砷

The dashes-in-a-well active region consists of 5 stacks of InAs quantum dashes embedded in compressively strained Al0.20Ga0.16In0.64As quantum wells separated by 30-nm undoped tensile-strained Al0.28Ga0.22In0.50As spacers on both sides of the DWELL.

Dashes-in-a-well 作用区域结构包括了五层受压应变的 AlGaInAs 量子井包覆的砷化铟量子段，外围有30奈米受张力应变的 AlGaInAs 层。

The research was focused on application of well-developed metal damascene to copper microfabrication on GaAs and InP substrates and also verification of feasibility.

本研究将使用在矽制程上已相当成熟的金属镶嵌技术运用於砷化镓及磷化铟基材之铜金属化制程中，验证其可行性。

Our references include the rebuilding of complete water works during operation as well as installations for deacidification, arsenic removal, and UV-irradiation.

我们的同类项目业绩包括运营中的水厂改造重建、脱氧装置、除砷装置和紫外线辐照装置的安装。

In the batch incubation with addition of Asadsorbing ferrihydrite, the presence of arsenicresistant denitrificator caused an increase in concentrations of Fe and Mn, a decrease in concentrations of NO-3 and As, and a high ratio of As to the total As.

在吸附有砷的水铁矿体系中，反硝化菌所产生的反硝化作用可导致溶液中NO-3含量的降低、Fe含量的升高、As含量降低，且As所占比例增加。

Anaerobic activated sludge was used to cultivate arsenicresistant denitrificator in laboratory.

采集缺氧活性污泥进行室内微生物驯化，培养耐砷反硝化菌。

X9313U-WS Pinout: The coupler consists of a AlGaAs LED that is optically cou- pled to a dielectrically isolated photodiode array which drives two series connected high voltage MOS transistors.

X9313U-WS引脚说明：该耦合器由一个砷化铝镓发光二极管是光凑发光二极体为介质隔离光电二极管阵列的驱动两个串联的高压MOS晶体管。

The most common materials are amorphous silicon (a-Si, still silicon, but in a different form), or the polycrystalline materials : cadmium telluride and copper indium diselenide.

最常用的材料是非晶硅(a-si，依然是硅，但是不同的形式)或者是多晶硅，镝化镉，铜铟砷CIS，CIGS

As two important metals in the catalogue of endocrine disruptor chemicals, the pollution of mercuric and arsenic compounds in aquatic samples are of great concerned.

作为环境内分泌干扰物&黑名单&中的两种重要的金属物质，汞、砷在环境水体中的污染一直是人们关注的热点。

Dissimilatory arsenate-respiring prokaryotes can reduce As to As,chemoautotrophic arsenite oxidizers and heterotrophic arsenite oxidizers can oxidize As to As.

砷是一种有毒元素，其毒性早在2000多年前就被人们所认识和利用。

On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type

对硅衬底上的一个epitomical层了，而IC零件形成subsequently.in一个CVD法（化学气相depsition ）过程中，硅衬底的地方在真空晶体管均先加热至1600 ° C时，由高频率的无线电功率，并然后h ⒉氯⒉硅和某些气态的化合物，砷或P ，是注入试管，使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构，以供应电子传递的&负面&目前，在硅晶体，即所谓N型silicon.b ，可以增加一条，作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底，是需要靠哪些类型的晶体管预计将在制造上它： NPN型的PNP型

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。