硅化的

The rubber compound comprises a rubber which has at least two functional groups which can be cross-linked by hydrosilylation, a cross-linking agent consisting of hydrosiloxane or a hydrosiloxane derivative or a mixture of several hydrosiloxanes or derivatives, which comprise at least two SiH-groups per molecule in the centre, a hydrosilylation catalyst system, at least one filling material and a coagent which can be cross-linked by hydrosilylation.

为此该橡胶混配物包括：具有至少两个可通过氢硅烷化交联的官能团的橡胶；作为交联剂的氢硅氧烷或氢硅氧烷衍生物或者由数种氢硅氧烷或其衍生物组成的混合物，所述氢硅氧烷或其衍生物平均每个分子具有至少两个SiH基团；氢硅烷化催化剂体系；至少一种填料；和可通过氢硅烷化交联的助剂。

At this stage, the solid pyrolyzed products of polysiloxane and polycarbosilane were amorphous silicon oxycarbide and nonstoichiometric silicon carbide containing excess carbon, respectively At higher temperature, structure of the amorphous pyrolyzed products started to rearrange and experienced a disorder →order transformation, even crystallized Cristobalite crystallized from SiO〓C〓, and β-SiC also crystallized from SiO〓C〓 provided carbon content of the starting polysiloxane was high enough, while β-SiC crystallized from SiC〓.

当热解温度达1000℃时，聚合物先驱体的无机化过程已基本完成，其陶瓷转化率值趋于稳定，此时聚硅氧烷的热解产物为非晶态的氧碳化硅，聚碳硅烷的热解产物则为含过量碳的非化学计量比的非晶态碳化硅；随着热解温度的升高，非晶态热解产物的结构逐步调整，发生无序→有序的相变，以至析晶。

The Si/Al ratio of NaY molecular sieve was determined by an empirical formula of lattice constant obtained by extension function method of X-ray diffraction and framework Si/Al ratio of NaY molecular sieve determined by solid nuclear magnetic resonant spectrum method.

前言晶胞参数是决定晶体结构的重要参数之一，Na Y超稳分子筛属立方晶系，由于 Na Y超稳分子筛骨架硅铝比受许多条件的影响，如投料比、晶化温度、晶化压力和晶化时间等。通过研究发现分子筛骨架的硅铝比与其晶胞参数相关，而分子筛的硅铝比可作为合成分子筛产品质量的控制指标 [1] 。

Surface exploration during the same time period identified three separate zones of consistent +1 g/t surface oxide anomalies, extending to 400m southwestof the known deposit. A 2003 airborne survey over Cerro Quilish utilizing Newmont's NEWTEMS geophysical electromagnetic system has identified the continuation of strong silicification extending up to 0.75 miles (1.2 kilometers) southwest of the known deposit.

同一时期所进行的地表勘探确定了三个分离的矿区，其地表的氧化异常都在1克/吨以上，在已知矿床的西南方向上延伸了400公尺。2003年在Cerro Quilish上空使用纽蒙特的NEWTEMS物理探矿电磁系统进行了一次航空测量，结果表明连续的强硅化从已知的矿床向西南方向延伸了0.75英里（合1.2公里）。

Then, the application of MCM-22 in OATS process was investigated. It was found out that with SAR increasing, thiophen conversion first increased and reached maximum at SAR of 75 (98.3%), and then reduced. A postulation was raised that the alkylation reaction mainly occurred at the external surface of MCM-22 zeoltie. The application of MCM-22 in ABLPG process was also investigated.

考察了MCM-22在模拟FCC汽油烷基化脱硫方面的应用，研究表明，随着硅铝比的增加，其噻吩烷基化活性在硅铝比为75时达到最大(98.3%)，硅铝比继续增加，活性则不断降低，提出了噻吩烷基化过程主要发生在分子筛外表面的观点。

Using silicon and metallic iron,α-Si_3N_4 olivary microparticles with a diameter of about 300～500 nm have been obtained at 650℃.When silicon and metallic aluminium were used to react with ammonium chloride,α-Si_3N_4 nanowire bundles with diameter of about 8 nm can be also obtained at 600℃.Since all of the starting materials used are relatively cheap,the methods will have potential prospect in industrial application.3.Graphite-like carbon nitride nanowire bundles with diameters of 200-500 nm were synthesized from the solid state thermolysis of melamine at relatively low temperature(400℃).

相关研究工作的成果发表在International journal of applied ceramicstechnology.2、以廉价的硅铁合金和氯化铵为原料，在600℃合成了α相的氮化硅纳米线束，单根纳米线直径8 nm，长达800 nm，考察了反应温度和反应时间对产物纯度和形貌的影响；以硅粉和铁粉为原料合成了纯度良好，直径为150～500 nm的α-Si_3N_4亚微粒子；以硅粉和铝粉为原料在400-600℃合成了直径为10 nm左右的α相氮化硅纳米线束。

The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

该方法包括以下步骤：在硅衬底上形成可剥离树脂层；在所述可剥离树脂层上形成布线衬底；将半导体芯片安装在所述布线衬底上；通过用密封树脂密封所述多个半导体芯片来形成半导体器件；通过从密封树脂侧将这些半导体器件切分但是保留硅衬底来使这些半导体器件个体化；将每个个体化半导体器件在所述硅衬底和可剥离树脂层之间从硅衬底上剥离；并且通过形成穿过可剥离树脂层的孔或者通过除去可剥离树脂层来使布线衬底上的端子暴露。

In the presence of Pt catalyst, polyhydrodimethylsiloxane reacted with allyl polyoxyethylenepolyoxypropylene ether (F-6) by hydrosilylation to form an intermediate polyether silicone, which further undergo phosphation reaction with phosphorous pentoxide, a kind of phosphate modified polyethersiloxane surfactant was prepared.

采用铂作催化剂，通过含氢硅油和端烯基聚醚（F-6）的硅氢化加成反应先制得聚醚硅油中间体，再将其和五氧化二磷进行酯化反应，制得了一种磷酸酯型有机硅表面活性剂。

The results indicated it was very effective to increase the content of SiC whisker by ammoniating silicasol to decrease the particle size of raw powder and increase the space for SiC whisker growth, and by controlling the reaction temperature to mate the formation of SiC be compatible with the growth of SiC whisker.

工作中系统地研究了反应物料和合成工艺对SiC晶须产率和微观形貌的影响，发现氨解能促进硅溶胶的凝胶化，并细化反应物料，因而有利于SiC晶须的生成；升温速度的控制可使SiC的生成速率与SiC晶须的生长速率得到很好的适应，此为提高SiC晶须产率的有效途径。

UV-curable hyperbranched poly was synthesized via organosilicon polymer bearing silicon hydride end groups and vinyltriallylsilane at the presence of Pt/C catalyst.

通过含硅氢键的超支化聚合物和乙烯基三烯丙基硅烷在铂催化剂作用下反应制备了可紫外光固化的超支化聚硅氧基硅烷。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。