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The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现,随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2,在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV,而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A;为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响,我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy, C-AFM),特别针对单一个V型缺陷进行微观电性之量测。

As an advanced forming technology, continuous forming extrusion technology is used to produce oxygen free silver bearing copper alloy profiled bar successfully, and it takes great economic and social benefit for the enterprise.

但是用连续挤压技术生产的无氧铜银合金异型排还存在一些缺陷,夹杂缺陷就是最主要的缺陷之一。

In condensed matter physics,we present an analyticaltopological current theory of point defects which unifies the topologicalquantization,homotopic classification and evolution of defects in oneframework.The number of possible branch lines is shown to be 2s once atmost at the bifurcation point of order parameter with degeneracy s and thetopological charge is conserved during bifurcation processes.

论文在凝聚态物理中给出了缺陷解析的拓扑流理论,将缺陷的拓扑量子化,同伦分类和演化统一在一个框架之内,并证明了在序参量退化度为s的分岔点,缺陷分岔数目最多为2的s次方,而且在分岔过程中拓扑荷是守恒的。

According to the characteristic of tight correlation between memory overrun and loop induction variable arithmetic,extended algebra for chains of recurrences is combined with detection methods based on symbolic execution,for the first time,to design defect detection guide information as to multi-loop,while locality characteristic of software updates and their impact is used.

针对内存访问越界缺陷与循环归纳变量运算紧密关联的特点,首次将递推链扩展代数与符号执行类缺陷检测方法相结合,设计了面向多重循环的缺陷检测指导信息,同时利用软件更新影响的局部性特点,实现了基于路径指导的定向检测和基于更新影响的增量检测。

The method of FSSP is used to classify corrosion, a feature is extracted for the detection of corrosion, and an inversion mathematic formula to inversely evaluate the depth and volume is derived.

采用"频谱分离点"的方法对腐蚀缺陷进行了分类识别,提取了对腐蚀缺陷进行检测的特征量,得到了对腐蚀缺陷深度和体积进行反演计算的数学公式。

The advanced stochastic imperfection method is used to research the imperfection sensitive region of single-layer latticed dome s.

借助结构缺陷稳定分析的改进随机缺陷法,研究了单层网壳结构的缺陷敏感区域。

Firstly,the densities of point defects and line defects in terms of the vector orderparameter fields are obtained directly from the definition of topological charges ofdefects(winding numbers of zero points of the vector order parameters),which aremore general than usually considered and will be a development of the works ofdefects done by Halperin and Mazenko.

本文首先从缺陷拓扑荷(即矢量序参数零点的环绕数)的定义出发得到了以矢量序参数表示的点缺陷和线缺陷的密度。

Lack of penetration is one of the main defects in piping. It is necessary to study the safety assessment engineering method of LOP not only in academic research but also in practice engineering.

未焊透缺陷是在役压力管道缺陷中存在的主要缺陷,研究其安全评定工程方法不仅具有重要的理论意义更具有重要的工程应用价值。

Some features of magnetic flux leakage were used to analyze the length, width,depth of defects and their relationship was given.

分析了大量缺陷漏磁场数据,选取了量化缺陷外形的漏磁场特征,给出了缺陷外形和漏磁场特征的关系曲线。

Gas Production Engineering Research Institute,Southwest China Oil Gas field Company,Guanghan 618300,China)Abstract: Basic principle of time of flight diffraction method was described. Two scan modes D scan and B scan were discussed and the phase characteristic of oscillogram and grey-scale map was also studied. Formula to calculate the location and size of defects was given. The image analysis was carried on three typical defects on standard blocks.

摘 要:描述了超声波衍射时差法的基本原理,讨论了平行扫查和非平行扫查两种扫查方式,研究了波形图和灰度图两种缺陷图谱的相位特征,推导了缺陷精确定位定量的计算公式,并通过标准试块试验对三种典型缺陷进行了图谱分析。

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