结构元件

The replica material used in this study is Polydimethylsiloxane. The enlargement of replica compared to original size is 2.34%. Since PDMS is transparent, a layer of metal should be sputtered on its surface to measure optical characteristic, however the accuracy will be affected by the metal coated. The result assumes that Sternocera aquisignata, Chrysochroa rajah and Catoxantha opulenta may have one-dimensional photonic crystal structure. The fabrication of quasi-structure with elytra from Buprestid can promote the applications in the field of photonic structure and optical components.

经PDMS翻印的结果，最小仅增加原始尺寸的2.34%，翻印结果良好，但因翻印结果需镀上一层材料，使得镀上的材料严重影响结构的反射率，造成结构不同反射率也类似的情形，将结构刻画在不需镀金的材料上，将可防止镀上材料影响反射率的问题，并将所制成之结构用於防伪、光子结构研究和光学元件上。

A Foundation Model - the Graded Component Object Model of Product Family is offered on the analysis of knowledge characteristics of PFM. Then, the component object, the Conjunctional Hiberarchy Model of Product and the relationships among component objects are defined respectively. Whereafter, the rapid generating mechanism of the instances of component objects and product is introduced. Based on the theory of GCOM, an Enhanced Model - the Skeleton Model of Product Family is offered.

通过分析产品族模型蕴含知识特性，提出了一种具体的产品族基础模型表达——产品族元件分级对象模型，分别定义了各级元件对象、层次联接结构模型和元件对象关系，并探讨了产品族元件分级对象实例的生成与产品实例快速获取的机制。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

For the first time, we propose the novel Wrapped-Select Gate SONOS memory with split-control gate in NAND architecture. The memory process is not only simple but also compatible with embedded non-volatile memory in conventional standard logic CMOS products. In this thesis, we demonstrate the physical mechanism and elimination of 2nd bit effect in 2 bit/cell operation.

我们提出一种新颖的分离式闸极结构於含有隐藏式选择性闸极之半导体─氧化层─氮化矽─氧化层─半导体记忆体元件於NAND电路阵列结构上，此记忆体元件不仅制程简单也能符合一般数位逻辑CMOS产品中的嵌入式非挥发性记忆体应用。

First of all the differences between photoelectric current / voltage transformer elements in HV and UHV switchgear assembly and independent electric device of conventional open porcelain knob photoelectric current / voltage transformer are described in this paper,then the photoelectric current / voltage transformer elements in HV and UHV switchgear assembly are classified,and the working principle and technical performances of photoelectric current / voltage transformer elements in 500 kV switchgear assembly abroad are introduced in detail.

首先论述了高压和超高压组合电器中光电式电流/电压互感器元件和常规敞开瓷柱式光电电流/电压互感器独立电气设备在概念上的区别，然后对组合电器中光电式电流/电压互感器元件进行了分类。并详细介绍了国外550kV 超高压组合电器中光电式电流/电压互感器元件的工作原理及技术特性。对 ABB 公司、阿尔斯通公司、三菱公司、西门子公司等生产的245～550kV 户外超高压新型组合电器进行了较详尽地介绍和分析，主要是：①基本结构及特点；②主要技术参数

On the basis of researching sealing pipeline joint structures with double-cone pipe union in depth, this paper used the method of Robust Design, synthesized the mainly factors such as geometrical sizes of components, mechanical property of material, surface roughness of components, axial preloading force, fit clearance, taper and the difference of taper etc., and obtained a set of design rational parameters.

本文在深入研究双锥形管接头密封管路联接结构的基础上，运用稳健设计方法，综合元件几何尺寸、材料力学性能、元件表面粗糙度、轴向预紧力、配合间隙、锥角和锥角差等因素，找出了该结构比较合理的设计参数组合。

We demonstrated ultra-thin tandem WOLEDs by locating yellow and blue emitters at corresponding first antinodes to the metal electrode, instead of 1st and 2nd antinodes in conventional tandem OLEDs. This attempt leads to the substantial reduction of operating voltage improvement in power efficiency, compared to conventional tandem WOLEDs. Besides, it shows stable EL spectra under various bias conditions.

本论文提出一超薄堆叠串接型有机白光元件结构，系利用不同波长的光其反节点位置不同的特性，将黄光及蓝光分别制作於各自的第一反节点，而得以在维持原发光效率的前提之下，减少元件整体厚度，进而降低操作电压及提升元件能量转换效率之目的。

Set beer as an example, the mixing turbidity could be as low as below 0.5EBC. A kind of special filter part- filter candle sticks, which are a certain number of hollow metal sticks with special structure and constant space in between each other, is one of the best filter parts till now for its high efficiency and conveniency of cleaning. It is ideal diatomite filter equipment for its small operation space, high efficiency and low running cost.

经过滤的液体能有效除去液体介质中的颗粒物质、酵母菌和其他微生物，使过滤后的介质清澈，光亮（以啤酒为例，混合浊度可达0.5EBC以下）该机采用结构特殊的过滤元件---过滤烛棒，是若干根结构特殊间隙恒定不变的空心金属棒体，过滤效率高，易清洗，是到目前为止最优秀的过滤元件之一，该机占地面积小，生产效率高，运行费用低，是最理想的硅藻土过滤设备。

The paper describes the selection principle of primary schemes for C-GIS and determines the general structure arrangement by comparing different elements and box structure, analyzes the insulating characteristics of SF6 gas and calculates the SF6 gas clearance and along surface insulation. It puts forward the factors that should be considered and strength analysis methods when designing gas chamber structure and analyzes the reasons of influencing the temperature rise of gas chamber and offers the ways of radiating. The vacuum circuit breaker and three-position disconnector are designed for C-GIS and special micro-computer controller for the three-position disconnector is developed. On the basis of new type sensors, suitable control and protection system for C-GIS is suggested. The type test items for C-GIS and its internal elements are introduced to prove that the development is successful.

本文论述了C-GIS产品的一次接线方案选择的原则，在比较各种元件构成及箱体结构的基础上确定了产品的总体结构；分析了SF6气体的绝缘特性，并对SF6气体间隙及沿面绝缘进行了工程计算；阐述了气室设计应考虑的主要因素及强度分析方法，对影响气室温升的原因进行了剖析，并提出散热措施；介绍了C-GIS用真空断路器及三工位隔离开关的设计技术；运用微机技术开发了专用的三工位隔离开关控制器；在阐述新型传感技术的基础上，提出了适用于C-GIS的控制和保护系统；简述了C-GIS产品及内部元件的型式试验项目，证明本产品的研制是成功的。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。