硅化的

A gas chromatographic method to determine the conversion of asymmetric hydrosilylation of acetophenone has been established.

建立了由气相色谱法测定苯乙酮不对称硅氢化反应转化率的定量方法，操作简便、迅速，重复性和精密度较好，多个样品各重复6次的变异系数均小于1％，且结果与1HNMR法测定结果一致。

"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."

常用的本质半导体是硅、锗以及砷化镓等的单晶。

Part Ⅱ: The evelopropanation reactions of both semi-stabilized telluronium and arsoniumylides with α,β--unsaturated ketones proceed smoothly.

第二部分：烯丙基、巴豆基、三甲基硅基烯丙基、肉桂基、苄基碲、胂两种叶立德与α，β-不饱和酮均可以成功地进行环丙烷化反应，并且表现出不同的立体选择性。

Mercaptopropyl methyldimethoxysilane was synthesized by thiourea in the presence of tetramethylammonium iodine as a catalyst and mixed liquid containing ethylenediamine and trichloroethylene as a neutralizer, without solvent, in which the reaction temperature, catalysts ,neutralizer and their amounts were optimized.

以四甲基碘化铵为催化剂，乙二胺和三氯乙烯的复合液为中和剂，在无溶剂体系中，用硫脲法合成了甲基巯丙基二甲氧基硅烷。

Poly silica hybrids were prepared through polymerization, condensation and sol gel processes of the mixture of methyl methacrylate, poly and a small amount of coupling agent methacryloxylpropyl trimethoxy siliane in tetrahydrofuran.

采用溶胶-凝胶技术，以硅酸钠为原料制备聚硅酸/四氢呋喃溶胶，再与甲基丙烯酸甲酯及少许偶联剂甲基丙烯酰氧丙基三甲氧基硅烷(MPTMS 混合，经聚合、缩合和溶胶-凝胶过程制备了有机/无机两相间有— C—Si—O—键的杂化材料——聚甲基丙烯酸甲酯/二氧化硅(PMMA/Si O2 )。

A new type of porous silicon carbide was fabricated by filter paper-phenolic resin composite through mold-stacking, drying, carbonization and Si infiltration process.

以滤纸和酚醛树脂为原料，通过模压成型、固化、碳化和渗硅制备出微观结构均匀的多孔碳化硅。

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition silicon nitride thin film is studied.

本文研究了沉积、退火条件及刻蚀液对等离子体化学气相沉积氮化硅湿法刻蚀速率的影响。

A simplified 1/8 model,considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes,was developed.

这里研究了简化的1/8模型，模型考虑了二氧化硅和氮化硅生成过程及堆阳极键合和胶粘结合过程。

This technique is provided by an American doctor to produce gas silicon hydride through hydrogenation-reduction method with a purity of 6.5N (99.99995%).

本项目生产技术由美籍博士提供，采用氢化还原法生产纯度达到6.5N（99.99995%）的硅烷气体。

The TOSHIBA PM7346-BI consists of a silicone phototransistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage AC: 5kVRMS

1第1页，本页显示记录1-14，共14条记录分1页显示东芝PM7346 - BI的由一个硅光光学耦合到一个砷化镓红外发光晶体管在4铅塑料DIP（DIP4）与具有高隔离电压（交流二极管：5kVRMS）。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。