砷化的

A gray mineral consisting of cobalt arsenide and nickel; an important source of cobalt and nickel.

一种灰色矿物，由砷化钴和镍组成，是钴和镍的重要来源。

The semiconductor sensing element is fabricated from a suitable semiconductor material such as galium arsenide.

半导体传感单元是编造一个合适的半导体材料，如砷化殃。

Many sulphides, selenides, and telluides have the nickel arsenide, NiAs, type of structure.

许多硫化物、硒化物和碲化物具有砷化？？iAs型的结构。

Many sulphides, selenides, and telluides have the nickel arsenide, N iAs , type of structure.

许多硫化物、硒化物和碲化物具有砷化？？ ias 型的结构。

The phosphine and arsine absorb the ultraviolet light much more strongly than does silane, causing them to be deposited out on the walls of the container.

磷化氢和砷化三氢对紫外光的吸收比硅烷强烈得多，因此，它们就沉积在容器的器壁上。

Tailored specifically for the micro-electronics industry for silicon, gallium arsenide, indium phosphide substrate, such as 6 "8" plate to check the production process; can easily transfer the rapid and accurate inspection of the displacement; also can be applied to other larger specimens need to check the process.

专为微电子行业量身定做，适用于硅、砷化镓、磷化铟等基片6"8"盘的生产工艺检查；可以方便的快移和精确的位移检查；也可以适用其它需较大面积标本的工艺检查。

Phosphine(PH3)is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping,ion implement and chemical vapor deposition etc.

磷化氢在电子工业中主要用作外延硅半导体的一种n型掺杂剂，在化学气相沉积和离子注入中被用作一种磷源，在发光二极管用磷砷化镓膜的生产中也占有重要地位。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂，使得电子在元件通道层中的分布更为均匀及对称，以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线，改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

However, this usefulness of GaN for optoelectronic devices seens to be limited by the fact that the defficulty in obtaining p-type material is to grow crystals by admixing GaP to GaN. As will known, GaP with n- or p-type conductivity can be easily obtained by suitable doping. Thus, it might be possible to get n- and p-type GaP_(1-x)N_x or GaAa_(1-xN_x crystals above some critical P content of the alloy system.

把两种或两种以上材料组合起来实现优异性能材料的方法是一种经常使用并行之有效的方法，本论文就是对GaP、GaAs与GaN形成合金系GaP_(1-x)N_x和GaAs_(1-x)N_x进行基础性研究的结果，人们预测这种合金系的禁带宽度应在磷化镓的2.261eV(或砷化镓的1.43eV)到氮化镓的3.39eV之间，如果能制成上述合金系则是很有意义的，它是很有希望的蓝色发光材料。

The Soft-Hard Acid-Base Theory was used to interpret the experimental results for the first time, the softness of sulfur, which was a Lewis base, was changed by solvents, and the reactivity of sulfur atom was changed.

结果表明，砷化镓表面硫化层厚度与所用溶液的极性有关，用极性小的有机醇作溶剂可以得到更厚的硫钝化层。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。