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The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.

用掠角沟道技术和透射电子显微镜分析了这种硅化物的结构。

With the analysis of low angle emergence ,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.

掠角沟道技术有益于研究薄层硅化物的原子深度分布和品格缺陷密度分布。

Results show that fabric first treated with 2% silica, followed immersed in 0.3×10^(-3)mol/L Ag(superscript +) solution for 30 minutes can inhibit 99% colon bacillus even after 50 laundering cycles.

结果表明,硅化物浓度2%、Ag浓度0.3×10^(-3)mol/L、浸渍时间30min的抗菌效果最佳;织物经50次洗涤,其大肠杆菌减少百分率仍在99%以上。

Results show that fabric first treated with 2% silica,followed immersed in 0.3×10~(-3)mol/L Ag~+ solution for 30 minutes can inhibit 99% colon bacillus even after 50 laundering cycles...

结果表明,硅化物浓度2%、Ag+浓度0.3×10-3mol/L、浸渍时间30 m in的抗菌效果最佳;织物经50次洗涤,其大肠杆菌减少百分率仍在99%以上。

In this paper, Ni-SALICIDE process has been investigated intensively for the application to deep sub-micron COMS devices.

本论文对适用于深亚微米CMOS器件的镍自对准硅化物工艺进行了深入的研究。

The experimental data show that the thermal processing can influence strongly the formation of REM silicides, the interface chemical reaction and interdiffusion.

实验结果还表明,热处理对REM硅化物的形成、界面化学反应和互扩散有很强的影响。

The effects of annealing on atomic interdiffusion,silicide formation,and microstructures in Fe/Si systems were analyzed.

由RBS、XRD测量与SEM观察结果,分析了退火过程对磁控溅射制备的Fe/Si双层膜结构原子间的互扩散行为、硅化物形成及显微结构的影响。

The heat-reaction characteristics of Ni/Si and TiN/Ni/Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode.

文中对Ni/Si和TiN/Ni/Si的热反应特性以及NiSi薄膜的形成规律进行了详细的研究。制备了优质的Ni硅化物浅结二极管。

In order to clarify the effect of Pt addition on the stress of NiSi film,?in situ?

利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响。

The transformation temperature from low resistance phase to high resistance phase is above 800℃, which is 100℃ higher than that of NiSi.

NiSi的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺Zr的镍硅化物的转变温度上限提高了100℃。

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