碲化氢

It is found that , H+ penetrates through ZnS and reaches the interface between ZnS and HgCdTe by SIMS testing. It is analyzed that H+ passivates the interface, reduces the density of interface states and improves the performance of detector.

SIMS测试发现氢化过程中氢离子可以穿过ZnS层到达ZnS与碲镉汞的界面处，分析认为氢离子对界面态起到了钝化作用，降低了界面态密度，提高了器件的性能。

Thin film of tellurium was prepared by chemical vapour deposition on the polyethylene foils using room-temperature decomposition of electrochemically generated hydrogen telluride.

用化学气相沉积法制备碲薄膜，其步骤为：通过电化学方法制得碲化氢，碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜。

Thin film of tellurium was prepared by chemical vapour deposition on the polyethylene foils using room-temperature decomposition of electrochemically generated hydrogen telluride.

摘 要：用化学气相沉积法制备碲薄膜，其步骤为：通过电化学方法制得碲化氢，碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。