碳化硅

The effects of carbonous density、solid volume loading and silicon carbide particle size distribution on the microstructure s and mechanical properties of the welding seams were investigated.

探讨了糊料的碳密度、固相体积含量以及碳化硅颗粒级配对焊缝显微结构和机械性能的影响。

Keywords electronic packaging materials;silicon carbide;feedstork;powder injection molding;debind

电子封装材料；碳化硅；喂料；注射成形；脱脂

Influence of oxygen content of IEP and dispersity of silicon carbide fine powder and mechanism for its dispersity were studied.

摘 要 研究了氧含量对碳化硅微粉的等电点和分散性的影响，同时讨论了SiC粉料在水溶液中的分散机制。

The effects of ultrasonication and HF washing on SiC nano-particles were analyzed by Zeta potential, particle size distribution and SEM. The stability of suspension of SiC in ethanol, ethanediol and mixture of the two medias with PEG as dispersant at different pH were compared. The optimum ultrasonication time for SiC nano-particles was obtained. The influence of HF washing on SiC nano-particles was discussed; and high stability of SiC nano-particles suspension was achieved at pH=10 in ethanediol with 1wt% PEG as dispersant.

本文中采用Zeta电位、粒度分析、SEM等测试技术分析了超声震荡和HF酸洗对SiC纳米粉体的影响：对比研究了乙醇、乙二醇以及75%乙醇和25%乙二醇混合液作为分散介质，聚乙二醇为分散剂时纳米SiC粉体在不同pH下的分散稳定性，确定了粉体最佳超声震荡的最佳时间；探讨了酸洗的作用；并在乙二醇中，以1% PEG为分散剂，pH=10条件下获得了纳米碳化硅粉体的高稳定分散悬浮液。

The amount of yeast has great influence on the porosities and flexural strength of the SiC porousceramics.

酵母粉的添加量也直接影响碳化硅多孔陶瓷的气孔率和抗折强度。

The basis is very hard, frictionally resistant silicon carbide, with its diamond-like crystalline structure.

其依据是辛苦的，摩擦性碳化硅，其金刚石晶体结构。

In contrast,hipping leads to high densities in all cases, independently of the chemical composition of the mixture and the type of SiC powder used.

相比之下， hipping导致高密度，在所有情况下，独立自主的化学成分的混合物和类型的碳化硅粉用。

Reen colour,its hardness is only second to diamond and boron carbide.its hardness and brittleness are higher than C.

C绿色，硬度仅次于碳化硼和金刚石，比黑碳化硅硬度和脆性略高。

In this thesis, first the characters of SiC materials and its growth methods were resumptively introduced. Then some basic theories of the physical picture for the far infrared spectra and the methods of the theoretical calculation were explained. Finally, both the principle of the Fourier Transform Infrared spectrometer and the FTIR instrument were given.

文中首先概要介绍了碳化硅材料的性质及其生长方法，进而给出了远红外光谱的物理图像和理论拟合光谱的公式推导，最后对傅立叶变换光谱的原理进行了说明，并对实验仪器作了简要介绍。

Submicron silicon carbide powders were synthesized via the vapor phase reaction of tetramethyl silicane induced by TEA CO2 laser.

用TEA CO_2激光诱导四甲基硅烷的气相反应，合成了亚微米碳化硅粉末，工作气压为30～300torr(4-40×10~2Pa)，激光功率密度为10~3W/cm~2量级。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。