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Gallium Arsenic is one of important semiconductor materials that is widly used in RF/microwave applications.

砷化镓是一种重要的半导体材料,广泛应用于射频微波领域。

CeO2 nanoparticles were prepared using cerium nitrate and hexamethylenetetramine as starting materials, and the prepared powders were collocated into polishing slurry for chemical mechanical polishing of GaAs wafer.

以硝酸铈和六亚甲基四胺为原料制备出不同粒径的纳米CeO2粉体颗粒,将纳米CeO2粉体配制成抛光液并用于砷化镓晶片的化学机械抛光。

In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

We have investigated magneto transport in gated GaAs two-dimensional electron gases.

我们研究了具闸极的砷化镓二维电子气之磁传输。

STAr provides test intellectual properties,software and expertise to meet the present and future parametric test needs and challenges. Our major customers span across Asia in areas such as sillicon/GaAs foundries,IDMs,design houses,LCD-TFT and wired/wireless components manufactures.

针对矽晶圆与砷化镓GaAs晶圆代工厂、IDM厂商、晶片设计公司、TFT-LCD等光电厂商及有线、无线元件制造商等提供量测相关硬件、软件及测试周边产品,满足厂商现阶段及未来可能面临到的半导体测试需求。

The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.

光电反馈线路采用普通的砷化镓光电导开关,具有结构简单、性能可靠的优点。

At present, this kind of GaAs photoconductor detector has had practical value. It can detect X-ray, gamma-ray, laser pulse successfully at the room temperature.

目前,我们研制的砷化镓光电导探测器可以在室温下对X射线、γ射线及激光脉冲进行测量,有一定的实用价值。

As a sub-nanosecond and pulse radiation detector, GaAs photoconductor detector has a very wide application foreground.

砷化镓光电导探测器作为一种亚纳秒脉冲辐射探测器有很广的应用前景。

This process offers comparable performance to GaAs HBTs with the added advantages of mature and high producible Silicon wafer processing.

这一过程提供了性能与砷化镓异质结双极晶体管的成熟和高硅晶片加工可生产添加的优势。

Third, the mechanism of tantalum inserting as a barrier between Cu and GaAs is investigated.

第三,研究钽作为铜和砷化镓之间扩散障碍层的机制。

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This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

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