砷化的

2 The analysis step by 25.0mL sample lixivium, moved in the direction of arsenic in the bottle, plus 10 ml of hydrochloric acid and 10 ml of potassium iodide solution and 5 drop acid stannochlor solution, shake the place 10min, together with 2 g of arsenic-free zinc metal, immediately mounted a good lead acetate paper turns red cotton and mercury bromide from log that arsenic tube placed in the 25-38, f μh of the dark side, remove the test strip and standard mercury bromide a color not deeper than standard.

7.2 分析步骤取25.0mL样品浸泡液，移入测砷瓶中，加5mL盐酸、5mL碘化钾溶液及5滴酸性氯化亚锡溶液，摇匀后放置10min，加2g无砷金属锌，立即将已装好乙酸铅棉花及溴化汞试纸的测砷管装上，放置于25～30℃的暗处1h，取出溴化汞试纸和标准比较，其色斑不得深于标准。

In 2000, T. Dietl utilized theoretical simulation to be contrasted with the experimental, and he found the manganese doped gallium arsenide were identical, and derive other magnetic characteristics in its relevant semiconductor materials.

在2000年T。 Dietl 等人利用理论的模拟计算和实验的对照，发现在砷化镓参杂锰元素的吻合，并推导其他相关的半导体材料在其磁性方面的特性。

Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来，由于无线通信技术的飞速发展，相关领域的集成电路的设计研究也受到越来越多的关注；同时由于工艺技术的不断进步，MOS器件的特征频率也可以达到几个GHz或更高的水平，原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

Results We have got the result by tracing observation to 15 patients of arsenic poisoning:that there are more than 15 years from hyperkeratosis of skin caused by arsenic poisoning to cancer,average 17.5 years.

结果 通过15例砷中毒患者的追踪观察得出：砷中毒病人皮肤角化到癌变的间变期初步认为在15年以上，平均为17.5年，角化部位的外伤不易愈合，且易发生感染，是加速癌变的诱因，并分析了手、足皮肤角化点癌变发生率高的各种因素。

According to domestic and foreign reports, psoriasis patients with concurrent Bowen disease, arsenic keratosis, are in the use of arsenic-containing drugs due to its incidence on the total amount of arsenic and applications.

据国内、外报告，银屑病病人并发的Bowen病、砷角化病，均系使用含砷的药物所致，其发病率与应用砷的总量有关。

To investigate the characteristics of arsenic methylating metabolism in population in coal-burning type arsenism endemic area and in control area, and to explore the difference between the two population.

目的 描述燃煤型砷中毒病区人群与非病区人群砷甲基化代谢的特征，比较两区人群砷甲基化代谢水平的差异。

Methylated trivalent metabolites that are potent cytotoxins, genotoxins and enzyme inhibitors may contribute to the in vivo therapeutic effect of iAs〓.

甲基化的三价砷代谢产物具有更强的细胞毒性，基因毒性和对酶活性的抑制，并可能对As〓O〓在体内的治疗起了一定的作用。

This article introduces the designing principles and characters of laser range finders of pulse-phase type,which is developed by application of GaAs-As semiconductor lasers,and ananlyses the experimental results.

本文介绍了应用砷化镓半导体激光器研制的脉冲相位式激光测距仪的设计原理和特点，并对实验结果进行了科学的分析。

The system is able to automatically test twelve parameters of the three main production targets in the process of flour milling and is able to periodically come up with tehse parameters by means of a Potassium arsenide indicator, a plasma indicator or a printer.

本文介绍了一个用于面粉厂主要生产指标的微机检测系统，该系统能自动检测面粉生产过程中的三项主要指标的十二个参数，定时以砷化钾显示器显示，等离子体显示和打印机三种方式输出，便于分析生产情况，指导生产。

In the second half of the thesis, the basic theory and structure of switch are described. The 60GHz and 77GHz single-pole double-throw switches are designed in shunt configuration with PHEMT on GaAs substrate.

本论文后半部分介绍了开关设计的基本原理及架构，并利用并联型的架构，以PHEMT为电晶体，砷化镓为基板，设计频率工作在60GHz与77GHz的单刀双掷开关。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。