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绝缘电阻

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The higher resisitivity of the diamond films is an essential factor to its applications in electronics, radiation dosimeter and so on.

金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映,也是影响辐射剂量计器件性能的重要因素。

An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper.

本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统,在实际应用中,温度波动、异常数据对测量结果产生严重影响,为此我们提出了一些措施。

Every certain distance the heating thread is welded to the generatrix,which makes the continuous parallel connection resistance.

电源母线为二根平行绝缘铜线,在内绝缘层上缠绕电热丝,并将电热丝每隔一定距离与母线连接,形成连续并联电阻。

Shock compression ; resistance measurement ; insulant.

冲击压缩;电阻测量;绝缘材料

Furthermore, the low-resistance metallic mirror layer of the mirror glass of the exterior mirror is subdivided into mutually electrically insulated segments by a grid structure, for example.

此外,将外视镜的镜面玻璃的低电阻的金属镜面层例如用一种网格结构分成相互之间电绝缘的部分。

Though Zener's famous double exchange theory can explain the ferromagnetism/metal --paramagnetism/insulator transition and colossal magnetoresistance successfully, but it is only qualitatively not quantitatively due to neglecting the existence of polaron formed by lattice distortion in this theory.

虽然Zener在1951提出的双交换理论可以定性的解释铁磁金属态到顺磁绝缘态的转变和超大磁电阻效应,但是在定量上与实验数据相去甚远,因为该理论忽略了由于晶格畸变而产生极化子的影响。

Such local distortions can be viewed asintroducing impurity scattering potential in paramagneticphase,largely increase the resistivity and lower the metal-insulator transitiontemperature Tm.

这样的局域结构畸变在顺磁态可认为是引入不纯散射势,从而大幅地增大了电阻率、降低了金属-绝缘转变温度Tm,并且Tm随σ2的变化关系是线性的。

Then,to design the self burned out electric arc circuit breaker,conclued computing theparameter about burned out arc room , isolated constuction ,shuting up electric brake and shunt winding condenser,sealing up construction.

接着,对110kV自能吹弧式断路器进行设计,设计包括灭弧室各项参数的计算、绝缘结构的设计计算、合闸电阻及并联电容器的设计计算以及密封结构的设计计算。

In this paper, the preparation and Temperature Coefficient of Resistance characteristic of nano-VO2 powder/ Poly(3,4-ethylenedioxythiophene) composite is described.

功能复合材料是近年来电子材料研究的热门方向之一,由过渡金属氧化物相与高分子绝缘相组成的复合材料的研究成果屡见报导,而本文所研究的纳米VO2与高分子导电相复合的材料具有负电阻温度系数特性。

It is clear that insulating materials should have such a high specific resistance as to be,to all intents and purposes,nonconductors of electricity.

显然,绝缘材料具有很高的电阻率,因而实际上是不导电的。

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The concept of equivalent rotationally rigidity is offered and the formula of rotationally rigidity is obtained.

主要做了如下几个方面的工作:对伸臂位于顶部的单层框架—筒体模型进行分析,提出了等效转动约束的概念和转动约束刚度的表达式。

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