砷化的

Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig.

砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。

For digital applications, the InGaAs channel with high indium concentration is required for better performance and higher transconductance.

在数位应用时，高铟含量的砷化铟镓通道材料是必须的，使元件能具有好的数位特性表现以及较高速的转导特性。

Sub-band high-speed circuits of the past are the use of silicon bipolar and gallium arsenide process design, they have a certain speed on appeal. However, leads the prevalence of large and expensive power shortcomings.

高速的分频电路过去大都采用双极性硅工艺和砷化镓工艺进行设计，它们在速度上有一定的吸引力，但普遍存在功耗较大及价格昂贵的缺点。

For satellite applications, EMCORE offers high-efficiency compound semiconductor-based gallium arsenide solar cells, covered interconnect cells and fully integrated solar panels.

卫星应用， EMCORE提供高效率的化合物半导体的砷化镓太阳能电池，包括互连细胞和完全集成的太阳能电池板。

A two_dimensional photonic cystal with a lattice of elliptic air cylinders, which are filled with the EIT atomic vapor, in the KAs backgroud material is designed.

将一定密度的EIT原子气体充入以砷化钾为背景的椭圆孔柱中，计算表明该三角晶格排列椭圆柱光子晶体的光子带隙随外控制场而变。

White Island, New Zealand, is an active andesitic volcano that is located near the southern end of the Tonga-Kermadec Volcanic Arc at the convergent plate boundary where the Pacific Plate is being subducted beneath the Indian-Australian Plate.

随著微波技术的日趋重要，对主动元件的要求愈来愈高，而砷化镓假形高电子迁移率电晶体在Ⅲ-Ⅴ族半导体中是一个很重要的元件，主要应用在军事和商业通讯的毫米波和微波频上。

The Au/AuGe(88/12)/Au back-contact metal structure was deposited on the GaAs substrate using an electron-beam evaporator. Various post thermal treatments were employed including conventional furnace and rapid thermal annealing. It was found that the outer Au layer thickness and furnace annealing temperature had large effects on the specific contact resistance.

在实验中我们在砷化镓基板背面进行蒸镀背金结构，而此背金结构是由三层金属所组成，分别为金/锗(12%)金(88%)/金，我们控制最外层金的厚度来量测与观察特徵接触电阻的大小，同时改变炉管加热的温度与快速热退火系统做比较，背金结构之元素分布比较可由欧杰电子分析得到，而扫描式电子显微镜可分析其两者之间的表面形貌差异。

The dashes-in-a-well active region consists of 5 stacks of InAs quantum dashes embedded in compressively strained Al0.20Ga0.16In0.64As quantum wells separated by 30-nm undoped tensile-strained Al0.28Ga0.22In0.50As spacers on both sides of the DWELL.

Dashes-in-a-well 作用区域结构包括了五层受压应变的 AlGaInAs 量子井包覆的砷化铟量子段，外围有30奈米受张力应变的 AlGaInAs 层。

The methods for measuring the characteristic impendence and the effective permittivity at the multi discontinuity of transmission line are introduced.

与传统的微带传输线相比较，这些特殊的平面传输线在制作砷化镓单片微波集成电路时有它们的优点。

The measurements clearly pointed the way to optical communication compact gallium-arsenide semiconductor lasers as the source, low-cost cladded glass fibers as the transmission medium, and silicon or germanium semiconductors for detection.

测试结果清楚地指出了光通信的道路--就是以紧凑的砷化镓半导体激光器为光源，廉价的包层光纤为传输媒质，硅或锗半导体为探测器。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。