砷化镓

To have a systemic understanding, we study photoemission、theoretics of photon、theoptical wave-particle duality, beginning with essence of light.

它主要应用于硅、锗、砷化镓和其它半导体衬底材料的划槽和切割，特别适用于单晶硅、多晶硅、非晶硅太阳能电池的切割。

White Island, New Zealand, is an active andesitic volcano that is located near the southern end of the Tonga-Kermadec Volcanic Arc at the convergent plate boundary where the Pacific Plate is being subducted beneath the Indian-Australian Plate.

随著微波技术的日趋重要，对主动元件的要求愈来愈高，而砷化镓假形高电子迁移率电晶体在Ⅲ-Ⅴ族半导体中是一个很重要的元件，主要应用在军事和商业通讯的毫米波和微波频上。

The Au/AuGe(88/12)/Au back-contact metal structure was deposited on the GaAs substrate using an electron-beam evaporator. Various post thermal treatments were employed including conventional furnace and rapid thermal annealing. It was found that the outer Au layer thickness and furnace annealing temperature had large effects on the specific contact resistance.

在实验中我们在砷化镓基板背面进行蒸镀背金结构，而此背金结构是由三层金属所组成，分别为金/锗(12%)金(88%)/金，我们控制最外层金的厚度来量测与观察特徵接触电阻的大小，同时改变炉管加热的温度与快速热退火系统做比较，背金结构之元素分布比较可由欧杰电子分析得到，而扫描式电子显微镜可分析其两者之间的表面形貌差异。

The methods for measuring the characteristic impendence and the effective permittivity at the multi discontinuity of transmission line are introduced.

与传统的微带传输线相比较，这些特殊的平面传输线在制作砷化镓单片微波集成电路时有它们的优点。

A 5 GHz phase-locked loop chip based on 0.2μm GaAs PHEMT (pseudomorphic high-electron-mobility transistor) technology has been realized and characterized.

给出了基于0.2μm砷化镓赝晶高电子迁移率器件工艺设计的高速锁相环芯片的电路结构、性能分析与测试结果。

A 2.6 GHz power amplifier is designed and implemented in hybrid microwave integrated circuit using GaAs pseudomorphic high electron mobility transistor for WiMAX applications.

本论文采用砷化镓拟态高电子移动率电晶体研制应用於全球互通微波存取系统之2.6GHz功率放大器混成微波积体电路。

A 2.6 GHz highly linear low-noise amplifier is designed and implemented in hybrid microwave integrated circuit using GaAs pseudomorphic high electron mobility transistor for WiMAX applications.

本论文采用砷化镓拟态高电子移动率电晶体研制应用於全球互通微波存取系统之2.6 GHz高线性度低杂讯放大器混合式微波积体电路。

The measurements clearly pointed the way to optical communication compact gallium-arsenide semiconductor lasers as the source, low-cost cladded glass fibers as the transmission medium, and silicon or germanium semiconductors for detection.

测试结果清楚地指出了光通信的道路--就是以紧凑的砷化镓半导体激光器为光源，廉价的包层光纤为传输媒质，硅或锗半导体为探测器。

This article introduces the designing principles and characters of laser range finders of pulse-phase type,which is developed by application of GaAs-As semiconductor lasers,and ananlyses the experimental results.

本文介绍了应用砷化镓半导体激光器研制的脉冲相位式激光测距仪的设计原理和特点，并对实验结果进行了科学的分析。

The products fit optic crystal ,optic glass,semiconductor silicon slice,quartz crystal slice ,piezoelectricity porcelain,arsenide gallium,LiNbO3,molybdenum slice and metal, nonmetal brittleness material both and single side poshing and rubbing of pressurizing components.

产品主要适合：光学晶体、光学玻璃、半导体硅片、石英晶体片、压电陶瓷、砷化镓、铌酸锂、钼片、机械密封件等金属、非金属薄脆性材料的双面、单面研磨及双面单面抛光。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。