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For digital applications, the InGaAs channel with high indium concentration is required for better performance and higher transconductance.

在数位应用时,高铟含量的砷化铟镓通道材料是必须的,使元件能具有好的数位特性表现以及较高速的转导特性。

X9313U-WS Pinout: The coupler consists of a AlGaAs LED that is optically cou- pled to a dielectrically isolated photodiode array which drives two series connected high voltage MOS transistors.

X9313U-WS引脚说明:该耦合器由一个砷化铝镓发光二极管是光凑发光二极体为介质隔离光电二极管阵列的驱动两个串联的高压MOS晶体管。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂,使得电子在元件通道层中的分布更为均匀及对称,以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线,改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

In the second half of the thesis, the basic theory and structure of switch are described. The 60GHz and 77GHz single-pole double-throw switches are designed in shunt configuration with PHEMT on GaAs substrate.

本论文后半部分介绍了开关设计的基本原理及架构,并利用并联型的架构,以PHEMT为电晶体,砷化镓为基板,设计频率工作在60GHz与77GHz的单刀双掷开关。

Numerical examples were given for InAs/GaAs QWRs in both (001) and (111) growth directions for square and trapezoidal QWR crosssections.

数值例子给出的InAs /砷化镓qwrs在这两个( 001 )和( 111 )生长方向,为广场和梯形qwr crosssections 。

The TOSHIBA PM7346-BI consists of a silicone phototransistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage AC: 5kVRMS

1第1页,本页显示记录1-14,共14条记录分1页显示东芝PM7346 - BI的由一个硅光光学耦合到一个砷化镓红外发光晶体管在4铅塑料DIP(DIP4)与具有高隔离电压(交流二极管:5kVRMS)。

It seems at present that the trend that the wireless communication industry adopts the GaAs is already prototyped gradually.

目前看来,无线通讯产业采用砷化镓的趋势已逐渐成型。

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