硅片

These results provide a theoretical guide to further understanding of the material removal mechanism in wafer CMP.

本文的研究结果可为进一步研究硅片CMP时的材料去除机理提供理论参考依据。

A lens and a paraboloid nozzle were used to focus pulsed CO2 laser and generate impulse.Effects of single pulse energy on impulse coupling coefficient was studied with a high-accuracy compound pendulum and a light figure system.Extension range of pulse energy from 5 J to 70 J was obtained through adjusting working voltage of the laser and energy attenuation of silicon combinations in the experiment.

利用透镜聚焦，抛物面喷管约束，结合复摆和光指针测量系统研究了单脉冲能量对吸气式激光推进冲量耦合系数的影响，实验中通过调节激光器工作电压和硅片衰减实现了脉冲能量5-70 J范围的有效拓展；进一步采用纳秒分幅高速相机拍摄了24 J能量下的流场纹影照片。

According to the results of a series of experiments on surface grinding and dicing on brittle materials, the effects of grinding parameters are discussed.

通过对陶瓷、玻璃和单晶硅片的平面电泳磨削以及对玻璃的微细电泳切割实验，详细讨论了各种工艺参数对电泳磨削加工质量的影响。

Soak the cylinder of the wafers in hydrofluoric acid to disjoin the wafers.

将此"圆柱体"浸泡在氢氟酸中，使硅片互相分离。

Silicon wafer and DLC substrates were used to study the effect of substrates on spreading.

用硅片和DLC膜研究了基体的影响。

With integrated circuits,hundreds of electrum components could be included on one silicon chip less than one-eighth-inch square.

有了集成电路，成百上千的电子元件可以被集成到一块不到l／8平方英寸的硅片上。

According to IS theory as well as die bond requirement in reality, Au/In was chosen by virtue of appropriate equilibrium diagram and high reaction rate from a variety of binary alloy systems as die bond media. To match CET of chip material of silicon, alloy 42 (Iron-Nickel) rather than copper—2 kinds of lead-frame materials in most common usage, was selected as substrate.

根据等温凝固原理和芯片焊接的实际需要，从多组二元合金中选出了共熔点低、反应速度快的金和铟作为焊接材料；并以硅片作为芯片，从目前最常用的框架材料—铜和铁镍四十二合金中，选出了与硅的热膨胀系数相近的铁镍四十二合金作为衬底材料。

In the last part of this paper, equipment model of etch is established by neural network toolbox in Matlab.

论文的第三部分建立了刻蚀机的设备模型，并且使用matlab中的神经网络工具箱模拟了硅片表面的刻蚀工艺结果。

AC plasma is now used for etcher, which supplies much of the energy needed to support a gas reaction near the wafer surface.

电浆分为交流电浆和直流电流电浆，现在的蚀刻机台一般用交流电浆提供发生在硅片表面的气体反应所需的大部分能量。

The motive of this paper is to investigate the relationship between deposition parameters and its properties in order to prepare excellent silicon nitride silicon thin film for gate insulator of TFT.

本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。