硅

Fused silica is an excellent glass but expensive because of pure silica's very high melt ing point.

熔硅玻璃是极佳的玻璃，但由于纯硅的熔点很高，所以制造费用昂贵。

The high-silica glass with SiO〓 content more than 96% are similar in many kinds of properties to pure silica glass.

高硅氧玻璃中SiO〓含量超过96％，性能接近纯石英玻璃，因此高硅氧玻璃在多种用途上可替代石英玻璃。

AMOC results reveal that S parameter of three lifetime components in oxygen are all bigger than that in nitrogen atmosphere. These are probably caused by the oxygen making the spin-conversion of positronium atoms.

结合正电子寿命-动量关联谱测量结果，本工作分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系，讨论了多孔硅中电子偶素的湮没机制以及气氛对孔径计算理论模型的影响。

The longest lifetime component in PALS results is ascribed to the annihilation of positronium in cavities of PS sample. It is found that 80% of the positrons implanted in PS film have formed positronium atoms. PALS results show that the lifetime of ortho-Positronium has small value when the sample was in oxygen gas medium compared with those in other medium.

正电子湮没寿命谱测试结果表明，样品中存在长达40ns的电子偶素湮没成分，并且进入多孔硅膜层的正电子约有80%形成电子偶素，具有非常高的电子偶素产额；在氧气气氛下，由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因。

The main products are photodiodes, phototransistor, silicon PV, silicon-violet light batteries, infrared light-emitting diodes, photovoltaic intermittent, photoelectric sensors, photoelectric displacement sensors, solar cells, and so on.

主要产品有光敏二极管、光敏三极管、硅光电池、硅紫兰光电池、红外发光二极管、光电断续器、光电传感器、光电位移传感器、太阳能电池等。

Cv. Nipponbare was grown hydroponically to study the effect of different Si application methods on dry weight of plants with or without inoculation, and the effect of Si addition or not on key enzyme activities and the resistance to Xoo after inoculation.

cv。 Nipponbare为材料，在水培条件下，研究接种白叶枯病菌、施硅对水稻干物质累积的影响；接种病菌条件下，施硅与否对水稻叶片关键酶活性的影响及其与水稻白叶枯病抗性的关系。

The mechanical properties and microstructure of high-chromium cast iron containing 13% Cr were studied on the basis of experiments, and it was found that silicon and inoculations influenced the high-chromium cast iron with different microstructures in almost the same way.

在试验的基础上研究了含Cr13%的高铬铸铁的力学性能和组织特点，发现含硅量和变质处理对不同基体的高铬铸铁具有相似的影响规律；根据Fe-C-Cr三元相图对Cr13%高铬铸铁的凝固过程进行了分析，从一个新的角度揭示了铸造条件、含硅量和变质质处理对高铬铸铁性能和组织的影响机理。

Different from the perieutectic reaction Liq+δ→β, perieutectic reaction in Al-Si alloys containing Mn acts as Liq+δ→α.

与铝硅铁三元系中的包晶反应Liq+δ→β不同，加锰铝硅合金中δ铁相的包晶反应则以Liq+δ→α的形式进行。

At the present time, their size has arrived at nanometer scale, and it approximately takes several picoseconds, or even shorter time, for free carriers to transport during such small distances. Therefore, research of carrier dynamics in silicon on shorter and shorter time scale is urgently developed. Processes on such short time scale are difficultly measured by traditional electronic method, so ultrafast spectroscopy method is the only choice of carrying out such experiments. Additionally, application of photoelectric detectors is severely influenced by laser.

近年来，硅半导体器件尺寸不断变小，目前已经缩小到了纳米尺度，载流子在这个尺度内的输运时间大约在ps量级，这促使人们需要对越来越短的时间尺度内硅的载流子动力学进行研究，传统的电子学方法很难对这么短时间尺度内发生的现象进行测量，超快光谱探测几乎成了进行这类研究的唯一测试手段。

In recent years, size of silicon devices has been decreasing. At the present time, their size has arrived at nanometer scale, and it approximately takes several picoseconds, or even shorter time, for free carriers to transport during such small distances. Therefore, research of carrier dynamics in silicon on shorter and shorter time scale is urgently developed. Processes on such short time scale are difficultly measured by traditional electronic method, so ultrafast spectroscopy method is the only choice of carrying out such experiments. Additionally, application of photoelectric detectors is severely influenced by laser.

近年来，硅半导体器件尺寸不断变小，目前已经缩小到了纳米尺度，载流子在这个尺度内的输运时间大约在ps量级，这促使人们需要对越来越短的时间尺度内硅的载流子动力学进行研究，传统的电子学方法很难对这么短时间尺度内发生的现象进行测量，超快光谱探测几乎成了进行这类研究的唯一测试手段。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。