硅

Silicon phthalocyanine dihydroxide was prepared from silicon phthalocyanine dichloride through two methods. The first was alkali treating that meaned silicon phthalocyanine dihydroxide was treated in the ethanol solution containing sodium methylate .The second was acid treating meaned precipitating its solution in concentrated sulfuric acid into ice water. The product yield of the second method was 77.0％, which was higher than the method of alkali treating.

此外将合成的二氯酞菁硅采用两种方法转化为二羟基酞菁硅，第一种方法是碱处理法即将二氯酞菁硅在甲醇钠的乙醇溶液中回流得到，最高收率为53％第二种方法是酸处理法即采用二氯酞菁硅的硫酸溶液在冰水析出的方法转化为二羟基酞菁硅，其中酸溶析出法收率为77.0％。

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The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.

本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。

The preparation process of self-holing polyimide with organosilicon block includes the following steps: 1 the first reaction of polyacid anhydride in functionality not lower than 2, silicon oil with 2 or more amino or imino groups and polyamine with 2 or more amino groups, and the second reaction with one or several kinds of added isocyanate with 2 or more isocyanate radicals to produce sol of polyamido acid containing organosilicon block; 2 solidifying the sol to obtain solid polyamido acid containing organosilicon block; and 3 imidonating the solid to obtain self-holing polyimide with organosilicon block.

本发明公开了一种有机硅嵌段自发孔聚酰亚胺的制备方法，该方法包括以下步骤：(1)有机溶剂中具有大于或者等于2的酸酐官能团度的多酸酐与具有大于或者等于2的胺基或亚胺基的硅油以及具有大于或者等于2的胺基的多胺反应，随后添加一种或多种具有含有等于或者大于2个异氰酸酯基的异氰酸酯反应，生成含有机硅嵌段聚酰胺酸的溶胶。(2)溶胶固化制成有机硅嵌段聚酰胺酸固体。(3)固体亚胺化，即得有机硅嵌段自发孔聚酰亚胺。

It is convenient for sinter to be leached, and the secondary reaction appears little. The slurry after sinter leaching is transferred into autoclave for desilicification at about 170℃, and the siliceous modulus of solution reaches more than 200. Then some lime is added for deep-desilication at normal pressure, the siliceous modulus of solution increases more than 600 even if the Al2O3 content is more than 200g/L.The SiO2 coefficient in hydrate garnet from deep-desilication is more than 0.28. Under conditions of the addition of seed and application of novel technology of carbonization, the contents of Na2O and SiO2 in product are less than 0.37% and 0.025%, respectively.

实验结果显示：烧成的熟料溶出条件宽松，二次反应程度弱；溶出浆液在170℃左右直接进行加压脱硅，脱硅后溶液的硅量指数大于200，再加入适量的石灰进行深度脱硅，即使溶液中氧化铝浓度超过200g/L时，精液的硅量指数也大于600，且得到的水化石榴石中二氧化硅饱和系数大于0.28；通过加入晶种和采用新的碳酸化分解工艺制度，产品中的SiO2 含量降至0.025%， Na2O含量小于0.37%；加入表面活性剂，不仅能将碳分母液蒸发至Na2OT浓度大于300g/L，而且还可有效减缓表面上结疤的形成速度。

It is a luciferous foreground for silicon photodetector because of silicon material abundant resource and being compatible primely with integrate circuit.

在探测器设计方面，由于硅资源丰富，以及硅基探测器能够很好地与硅IC 电路兼容，但因为硅是间接带隙材料，使得硅基探测器在性能方面存在很大的缺陷。

Associations of phases include cyclowallastonite and wallastonite, wallastonite and clinopyroxene, clinopyroxene and melilite, wallastonite and clinopyroxene and melilite, cyclowallastonite and clinopyroxene.

如硅灰石+环硅灰石、硅灰石+辉石、辉石+黄长石、硅灰石+辉石+黄长石、环硅灰石+辉石。

Using silicon and metallic iron,α-Si_3N_4 olivary microparticles with a diameter of about 300～500 nm have been obtained at 650℃.When silicon and metallic aluminium were used to react with ammonium chloride,α-Si_3N_4 nanowire bundles with diameter of about 8 nm can be also obtained at 600℃.Since all of the starting materials used are relatively cheap,the methods will have potential prospect in industrial application.3.Graphite-like carbon nitride nanowire bundles with diameters of 200-500 nm were synthesized from the solid state thermolysis of melamine at relatively low temperature(400℃).

相关研究工作的成果发表在International journal of applied ceramicstechnology.2、以廉价的硅铁合金和氯化铵为原料，在600℃合成了α相的氮化硅纳米线束，单根纳米线直径8 nm，长达800 nm，考察了反应温度和反应时间对产物纯度和形貌的影响；以硅粉和铁粉为原料合成了纯度良好，直径为150～500 nm的α-Si_3N_4亚微粒子；以硅粉和铝粉为原料在400-600℃合成了直径为10 nm左右的α相氮化硅纳米线束。

As our studies showed, silylation of mesoporous molecular sieves with alkoxysilane was an usual method of linking desired organical groups. However, as a result, the a lot of silanol groups still existed on the surface of mosoporous molecular sieves after silylation, which maybe affect the interface property and its catalystic activity. Based on this consideration, a novel method was proposed that a mixture of trichlorosilanes was used to silylate mesoporous molecular sieves, introducing both the further reactive group and hyhrophobic methyl group in one pot.

正如研究表明，通过硅氧烷与介孔分子筛表面的硅羟基反应是常见的键连有机基团的方法，但表面仍会剩余较多的硅羟基，硅羟基的存在会严重影响到介孔分子筛表面性质及催化活性，为此笔者提出采用混合的三氯化硅烷一步硅烷化介孔分子筛，在孔道内同时引入可进一步功能化的氯丙基或氯苄基和疏水性的甲基。

In addition, the hypha could also invade the rice root.3、Making clear the effects of silicon on the resistance to sheath blight and rice growth.Sodium silicate was added into the nourishing in the entire growth period and short period of rice, after being inoculated with R.solani, the rice with application (the Si+ rice) of resistant cultivar 91SP and Teqing had lower (but not statistically significant) disease rating and disease index with relative control effect of 10.02% and 8.70% compared to the Si- rice plants in, but the Si+ rice plants of susceptible cultivar Lemont and Ningjing 1 had significantly lower rating and disease index with relative control effect of 27.42% and 24.29% compared to the Si- rice plants. The results indicated silicon could strengthened the resistance to rice sheath blight, specially strengthened the resistance of susceptible cultivar Lemont and Ningjing 1 remarkedly.

纹枯病菌也能侵染水稻根部。3、明确了施硅对纹枯病的抗病效应和水稻生长的影响全生育期和短期在营养液中添加硅水培水稻试验结果表明，施硅减轻了病级和病情指数，施硅对抗病品种91SP和特青的相对防治效果分别为10.02%和8.70%，而对感病品种Lemont和宁粳1号的相对防治效果达27.42%和24.29%，说明施硅增强了水稻对纹枯病的抗性，特别显著增强了感病品种Lemont和宁粳1号的抗性。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。