction of silver and conductor phase, sheet resistivities descend and there are critical thresholds. The average partical size of bismuth ruthenate and PbO-B_2O_3-SiO_2 glass was researched.

研究了各相粉体平均粒径对膜层性能的影响,结果表明:钌酸铋平均粒径越小,膜层的方阻值越小,电阻温度系数偏正,重烧变化率越接近零值,球磨工艺的极限平均粒径为0.56μm。

Results showed that the structure of oxid

结果发现,陶瓷膜的构成与微弧氧化机理有关,均为三层结构,反应时有大量高温硬质相析出;膜层与基体的过渡部分的组织大为细化。

A sample is put on the table which is processed into a inclined plane on the filmed plane, and two interfaces of a film are focalized, then the thickness is read out that is a difference between the heights of two interfaces of a film.

将实验样品的覆膜面打磨成斜面后平放在金相显微镜样品台上,分别对膜层的两个界面对焦,从对焦旋钮上读出两焦面的高度差即为膜层的厚度。

In this study, we evaluated Cr2O3/CrN duplex coating synthesized by PVD cathodic arc deposition processes for potential applications in molding dies Cr2O3/CrN thin films were controlled at the thickness of 3μm Scanning electron microscopy was used to investigate the cross section and thickness.

本研究中,我们以铝压铸模具材料为基材,并利用阴极电弧沈积(Cathodic arc deposition, CAD)法在试片表面沈积厚度3μm之Cr2O3/CrN超硬复层膜,来评估此制程之膜层对高温铝合金之抗熔损性行为。

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