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Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来,由于无线通信技术的飞速发展,相关领域的集成电路的设计研究也受到越来越多的关注;同时由于工艺技术的不断进步,MOS器件的特征频率也可以达到几个GHz或更高的水平,原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

Employees of large companies.(Such as IBM, General Electric and Hewlett Packard), also frequently break away and form their own small companies to develop, produce and market new advanced products, services and technologies, such as the gallium arsenide high-speed semi-conductor as a replacement for silicon.

像国际商用机器公司、通用电器公司和赫勒特-帕克特公司这些大公司的雇员也常常离开公司,成立他们自己的小公司,开发、生产和销售新的先进产品,提供服务和技术,如用砷化镓高速度半导体来代替硅片。

The compound semiconductors of III-V Group just as gallium arsenide have hige carrier transition ratio and good optoelectronic performance, so the study and application of these materials are very hot.

砷化镓为代表的Ⅲ-Ⅴ族化合物半导体具有高度迁移率和比硅更优异的光电子等性能,许多国内外关于这类材料的研究和应用一直是热门课题。

Simulant attenuator has been widely applied in microwave and radio networks with MMICS and PIN diode networks.

模拟衰减器在射频和微波网络中有广泛的应用,可用砷化镓MMICS和PIN二极管网络实现。

ABSTRACT Because of its high photoemission performance, gallium arsenide negative electron affinity photocathode has been develo...

砷化镓负电子亲和势光电阴极由于优异的性能,自60年代发现以来,获到了迅猛发展和广泛研究。

ABSTRACT Because of its high photoemission performance, gallium arsenide negative electron affinity photocathode has been developed rapidly and researched widely since it was found in 1960's.

砷化镓负电子亲和势光电阴极由于优异的性能,自60年代发现以来,获到了迅猛发展和广泛研究。

We have performed magnetotransport measurements of the electron g-factor in a two-dimensional GaAs electron gas.

我们进行了对於二维砷化镓电子气之电子的g-系数的磁传输量测。

An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper.

本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统,在实际应用中,温度波动、异常数据对测量结果产生严重影响,为此我们提出了一些措施。

Sub-band high-speed circuits of the past are the use of silicon bipolar and gallium arsenide process design, they have a certain speed on appeal. However, leads the prevalence of large and expensive power shortcomings.

高速的分频电路过去大都采用双极性硅工艺和砷化镓工艺进行设计,它们在速度上有一定的吸引力,但普遍存在功耗较大及价格昂贵的缺点。

For satellite applications, EMCORE offers high-efficiency compound semiconductor-based gallium arsenide solar cells, covered interconnect cells and fully integrated solar panels.

卫星应用, EMCORE提供高效率的化合物半导体的砷化镓太阳能电池,包括互连细胞和完全集成的太阳能电池板。

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