硅化的

It was shown that MFI/MFI core-shell zeolite with high Si/Al shell could be synthesized by using ethylamine rather than TPAOH as organic template under mild hydrothermal conditions.

考察了晶化温度和晶化时间对高硅壳层MFI/MFI核壳型沸石分子筛的合成的影响，其适宜的合成条件为晶化温度高于130 ℃，晶化时间19 h。

Silicon-manganese and aluminium-manganese are used to deoxidize and alloying to substitule ferromanganese,ferrosilicon and aluminium in BOF,which can increase recovery rate of alloys,reduce cost,and improve steel quality.

对氧气顶吹转炉采用硅锰和铝锰替代硅铁、锰铁和铝锭进行脱氧合金化，可以提高合金回收率，降低炼钢成本，提高钢的质量，是较理想的脱氧合金。

In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ～3.19 μs.

这表明多孔硅在硅太阳能电池的实际生产过程中同样可以起到钝化及消除表面符合的作用。

The product was characterized by means of X-ray diffraction, transmission electron microscope and Fourier transform infrared spectroscope.

采用硅烷和氨气在立式双温区流态床中化学气相沉积，制备了形状规则的球状无定形氮化硅纳米粉体，并利用X射线衍射、透射电镜和傅立叶红外研究了该纳米粉体的形貌、成分和物相。

To have a systemic understanding, we study photoemission、theoretics of photon、theoptical wave-particle duality, beginning with essence of light.

它主要应用于硅、锗、砷化镓和其它半导体衬底材料的划槽和切割，特别适用于单晶硅、多晶硅、非晶硅太阳能电池的切割。

After using system of chloric hydrogen sulfide, of 4 chloridize silicon reclaim the problem gets settlement, can change into silicon of 3 chloric cyanogen, and a kind of raw material that this is polycrystalline silicon.

在采用了氯氢化系统后，四氯化硅的回收新问题得到解决，可以转换成三氯氰硅，而这正是多晶硅的一种原料。

The most common materials are amorphous silicon (a-Si, still silicon, but in a different form), or the polycrystalline materials : cadmium telluride and copper indium diselenide.

最常用的材料是非晶硅(a-si，依然是硅，但是不同的形式)或者是多晶硅，镝化镉，铜铟砷CIS，CIGS

Low density silicon nitride with about 55% porosity and globed macropores was prepared by reaction-bonded raw silicon powder and adding 30% in mass pore-forming agent of benzoic acid ball-like particles.

以硅粉为原料，添加质量分数为30%的成孔剂球形颗粒，反应烧结制备了气孔率为55%，具有球形宏观孔的低密度多孔氮化硅陶瓷。

Using LaNiO3 as a buffer layer, highly (100)-oriented PZT thin film heterostructures are successfully prepared using a sol-gel process on both Si and platinized silicon substrates.

采用LaNiO3缓冲层技术，在硅和铂化硅两种衬底上实现了高度(100)择优取向的PZT铁电薄膜。

The standard sample of high pure silicon tetrachloride with certified value of 99.99 % was analyzed. The obtained average determination result was 99.857% after normalization treatment. The relative standard deviation was 0.03%.

对认定值为99.99%高纯四氯化硅标准样品分析，归一化法定量，得到该样品中四氯化硅的测定平均值为99.857%，相对标准偏差为0.03%。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。