磷化氢

"To achieve such a miracle, the semiconductor industry has gone to extremes, using the world's most toxic substances like Arsine, Phosphine, Hydrofluoride, Hydrobromide and the like."

但是，为了这种"奇迹"，半导体技术也到了无所不用其极的地步，世上最剧毒的物质如砷烷(AsH3)、磷烷(PH3)、氟化氢、溴化氢，等一长串毒品全都用上。

To achieve such a miracle, the semiconductor industry has gone to extremes, using the world's most toxic substances like Arsine, Phosphine, Hydrofluoride, Hydrobromide and the like.

但是，为了这种"奇迹"，半导体技术也到了无所不用其极的地步，世上最剧毒的物质如砷烷（AsH3）、磷烷（PH3）、氟化氢、溴化氢，等一长串毒品全都用上，很快连同步加速器也要用上去了。

A salt of bromic acid.To achieve such a miracle, the semiconductor industry has gone to extremes, using the world's most toxic substances like Arsine, Phosphine, Hydrofluoride, Hydrobromide and the like.Soon, even Synchroton will be used.

但是，为了这种"奇迹"，半导体技术也到了无所不用其极的地步，世上最剧毒的物质如砷烷(ah3)、磷烷(ph3)、氟化氢、溴化氢，等一长串毒品全都用上，很快连同步加速器也要用上去了。

The main flaw is the process of electroplating and phosphating of hydrogen absorption resulting from hydrogen embrittlement.

主要缺陷是电镀和磷化过程中吸收氢而产生氢脆。

In this paper, the composition of zinc phosphating solution used at environmental temperature was researched. The composition is as followings: phosphoric acid 100 mL, monometallic sodium orthophosphate 20 g/L, zinc oxide 25 g/L, bluestone 1 g/L, sodium molybdate 1 g/L, sodium fluoride 1 g/L, tartaric acid 1 g/L.

研究了配制锌系磷化液配方：1 L溶液中加入磷酸100 mL，磷酸二氢钠20 g，氧化锌25 g，硫酸铜1 g，钼酸钠1 g，氟化钠1 g，酒石酸1 g。

A salt of bromic acid.To achieve such a miracle, the semiconductor industry has gone to extremes, using the world's most toxic substances like Arsine, Phosphine, Hydrofluoride, Hydrobromide and the like.Soon, even Synchroton will be used.

但是，为了这种&奇迹&，半导体技术也到了无所不用其极的地步，世上最剧毒的物质如砷烷(ah3)、磷烷(ph3)、氟化氢、溴化氢，等一长串毒品全都用上，很快连同步加速器也要用上去了。

Study on the preparation of γ-alumina-supported molybdenum phosphide hydrofining catalysts;2. Silica-supported molybdenum phosphide s were prepared in a fixed bed reactor by an in situ reduction method from their oxidic precursors.

以SiO2为载体，用钼酸铵和磷酸氢二铵作钼源和磷源，采用共浸渍法制备了负载型磷化钼氧化态前体；在固定床反应器上，用H2原位还原制备了MoP/SiO2催化剂。

There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors. Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic high-electron-mobility transistors. The characterization of hydrogen passivation for InGaP HBTs grown on semi-insulating GaAs substrates is studied. The transient effect caused by hydrogen passivation results the current gain ?

本论文分两部分，第一部份讨论在磷化铟镓的异质接面双载子电晶体中，由於氢的包覆效应产生的特性之研究，由於氢在此种元件中所造成的载子包覆现象是引起电流增益增加的暂态现象的主要原因，本论文提出一个计算氢包覆比例的模型，并与SIMS量测的结果相比对，经过几次热回火处理，此种暂态效应可以被消除。

Appropriate amount of Ni and Co promoters was favourable to the thiophene HDS activities of the supported WP catalysts.The supported WP catalyst showed a higher thiophene HDS activity than that of the sulfurized industrial catalyst at higher reaction temperature.

适量的助剂Ni 和Co有利于负载型磷化钨催化剂噻吩加氢脱硫活性的提高，其噻吩加氢脱硫高温活性优于硫化态工业催化剂。

The aniline HDN was strongly stressed by the presence of quinoline and DHQ and the HDN of quinoline proceeds exclusively via a pathway which involves fully saturated intermediates on the MCM-41-supported nickel phosphides. The HDN activity of nickel phosphide catalyst was dramatically reduced by the presence of H2S and DBT, probably due to the strong adsorption of H_2S and DBT on active sites which inhibited the adsorption of quinoline.

喹啉和DHQ对苯胺的HDN反应有强烈的抑制作用，喹啉在磷化镍催化剂上几乎全部通过完全加氢饱和路径进行反应。H_2S和二苯并噻吩强烈地吸附在磷化镍催化剂活性中心上，阻碍了反应物分子的吸附，从而对喹啉的HDN反应有强烈的抑制作用。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。