砷化镓

In addition, silicon-germanium is a less expensive material than the compound semiconductors such as gallium arsenide or indium phosphide that have long been used in radar systems.

此外，硅锗是一种不太昂贵的材料比化合物半导体，如砷化镓或磷化铟，长期被用于雷达系统。

Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.

用自制的聚合硅酸铁对砷化镓生产中的含砷废水进行混凝处理。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.

砷化镓晶片生产过程中，产生大量废水，其中主要污染物是悬浮状态的砷化镓微粒。

Tailored specifically for the micro-electronics industry for silicon, gallium arsenide, indium phosphide substrate, such as 6 "8" plate to check the production process; can easily transfer the rapid and accurate inspection of the displacement; also can be applied to other larger specimens need to check the process.

专为微电子行业量身定做，适用于硅、砷化镓、磷化铟等基片6"8"盘的生产工艺检查；可以方便的快移和精确的位移检查；也可以适用其它需较大面积标本的工艺检查。

In our experimental results, we have transferred the GaAs solar cells from GaAs substrates onto the mirror-coated copper substrates with the base layer thickness of 1.5 μm. The photovoltaic performance of the orginal GaAs solar cell on a GaAs substrate was also measured. Under AM1.5G and without anti-reflective coatings conditions, it is found that the Jsc can increase from 12.6 mA/cm2 to 13.82 mA/cm2, while the conversion efficiency can improve from 7.91% to 8.53%. As a result, the enhanced Jsc and η data of the GaAs solar cells can be contributed by the AuGe/Au mirror between the GaAs solar cell and copper substrate.

在实验验证方面，本实验室将砷化镓太阳电池由砷化镓基板转移至铜基板上，在基极厚度1.5 μm、AM 1.5G、以及元件未披覆抗反射膜的条件下，短路电流密度可由12.6 mA/cm2提升至13.82 mA/cm2，增加9.7%，而转换效率则可由7.91%提升为8.53%，这结果显示当砷化镓太阳电池基极底部镀有金属反射层时，的确能适度地提升太阳电池的短路电流密度及转换效率。

The research was focused on application of well-developed metal damascene to copper microfabrication on GaAs and InP substrates and also verification of feasibility.

本研究将使用在矽制程上已相当成熟的金属镶嵌技术运用於砷化镓及磷化铟基材之铜金属化制程中，验证其可行性。

However, this usefulness of GaN for optoelectronic devices seens to be limited by the fact that the defficulty in obtaining p-type material is to grow crystals by admixing GaP to GaN. As will known, GaP with n- or p-type conductivity can be easily obtained by suitable doping. Thus, it might be possible to get n- and p-type GaP_(1-x)N_x or GaAa_(1-xN_x crystals above some critical P content of the alloy system.

把两种或两种以上材料组合起来实现优异性能材料的方法是一种经常使用并行之有效的方法，本论文就是对GaP、GaAs与GaN形成合金系GaP_(1-x)N_x和GaAs_(1-x)N_x进行基础性研究的结果，人们预测这种合金系的禁带宽度应在磷化镓的2.261eV(或砷化镓的1.43eV)到氮化镓的3.39eV之间，如果能制成上述合金系则是很有意义的，它是很有希望的蓝色发光材料。

As our experiments were concerned, the after growth of InGaP, GaAs was grown at a lower temperature than that for InGaP. This made the P atoms on the InGaP surface hard to desorb and greatly reduce the thickness of InGaAsP intermixing layer.

在我们的实验中，成长完磷化铟镓后，以较低的温度成长砷化镓，这将使磷化铟镓表面的磷原子较不易脱附，因此可显著的减少磷砷化铟镓四元混合层的厚度。

GaAs RF switch MMICs for cellular phone; GaAs RF power amplifier MMICs for cellular phone; GaAs RF switch MMICs for base station; GaAs RF attenuator MMICs for base station; RF module for base station; GaAs power amplifier MMICs for CATV; MOSFET power devices;SAW resonators; SAW filters; SAW duplexers; N type and P type 4＂-6＂silicon epitaxial wafers.

这次参展的产品有：用于移动蜂窝电话的砷化镓射频单片集成电路；用于移动通信基站的射频IC及电路模块；用于CATV的砷化镓IC；MOSFET等功率器件；声表面波谐振器；声表面波滤波器；声表面波双工器；4＂-6＂N型和P型各类硅外延片。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。