背面电极
- 与 背面电极 相关的网络例句 [注：此内容来源于网络，仅供参考]
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The optimized device process of p-n Alo.85Gao.15As/GaAs solar cells have been investigated. AuBe/Au and AuGeNi/Au were evaporated and metallized to form ohmic contacts of front grids and back electrodes, respectively. Heavily-doped GaAs cap layers were removed by the NH4OH:H202:H3P04:H20 selective etching solution.
分别采用真空蒸发AuBe/Au和AuGeNi/Au并合金化形成欧姆接触制作太阳电池正面栅线和背面电极；采用NH_4OH：H_2O_2：H_3PO_4：H_2O体系的选择性腐蚀液去除高掺杂的GaAs接触层；采用真空蒸发技术制备ZnS/MgF_2双层复合减反射膜。
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On the back surface of the n-type silicon substrate (1), an ohmic electrode (2) is arranged.
在n-型硅衬底(1)的背面上设置欧姆电极(2)。
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The backplane side driving portion is structured by a column electrode driving circuit, a reversing portion, and a reversing switch.
背面侧驱动部分包括列电极驱动电路、换向部分和换向开关。
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The sealant used silicone oxide membrane by sol-gel for seal ing the solder point of leaders and sides and back of device.
采用溶胶－凝胶法[1，2]制备二氧化硅对电极引线的焊点和器件的侧、背面进行封装。
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The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.
未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。
- 推荐网络例句
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According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.
曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。
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The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.
稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。
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When I was in school, the rabbi explained everythingin the Bible two different ways.
当我上学的时候，老师解释《圣经》用两种不同的方法。