禁带

In addition, the recombination for large numbers of charge carriers would occur in the volume or on the surface of TiO_2. Therefore, the extension of the photoactive wavelength region of TiO_2 into the visible region and improvement of quantum efficiency are desirable for popularizing more TiO_2 photocatalyst, especially under solar light for industrial areas or poor interior lighting illumination in living spaces.

但纳米TiO_2具有较宽的禁带宽度，只能吸收太阳光中5%左右的紫外线，而太阳光中近45%的可见光在处理污染物中却得不到有效利用，因此太阳能的利用率较低，这就限制了其实际使用范围；另外，TiO_2半导体载流子的复合率较高，因此量子效率较低。

Due to big carrier concentration and optical band gap, transparent conductive oxide thin films exhibit outstanding optical and electrical properties, such as low resistively and high transmittance in the visible range etc.

透明导电氧化物薄膜材料具有大的载流子浓度和光学禁带宽度因而表现出优良的光电特性，如：低的电阻率和高的可见光透过率等。目前，此类材料体系包括In_2O_3、SnO_2、ZnO及其掺杂体系In_2O_3：Sn、SnO_2：Sb、SnO_2：F、ZnO：Al等。

The electromagnetic propagation process of a Gaussian pulse through an unmagnetized plasma photonic crystal is investigated.

以微分高斯脉冲为激励源，用算法公式所得的电磁波透射系数来讨论时变等离子体的禁带特性。

The transmission coefficients through unmagnetized plasma photonic crystals are computed ,and the periodic characteristic of band gap structure for unmagnetized plasma photonic crystals is analyzed with them.

以微分高斯脉冲为激励源，用电磁波通过非磁化等离子体光子晶体后所得的透射系数来讨论非磁化等离子体光子晶体的禁带周期特性。

The transmission coefficients through unmagnetized plasma photonic crystals are computed.

结果表明，改变等离子体上升时间可以实现对禁带的控制。

However, this usefulness of GaN for optoelectronic devices seens to be limited by the fact that the defficulty in obtaining p-type material is to grow crystals by admixing GaP to GaN. As will known, GaP with n- or p-type conductivity can be easily obtained by suitable doping. Thus, it might be possible to get n- and p-type GaP_(1-x)N_x or GaAa_(1-xN_x crystals above some critical P content of the alloy system.

把两种或两种以上材料组合起来实现优异性能材料的方法是一种经常使用并行之有效的方法，本论文就是对GaP、GaAs与GaN形成合金系GaP_(1-x)N_x和GaAs_(1-x)N_x进行基础性研究的结果，人们预测这种合金系的禁带宽度应在磷化镓的2.261eV(或砷化镓的1.43eV)到氮化镓的3.39eV之间，如果能制成上述合金系则是很有意义的，它是很有希望的蓝色发光材料。

The crystallite size and forbidden band extent of the FeS2 films slightly decrease with the increasing sulfurizing pressure.

随硫化压力增大，FeS2薄膜的晶粒尺寸和禁带宽度略有减小。

On this bases, according to the electronic configuratiosn of antimony oxide and the principle of p-type doping in wide band-gap semiconductors oxides, we tried to develop a new transparent conducting tin-antimony oxide films with p-type conduction.

在此基础上，根据氧化锑的电子结构特征和宽禁带氧化物p型掺杂机理，尝试在氧化锑中掺入适量Sn元素以获取一种新型p型透明导电氧化物薄膜。

This model anharmonicity in the nearest-neighbor interaction potential produce localized surface mode (S1 mode) with frequency close to the acoustic branch in the gap and localized surface modes (S2 mode) with frequency above the top of the optical branch.

在考虑近邻原子间相互作用势函数中的四次方非线性项后，在相应线性系统频带的禁带中和光学支上面发现了非线性表面局域模(S1模和S2模)。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。